CN102148266A - Multi-junction solar cell - Google Patents
Multi-junction solar cell Download PDFInfo
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- CN102148266A CN102148266A CN2010101170143A CN201010117014A CN102148266A CN 102148266 A CN102148266 A CN 102148266A CN 2010101170143 A CN2010101170143 A CN 2010101170143A CN 201010117014 A CN201010117014 A CN 201010117014A CN 102148266 A CN102148266 A CN 102148266A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a multi-junction solar cell and a manufacturing method thereof. The manufacturing method comprises the following step of: forming a first photovoltaic junction structure and a second photovoltaic junction structure in sequence, wherein at least one of the first photovoltaic junction structure and the second photovoltaic junction structure comprises a discontinuous photoelectric conversion structure.
Description
Technical field
The present invention is about a multi-junction solar cells structure and a manufacture method thereof.
Background technology
Limited in response to crude resources, various alternative energy source has been widely studied and commercialization, wherein no matter solar cell is in industry and people's livelihood purposes, all reached the degree of commodity production, III-V family connects surface layer solar cell (multi-junction solar cell) more and is mainly used in space or industrial electric power purposes because of it has high conversion efficiency, its chip architecture for example comprises that three of germanium/GaAs/InGaP (Ge/GaAs/GaInP) series that lattice matches each other connects the face stacked structure, and its superiors are to have the GaxInl-xP (1.85eV of big energy gap; X～0.5) be upper cell (Top cell), can absorb the photon with higher-energy, promptly ultraviolet light is to the wavelength of visible-range; The energy gap 1.42eV of GaAs is intermediate cell (Middlecell), absorbs the wavelength of near infrared range; Germanium has lower energy gap 0.74eV, is bottom battery (Bottom cell), absorbs the wavelength by the infrared light scope of the first two laminated cell.Because absorbable solar radiation spectral region is wider, conversion efficiency is about more than 30%.
Summary of the invention
The present invention proposes multi-junction solar cells (multi-junction solar cell) structure and the manufacture method thereof of a novelty, has the heat dissipation characteristics that high efficiency also can be improved element.
One aspect of the present invention proposes the manufacture method of a multi-junction solar cells, comprise a growth substrate is provided, grow a resilient coating on described growth substrate, grow a contact layer on described resilient coating, grow one first photovoltaic contact structure on described contact layer, grow one first tunnelling contact structure on the described first photovoltaic contact structure, grow one second photovoltaic contact structure on the described first tunnelling contact structure, form a photon recovery layer on the described second photovoltaic contact structure, one supporter is provided, and form a knitting layer on described supporter, utilize described knitting layer to engage described photon recovery layer and supporter, remove described growth substrate, make to expose described contact layer, remove the described contact layer of part and make the described first photovoltaic contact structure of an exposed part, form one first electrode on described contact layer and form one second electrode and electrically connect described supporter, and form an anti-reflecting layer on the exposed at least surface of the described first photovoltaic contact structure; Wherein, at least the first photovoltaic contact structure and the second photovoltaic contact structure one of them comprises a discontinuous opto-electronic conversion structure at least.In one embodiment of this invention, described discontinuous opto-electronic conversion structure is positioned at the defined a plurality of cavity of a patterned structures layer.In another embodiment of the present invention, described discontinuous opto-electronic conversion structure is that a quantum dot layer comprises a plurality of quantum dots.
The present invention proposes a multi-junction solar cells structure on the other hand, comprise a supporter, one knitting layer is positioned on the surface of described supporter, one first electrode is positioned on another surface of described supporter, one photon recovery layer is positioned on the described knitting layer, the one first photovoltaic contact structure with first energy gap is positioned on another part surface of described photon recovery layer, one first tunnelling contact structure is positioned on the described first photovoltaic contact structure, the one second photovoltaic contact structure with second energy gap is positioned on the described first tunnelling contact structure, one contact layer is positioned on a part of surface of the described second photovoltaic contact structure, and forms ohmic contact with the described second photovoltaic contact structure, one second electrode is positioned on the described contact layer, and one anti-reflecting layer be positioned on the surface of another part at least of the described second photovoltaic contact structure; Wherein, at least the first photovoltaic contact structure and the second photovoltaic contact structure one of them comprises a discontinuous opto-electronic conversion structure at least.In one embodiment of this invention, described discontinuous opto-electronic conversion structure is positioned at the defined a plurality of cavity of a patterned structures layer.In another embodiment of the present invention, described discontinuous opto-electronic conversion structure is that a quantum dot layer comprises a plurality of quantum dots.
