CN103390622A - Layered solar battery structure - Google Patents
Layered solar battery structure Download PDFInfo
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- CN103390622A CN103390622A CN2012101537293A CN201210153729A CN103390622A CN 103390622 A CN103390622 A CN 103390622A CN 2012101537293 A CN2012101537293 A CN 2012101537293A CN 201210153729 A CN201210153729 A CN 201210153729A CN 103390622 A CN103390622 A CN 103390622A
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A layered solar battery structure comprises a substrate, a bottom layer solar battery pack, a conductive interface layer, a top layer solar battery. The bottom layer solar battery pack comprises multiple solar battery units and is arranged on the substrate, and the conductive interface layer is arranged between the top layer solar battery and the bottom layer solar battery pack. The multiple solar battery units form a series connection structure and meanwhile form a series connection structure with the top layer solar battery. The top layer solar battery has a high energy gap value, and the bottom layer solar battery pack has a low energy gap value, so that sunlight with wide energy distribution can be absorbed. The series connection structure of a circuit formed by the multiple solar battery units of the bottom layer solar battery pack and the top layer solar battery can enable the incompatibility of the top layer solar battery and bottom layer solar battery interface current to be reduced, meanwhile the series connection structure formed by the multiple solar battery units enables open-circuit voltage (Voc) of the whole layered solar battery structure to be improved, and further the photoelectric conversion efficiency of batteries is improved.
Description
Technical field
A kind of solar battery structure, refer to a kind of cascade type solar battery structure that reduces top layer solar cell and bottom solar battery group electric current mismatch and increase open circuit voltage especially.
Background technology
Along with the energy starved phenomenon is day by day serious, the demand of new energy development is also increased the weight of day by day.From sunlight surface emitting energy out, pass atmosphere to earth surface, 1.8x10 is approximately arranged
14KW, this energy value are approximately 100,000 times of the average electric power in the whole world., if therefore can effectively utilize solar energy, will have very greatly and benefit solution energy shortage problem.Solar cell is a kind of energy conversion component.Its objective is solar energy is converted to electric energy.The solar cell power generation principle is to utilize light volta effect (Photovoltaic Effect).Basic solar battery element structure is to be formed by a p-type and N-shaped semiconductor combinations.When solar irradiation was mapped to element, energy can be absorbed greater than the sunlight of semiconductor energy gap, and made semiconductor element produce electron hole pair, namely formed electric current after connection.
Solar radiation spectrum, the main distribution of the wavelength infrared light from the ultraviolet light of 0.3 micron to several microns.Be converted into photon energy, scope is approximately from 0.4 electron-volt (Electronic Volt, eV) to 4 electron-volts.Therefore solar energy is that a wide area distributes.Usually the solar battery structure material is silica-based material.The silicon materials energy gap is about 1.1 electron-volts at normal temperatures.Therefore the solar cell that utilizes the single junction of silicon materials (Single Junction) structure to make, only can absorb energy higher than the sunlight of 1.1 electron-volts.Other energy can't be absorbed lower than the sunlight of 1.1 electron-volts, so will cause the too low problem of photoelectric conversion efficiency.For head it off, the structure of stack solar cell is suggested.Its basic conception is that the semiconductor element with different energy gaps is stacked, and so can utilize the semiconductor element of two kinds of different energy gaps to absorb respectively the sunlight of different-energy to promote photoelectric conversion efficiency.Although can increase in this way the bandwidth of energy absorption, but because the semiconductor element that is the different energy gaps of two kinds of tools is superimposed together, the current density difference that top layer solar cell and bottom solar cell produce separately is excessive, this electric current mismatch will cause whole element photoelectric conversion efficiency to lower, and therefore how reducing the electric current mismatch is an important subject under discussion.
Summary of the invention
The object of the invention is to provide a kind of cascade type solar battery structure that reduces the electric current mismatch and then improve photoelectric conversion efficiency.Sunlight is by after having the top layer solar cell incident that higher edge energy material forms, can first absorb the sunlight of shorter wavelength, after the sunlight of all the other longer wavelengths passes and has the conduction interface layer of wearing the tunnel effect, absorbed by having the bottom solar battery group that low edge energy material forms, so can be absorbed the sunlight of a wide area energy.And because bottom solar battery group of the present invention is comprised of a plurality of solar battery cells of being cut apart by single solar cell structure cell, along with size of current and contact area size are inversely proportional to, the electric current that the top layer solar cell produces can compensate by a plurality of small size solar battery cells that form of cutting apart by the mismatch that the bottom solar battery group with different energy gaps produces, and so can reduce the electric current mismatch and promotes photoelectric conversion efficiency.Because a plurality of solar battery cells are to be cut apart and formed by single solar cell structure cell, cascade type solar battery structure of the present invention also has advantages of the manufacturing cost of saving and increases production efficiency.