Description of drawings
Fig. 1～Fig. 3 shows manufacture method and the structure thereof according to first embodiment of multi-junction solar cells of the present invention;
Fig. 4 shows the patterned structures layer according to the first embodiment of the present invention;
Fig. 5～Fig. 7 shows manufacture method and the structure thereof according to second embodiment of multi-junction solar cells of the present invention;
Fig. 8 shows the energy gap schematic diagram according to the quantum dot layer of second embodiment of the present invention;
Fig. 9 shows the 3rd embodiment according to multi-junction solar cells structure of the present invention.
The main element symbol description
1,2,3: multi-junction solar cells;
10: growth substrate;
11: resilient coating;
12: contact layer;
21: the first photovoltaic contact structures;
211: the first emitter layers;
212: the first base layers;
22: the first tunnelling contact structures;
221: the first tunnel layers;
222: the second tunnel layers;
31: the second photovoltaic contact structures;
311: the second emitter layers;
312: the second base layers;
32: the second tunnelling contact structures;
321: the three tunnel layers;
322: the four tunnel layers;
40: the patterned structures layer;
41,90: the three photovoltaic contact structures;
411,91: the three emitter layers;
412,93: the three base layers;
51: the photon recovery layer;
60: supporter;
61: knitting layer;
71: the first electrodes;
72: the second electrodes;
81: anti-reflecting layer;
92: quantum dot region;
921: cover layer;
922: quantum well layer;
923: quantum dot layer.
Embodiment
Manufacture method and the structure thereof of first embodiment of the open multi-junction solar cells of the present invention of Fig. 1～Fig. 3, the detailed step of its manufacture method discloses as follows:
Step 1: as shown in Figure 1, one growth substrate 10 at first is provided, its material comprises germanium (Ge), sige alloy (SiGe) or GaAs (GaAs), and grow a resilient coating 11 on growth substrate 10, wherein resilient coating 11 for example is GaAs (GaAs) or InGaP (InGaP) for the different material of growth substrate 10 and have the lattice constant that is complementary with growth substrate;
Step 2: form a contact layer 12 on resilient coating 11, contact layer 12 comprises semi-conducting material, is GaAs for example, and has a high impurity concentration, for example is the impurity concentration greater than 1*1018cm-3;
Step 3: grow one first photovoltaic contact structure 21 on contact layer 12, wherein, form a low-resistance ohmic contact between the first photovoltaic contact structure 21 and the contact layer 12; Wherein the first photovoltaic contact structure 21 has one first energy gap, comprise that one first emitter layer (emitter 1ayer) 211 has the first electrical kenel, for example, n type and one first base layer (base layer) 212 be different from the first second electrical electrical kenel for having, it for example is the p type, wherein first emitter layer 211 and first base layer 212 have the lattice constant that is complementary with growth substrate 10, and its material for example comprises AlGaInP (AlaInbGa (1-a-b) P; 0 a, b 1);
Step 4: growing one first tunnelling contact structure 22 on the first photovoltaic contact structure 21, comprise that first tunnel layer 221 has the first electrical kenel, for example is the p type, and one is higher than 1 * 10
18Cm
-3Impurity concentration and one second tunnel layer 222 have the second electrical kenel and be different from the first electrical kenel, for example be the n type, and one is higher than 1 * 10
18Cm
-3Impurity concentration, wherein first tunnel layer 221 and second tunnel layer 222 have high impurity concentration and low thickness, for example be less than 500 dusts, to form a high contact structure that conducts electricity;
Step 5: grow one second photovoltaic contact structure 31 on the first tunnelling contact structure 22, wherein the second photovoltaic contact structure 31 has one second energy gap less than described first energy gap, comprise that one second emitter layer (emitter layer) 311 has the first electrical kenel, for example, n type and one second base layer (base layer) 312 be different from the first second electrical electrical kenel for having, it for example is the p type, wherein second emitter layer 311 and second base layer 312 have the lattice constant that is complementary with growth substrate 10, and its material for example comprises GaAs (GaAs);
Step 6: growing one second tunnelling contact structure 32 on the second photovoltaic contact structure 31, comprise that the 3rd tunnel layer 321 has the first electrical kenel, for example is the p type, and one is higher than 1 * 10
18Cm
-3Impurity concentration and one the 4th tunnel layer 322 have the second electrical kenel and be different from the first electrical kenel, for example be the n type, and one is higher than 1 * 10
18Cm
-3Impurity concentration, wherein the 3rd tunnel layer 321 and the 4th tunnel layer 322 have high impurity concentration and low thickness, for example be less than 500 dusts, to form a high contact structure that conducts electricity;
Step 7: form a patterned structures layer 40 on the second tunnelling contact structure 32, patterned structures layer 40 has a pattern defining and goes out a plurality of cavitys, and exposes the part surface of the second tunnelling contact structure 32 in the corresponding cavity area;
Step 8: grow one the 3rd photovoltaic contact structure 41 in described a plurality of cavitys, and defined a plurality of discontinuous photovoltaics by patterned structures layer 40 and connect the face block, it is little of described second energy gap that the 3rd photovoltaic contact structure 41 has one the 3rd energy gap, comprise that one the 3rd emitter layer (emitter layer) 411 has the first electrical kenel, for example being different from the first second electrical electrical kenel for n type and one the 3rd base layer (base layer) 412 have, for example is the p type; Wherein, the 3rd emitter layer 411 and the 3rd base layer 412 have and growth substrate 10 unmatched lattice constants, and for example lattice constant difference is greater than more than 1%, and its material for example comprises InGaAsP (IncGa (1-c) As; 0 c 1) or indium arsenic phosphide gallium (InpGa (1-p) AsqP (1-q); 0 p, q 1);
Step 9: form a photon recovery layer 51 on the 3rd photovoltaic contact structure 41 and patterned structures 40, the material of photon recovery layer 51 comprises that the light to the specific wavelength of light scope has the high reflectance greater than 70%, be preferably light to the absorbing wavelength scope of the 3rd photovoltaic contact structure 41 and have reflectivity greater than 70%, for example for to meet the metal material of above-mentioned condition, or meet conduction distributing Bragg reflecting layer (the Distributed Bragg Reflector of above-mentioned condition; DBR) structure;
Step 10: as shown in Figure 2, one supporter 60 is provided, and form a knitting layer 61 on supporter 60, wherein the material of knitting layer 61 example is metal, metal alloy or conducting polymer composite, and utilizes knitting layer 61 to engage photon recovery layer 51 and supporter 60; The mode that engages for example engages modes such as (eutectic bonding) for gummed engages (glue bonding), solder joints (solder bonding) or is total to gold;
Step 11: remove growth substrate 10 and resilient coating 11, make and expose contact layer 12, the method that wherein removes can be removed growth substrate 10 and resilient coating 11 with directly grinding, or remove resilient coating 11 with the etching solution etching and cause growth substrate 10 removal that comes off, can also laser radiation resilient coating 11, make resilient coating 11 decompose fusions, cause growth substrate 10 removal that comes off;
Step 12: as shown in Figure 3, the contact layer 12 of removing part makes the first photovoltaic contact structure 21 of an exposed part, forms one first electrode 71 on contact layer 12, and forms one second electrode, 72 electric connection supporters 60; First electrode 71 and second electrode 72 are the metal or metal alloy layer of a single or multiple lift lamination;
Step 13: form an anti-reflecting layer 81 on the surface of the exposed part at least of the first photovoltaic contact structure 21, with the multi-junction solar cells 1 of finishing first embodiment of the invention.