For reaching the object of the invention, an execution mode of an aspect of of the present present invention is that a kind of cascade type solar battery structure is being provided.Be provided with bottom solar battery group and top layer solar cell on one substrate.Has a conduction interface layer between top layer solar cell and bottom solar battery group.The bottom solar battery group comprises a plurality of solar battery cells, and a plurality of solar battery cell forms cascaded structure to each other.The top layer solar cell is only connected with a bottom solar battery group solar battery cell wherein.The solar battery cell of bottom solar battery group has low edge energy, and the top layer solar cell has the edge energy higher with respect to the solar battery cell of bottom solar battery group.
One execution mode of another aspect of the present invention, be that a kind of cascade type method for manufacturing solar battery is being provided, and is applied to cascade type solar battery structure of the present invention.The solar battery cell of bottom solar battery group is cut apart and is formed and form series connection mutually to each other by single solar cell structure cell, and wherein a plurality of solar battery cells have a gap to each other.Having a conduction interface layer and top layer solar cell between top layer solar cell and bottom solar battery group connects with the solar battery cell formation wherein of bottom solar battery group.
One execution mode of an aspect of of the present present invention, substrate can be transparency carrier or bendable substrate.Another substrate material can be glass, metal or organic material.
One execution mode of an aspect of of the present present invention, the solar battery cell method that forms the bottom solar battery group can be laser cutting, chemical etching or reactive ion etch.
One execution mode of an aspect of of the present present invention, the solar battery cell of bottom solar battery group can be made by III-V group iii v compound semiconductor material, II-VI group iii v compound semiconductor material, organic semiconducting materials, nano material, Copper Indium Gallium Selenide silicate material or cadmium telluride material.
One execution mode of an aspect of of the present present invention, conduction interface layer can be by conductive, transparent oxide materials or thin and the light-permeable metal material is made, and this conduction interface layer is for wearing tunnel junction layer.
One execution mode of an aspect of of the present present invention, top layer solar cell can be by the compound-material take amorphous silicon (a-Si) as base material and copper gallium selenium (CGS) as the compound-material of base material or with amorphous silicon/microcrystal silicon (a-Si/ μ c-SiC) many junctions (multi-junction) structure, make.
One execution mode of an aspect of of the present present invention, the cascaded structure that the bottom solar battery cell forms is cascaded structure on circuit, its formation method can coordinate the electrically-conductive backing plate connection to form by a plurality of solar battery cells maybe can be by first depositing a megohmite insulant in a plurality of solar battery cells gap to each other, cut and wear megohmite insulant and form a packing space, then insert conductive materials and form in packing space.
One execution mode of an aspect of of the present present invention, can repeat to extend most cascade type solar cells of series connection and form a large-area solar module, wherein series connection method forms for the positive electrode of the negative electrode of the solar battery cell of the bottom solar battery group of a cascade type solar cell that will be wherein and a time cascade type solar cell links.
In sum, cascade type solar battery structure of the present invention, can utilize top layer solar cell and bottom solar battery group to have the principle of different energy gap, the absorption frequency range of increase to sunlight, and a plurality of solar battery cells of bottom are series connection mutually to each other, and with the top layer solar cell, forms simultaneously cascaded structure on circuit.The relation of utilizing size of current and contact area size to be inversely proportional to, available buffer top layer solar cell and the unmatched problem of bottom solar battery group electric current, simultaneously because the series connection mutually to each other of a plurality of solar battery cells of bottom, the open voltage of cascade type solar battery structure of the present invention is greatly increased than known laminate type solar cell person, and then promote photoelectric conversion efficiency.
Description of drawings
Fig. 1 is the simplest execution mode schematic diagram of an aspect of of the present present invention;
Fig. 2 A is the first stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 B is the second stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 C is the phase III processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 D is the fourth stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 E is the five-stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 F is the 6th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 G is the 7th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 H is the 8th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 2 I is the 9th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention;
Fig. 3 is cascade type solar battery structure application mode schematic diagram;
Fig. 4 is cascade type solar cell structure-improved schematic diagram.
[main element symbol description]
Embodiment
Describe technological core of the present invention for knowing, the present embodiment content is first chatted the bright the simplest execution mode of the present invention, then is aided with specific embodiment detailed description detailed execution mode of the present invention.
Please first with reference to Fig. 1, Fig. 1 is the simplest execution mode schematic diagram of an aspect of of the present present invention.One cascade type solar battery structure 110 comprises a substrate 111, a bottom solar battery group 112, conduction interface layer 113 and a top layer solar cell 114.Bottom solar battery group 112 is arranged on substrate 111.Bottom solar battery group 112 is comprised of solar battery cell 115 and 116.Solar battery cell 115 and solar battery cell 116 are cut apart and formed by single solar cell structure cell (unnumbered).One conduction interface layer 113 is arranged at 115 of top layer solar cell 114 and solar battery cells.Top layer solar cell 114 forms cascaded structure on circuit with solar battery cell 115 and the solar battery cell 116 of bottom solar battery group 112.Top layer solar cell 114 has higher edge energy, and the solar battery cell 115 of bottom solar battery group 112 and solar battery cell 116 have low edge energy.Sunlight is by the 114 top incidents of top layer solar cell, and short wavelength's part is absorbed by top layer solar cell 114, long wavelength's partial penetration top layer solar cell 114 and be 112 absorptions of bottom solar battery group.and because bottom solar battery group 112 is to connect and touch less solar battery cell 115 and the solar battery cell 116 of area and be composed in series by two, the relation that is inversely proportional to along with size of current and contact area size, the magnitude of current that bottom solar battery group 112 produces and the otherness of top layer solar cell 114 reduce, the short circuit current of cascade type solar battery structure is reduced the impact of top layer solar cell than small short-circuit current, the open voltage (Vo) of cascade type solar battery structure but increases because of the bottom solar battery group of series connection simultaneously, the photoelectric conversion efficiency of whole cascade type solar structure is greatly promoted.
, for more chatting bright embodiment of the present invention, be the cascade type solar battery structure of Copper Indium Gallium Selenide (CIGS) p-n junction solar cell of the low edge energy of tool and manufacture method explanation thereof especially exemplified by the top layer solar cell battery unit that is amorphous silica-based (a-Si) the p-i-n type solar cell of the higher edge energy of tool and bottom solar battery group.
Please refer to Fig. 2 A, Fig. 2 A is the first stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.One molybdenum (Mo) conductive metal layer 212 is deposited on substrate 211 to treat as electrode layer dorsad.Then p-type Copper Indium Gallium Selenide hydrochlorate (CIGS) layer 213 is deposited on molybdenum conductive metal layer 212.Then, deposit N-shaped cadmium sulfide (CdS) layer 214 to form the p-n contact structure on p-type Copper Indium Gallium Selenide hydrochlorate (CIGS) layer 213.
Please continue the B with reference to Fig. 2, Fig. 2 B is the second stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.Be applied in laser cutting method on the structure of Fig. 2 A formation.Cut and wear cadmium sulfide (CdS) layer and Copper Indium Gallium Selenide hydrochlorate (CIGS) layer and form the groove that width is W1 at position P1.
Please continue the C with reference to Fig. 2, Fig. 2 C is the phase III processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.Be applied in laser cutting method on the structure of Fig. 2 B formation.Cut and wear the molybdenum conductive layer and form the groove that width is W2 at position P2.
Please continue the D with reference to Fig. 2, Fig. 2 D is the fourth stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.Deposition one deck protoplasm (Intrinsic) and have the first zinc oxide (ZnO) layer 215 of high impedance on Fig. 2 C-structure.
Please continue the E with reference to Fig. 2, Fig. 2 E is the five-stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.Be applied in laser cutting method on the structure of Fig. 2 D formation.Cut and wear the first zinc oxide (ZnO) layer 215 and form the groove that width is W3 at position P3.
Please continue the F with reference to Fig. 2, Fig. 2 F is the 6th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.The first adulterated al zinc oxide (ZnO:Al) layer 216 of the high conduction of deposition layer of transparent on the structure of Fig. 2 E.
Please continue the G with reference to Fig. 2, Fig. 2 G is the 7th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.First in the first adulterated al zinc oxide film 216 tops of right side structure cell (unnumbered), cover the removable temporary transient mask layers 220 of one deck, and with laser cutting method, at position P4, cut and wear part the first adulterated al zinc oxide film 216, and form one and widely be the zone of W4.Deposit simultaneously the second adulterated al zinc oxide (ZnO:Al) layer 217 of the high conduction of layer of transparent in the first adulterated al zinc oxide film 216 tops of left side structure cell (unnumbered).
Please continue the H with reference to Fig. 2, Fig. 2 H is the 8th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.First in the second adulterated al zinc oxide (ZnO:Al) layer 217 top of left side structure cell (unnumbered), cover the removable temporary transient mask layer 230 of one deck, then deposit one deck the second zinc oxide film 218.
Please continue the I with reference to Fig. 2, Fig. 2 I is the 8th stage processing procedure schematic diagram according to an execution mode of an aspect of of the present present invention.Form on structure at Fig. 2 H, deposition one amorphous silica-based (a-Si) p-i-n type solar cell solar battery structure 219, so far form a cascade type solar battery structure 210.
Please continue with reference to Fig. 3, Fig. 3 is cascade type solar battery structure application mode schematic diagram.Adulterated al zinc oxide (ZnO:Al) layer 312 of the high conduction of deposition layer of transparent on amorphous silica-based (a-Si) the p-i-n type solar cell solar battery structure 219 that Fig. 2 I forms, and then deposition one deck photic zone 313 is on adulterated al zinc oxide (ZnO:Al) layer 312.After sunlight is penetrated by photic zone 313, through Copper Indium Gallium Selenide (CIGS) the p-n junction solar cell (unnumbered) of the amorphous of higher edge energy silica-based (a-Si) p-i-n type solar cell 219 with the low edge energy that is formed by p-type Copper Indium Gallium Selenide hydrochlorate (CIGS) layer 213 and N-shaped cadmium sulfide (CdS) layer 214.The current direction that light volta effect (Photovoltaic Effect) produces is as shown in interior current path 410.During practical application, external device 500 can be connected to the electrode two ends adulterated al zinc oxide (ZnO:Al) layer 312 of molybdenum (Mo) conductive metal layer 212 and transparent high conductive, and this moment, current direction was shown in extrinsic current path 420.
Please continue with reference to Fig. 4, Fig. 4 is cascade type solar cell structure-improved schematic diagram.On the cascade type solar battery structure 210 that forms as Fig. 2 I, can, at adulterated al zinc oxide (ZnO:Al) layer 311 of the second adulterated al zinc oxide (ZnO:Al) layer 217 and 219 high conductions of deposition layer of transparent of amorphous silica-based (a-Si) p-i-n type solar cell solar battery structure, by this adulterated al zinc oxide (ZnO:Al) layer 311, can reduce the extraneoas loss that causes by heterojunction because of electric current.
In addition, one embodiment of the present invention, stacked in series type solar battery structure, form a solar energy in large area battery module more again.its method is the cascade type solar battery cell that first top layer solar cell a plurality of bottom solar battery cells of series connection, consists of, then successively, first be coated with bottom electrode on the large-area substrates that chooses, then be cut to area and the quantity of required stacked solar cell unit, plate again the structure that does not comprise stacked solar cell cell transparent electrode, and then the electrode of substrate line of cut other will be cut to above electrode of substrate till, just transparent electrode layer is plated finally, and last line of cut other will be cut to above electrode of substrate till, negative electrode and the rear one adjacent stacked solar cell unit positive electrode of last stacked solar cell unit are linked, formation one can be selected the large-area solar module of voltage and power.
by the invention described above execution mode as can be known, cascade type solar battery structure of the present invention, its characteristics are to utilize the top layer solar cell to form and connect with a plurality of battery units of bottom solar battery group, and the principle that is inversely proportional to by size of current and contact area, can improve known laminate type solar battery structure top layer solar cell and the unmatched shortcoming of bottom solar cell electric current, and increase the open voltage (Vo) of cascade type solar battery structure because of the bottom solar battery group of series connection, and then obtain the photoelectric conversion efficiency higher than known solar cells.More can connect again cascade type solar battery structure of the present invention in addition and obtain a solar energy in large area battery module and think practical application request.
Although the present invention discloses as above with execution mode; so it is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (27)
1. a cascade type solar battery structure, is characterized in that, it comprises:
One substrate;
One bottom solar battery group, be arranged on this substrate, and it comprises:
A plurality of solar battery cells, wherein these a plurality of solar battery cells are connected each other, and these a plurality of solar battery cells have low edge energy;
One conduction interface layer, be arranged on this bottom solar battery group; And
One top layer solar cell, be arranged on this conduction interface layer, wherein this top layer solar cell is only connected with this bottom solar battery group solar battery cell wherein, and this top layer solar cell has the edge energy higher with respect to these a plurality of solar battery cells.
2. cascade type solar battery structure according to claim 1, is characterized in that, this bottom solar battery group is covered by this top layer solar cell.
3. cascade type solar battery structure according to claim 1, is characterized in that, this substrate is a transparency carrier.
4. cascade type solar battery structure according to claim 3, is characterized in that, this transparency carrier material is glass.
5. cascade type solar battery structure according to claim 1, is characterized in that, this substrate material is metal.
6. cascade type solar battery structure according to claim 1, is characterized in that, this substrate material is organic material.
7. cascade type solar battery structure according to claim 1, is characterized in that, this substrate is bendable substrate.
8. cascade type solar battery structure according to claim 1, is characterized in that, the solar battery cell method that forms this bottom solar battery group can be laser cutting.
9. cascade type solar battery structure according to claim 1, is characterized in that, the solar battery cell method that forms this bottom solar battery group can be chemical etching.
10. cascade type solar battery structure according to claim 1, is characterized in that, the solar battery cell method that forms this bottom solar battery group can be reactive ion etch.
11. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by the III-V group iii v compound semiconductor material.
12. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by the II-VI group iii v compound semiconductor material.
13. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by organic semiconducting materials.
14. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by nano material.
15. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by the Copper Indium Gallium Selenide silicate material.
16. cascade type solar battery structure according to claim 1 is characterized in that the solar battery cell of this bottom solar battery group is made by the cadmium telluride material.
17. cascade type solar battery structure according to claim 1, is characterized in that, this conduction interface layer is made by the conductive, transparent oxide material.
18. cascade type solar battery structure according to claim 1, is characterized in that, this conduction interface layer is by thin and metal material light-permeable is made.
19. cascade type solar battery structure according to claim 1, is characterized in that, this conduction interface layer is to wear tunnel junction layer.
20. cascade type solar battery structure according to claim 1, is characterized in that, this top layer solar cell is made by the compound-material take amorphous silicon as base material.
21. cascade type solar battery structure according to claim 1, is characterized in that, this top layer solar cell is by take copper gallium selenium as the compound-material of base material, making.
22. cascade type solar battery structure according to claim 1, is characterized in that, this top layer solar cell is made by the many contact structures of amorphous silicon/microcrystal silicon.
23. a cascade type method for manufacturing solar battery, is characterized in that, is applied to cascade type solar battery structure claimed in claim 1, it comprises:
Form a solar cell structure cell;
This solar cell structure cell is cut apart and formed a plurality of solar battery cells, and wherein these a plurality of solar battery cells have a gap to each other;
Between should a plurality of solar battery cells mutually series connection form a bottom solar battery group; And
Form a top layer solar cell, this top layer solar cell is connected with this bottom solar battery group solar battery cell wherein.
24. cascade type method for manufacturing solar battery according to claim 23, is characterized in that, this series connection is the series connection on circuit.
25. cascade type method for manufacturing solar battery according to claim 23, is characterized in that, the series connection method of a plurality of solar battery cells of this bottom solar battery group can coordinate the electrically-conductive backing plate connection to form by these a plurality of solar battery cells.
26. cascade type method for manufacturing solar battery according to claim 23, it is characterized in that, the series connection method of a plurality of solar battery cells of this bottom solar battery group can be by first depositing a megohmite insulant in this a plurality of solar battery cells gap to each other respectively, cut this megohmite insulant and form a packing space, then insert conductive materials and form in this packing space.
27. cascade type method for manufacturing solar battery according to claim 23, it is characterized in that, can repeat to extend most these cascade type solar cells of series connection and form a large-area solar module, wherein this series connection method forms for the positive electrode of the negative electrode of the solar battery cell of the bottom solar battery group of a cascade type solar cell that will be wherein and a time cascade type solar cell links.
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| CN2012101537293A CN103390622A (en) | 2012-05-11 | 2012-05-11 | Layered solar battery structure |
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| CN2012101537293A CN103390622A (en) | 2012-05-11 | 2012-05-11 | Layered solar battery structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091709A (en) * | 2017-12-20 | 2018-05-29 | 张汉钰 | A kind of silicon zinc multidimensional photovoltaic material and preparation method thereof |
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| CN1272225A (en) * | 1998-03-19 | 2000-11-01 | 丰田自动车株式会社 | Solar battery |
| CN101366125A (en) * | 2006-04-12 | 2009-02-11 | Lg电子株式会社 | Thin-film solar cell and fabrication method thereof |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
| CN102148266A (en) * | 2010-02-09 | 2011-08-10 | 晶元光电股份有限公司 | Multi-junction solar cell |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272225A (en) * | 1998-03-19 | 2000-11-01 | 丰田自动车株式会社 | Solar battery |
| CN101366125A (en) * | 2006-04-12 | 2009-02-11 | Lg电子株式会社 | Thin-film solar cell and fabrication method thereof |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
| CN102148266A (en) * | 2010-02-09 | 2011-08-10 | 晶元光电股份有限公司 | Multi-junction solar cell |
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| CN108091709A (en) * | 2017-12-20 | 2018-05-29 | 张汉钰 | A kind of silicon zinc multidimensional photovoltaic material and preparation method thereof |
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Application publication date: 20131113 |