As shown in Figure 3, multi-junction solar cells 1 comprises supporter 60, knitting layer 61 is positioned on the surface of supporter 60, second electrode 72 is positioned on another surface of supporter 60, photon recovery layer 51 is positioned on the knitting layer 61, patterned structures layer 41 is positioned on a part of surface of photon recovery layer 51, and define a plurality of cavitys, the 3rd photovoltaic contact structure 41 with the 3rd energy gap is positioned on another part surface of photon recovery layer 51 and a plurality of cavitys, comprise the 3rd base layer 412 and the 3rd emitter layer 411, the second tunnelling contact structure 32 is positioned on the 3rd photovoltaic contact structure 41 and the patterned structures layer 40, comprise the 4th tunnel layer 322 and the 3rd tunnel layer 321, the second photovoltaic contact structure 31 with second energy gap is positioned on the second tunnelling contact structure 32, comprise second base layer 312 and second emitter layer 311, the first tunnelling contact structure 22 is positioned on the second photovoltaic contact structure 31, comprise second tunnel layer 222 and first tunnel layer 221, the first photovoltaic contact structure 21 with first energy gap is positioned on the first tunnelling contact structure 22, comprise first base layer 212 and first emitter layer 211, contact layer 12 is positioned on a part of surface of the first photovoltaic contact structure 21, and forms ohmic contact with the first photovoltaic contact structure 21,71 at first electrode is on contact layer 12, and anti-reflecting layer 81 is positioned on the surface of another part at least of the first photovoltaic contact structure 21.
Sunlight enters multi-junction solar cells 1 from anti-reflecting layer 81, and is absorbed the light of shorter wavelength scope in regular turn by the first photovoltaic contact structure 21 with first energy gap, and conversion produces first current value; Have the second photovoltaic contact structure 31 less than second energy gap of first energy gap absorb in the middle of the light of wave-length coverages, and conversion produces second current value; Have the light that absorbs the longer wavelength scopes less than the 3rd photovoltaic contact structure 41 of the 3rd energy gap of second energy gap, and conversion produces the 3rd current value; Remain unabsorbed light can by photon recovery layer 51 with remaining light again reflected back the 3rd photovoltaic contact structure 41 absorb again, to compensate the 3rd photovoltaic contact structure 41 occupies the surface area convertible zone of causing of part because of patterned structures layer 40 loss.The pattern of patterned structures layer 40 comprises parallel stripes 4a or staggered striped 4b as shown in Figure 4, formed fringe density account for multi-junction solar cells 1 area 1～10%, make the 3rd current value that the conversion of the 3rd photovoltaic contact structure 41 produces near or second current value that produces of first current value that produces greater than 21 conversions of the first photovoltaic contact structure or 31 conversions of the second photovoltaic contact structure the two one of.The width of described parallel stripes or staggered striped between 0.5 μ m～5 μ m, highly approximately between 0.5 μ m～5 μ m, depends on the thickness of the 3rd photovoltaic contact structure 41 of formation approximately; The ratio of the height and the width of described parallel stripes or staggered striped between 0.1～10, is preferably between 0.5～5 approximately.The material of patterned structures layer 40 is preferably the good amorphous material of insulating properties, for example is oxide or nitride material.In addition, because the 3rd photovoltaic contact structure 41 and substrate 10 be not for lattice matches, when epitaxial growth, form line easily and misplace (threaddislocation) and extend upward, and influence the extension quality, and then influence the conversion efficiency of multi-junction solar cells; The unmatched result of lattice also can cause cumulative stress and the wafer curved transitions be arranged easily and damaged situation.Patterned structures layer 40 of the present invention can effectively stop line dislocation (thread dislocation) to continue to extend upward, and by the 3rd photovoltaic contact structure 41 being placed in patterned structures layer 40 formed a plurality of cavity, the formed Stress Release that lattice can not matched is eliminated the situation of silicon wafer warpage fragmentation.
Manufacture method and the structure thereof of second embodiment of the open multi-junction solar cells of the present invention of Fig. 5～Fig. 6, the detailed step of its manufacture method discloses as follows:
Step 1: as shown in Figure 5, one growth substrate 10 at first is provided, its material comprises germanium (Ge), sige alloy (SiGe) or GaAs (GaAs), and grow a resilient coating 11 on growth substrate 10, wherein resilient coating 11 has the lattice constant that is complementary with growth substrate 10 and the material different with growth substrate 10, for example is GaAs (GaAs) or InGaP (InGaP);
Step 2: form a contact layer 12 on resilient coating 11, contact layer 12 comprises semi-conducting material, is GaAs for example, and has a high impurity concentration, for example is greater than 1 * 10
18Cm
-3Impurity concentration;
Step 3: grow one first photovoltaic contact structure 21 on contact layer 12, wherein, form a low-resistance ohmic contact between the first photovoltaic contact structure 21 and the contact layer 12; The first photovoltaic contact structure 21 has one first energy gap, comprise that one first emitter layer (emitterlayer) 211 has the first electrical kenel, for example, n type and one first base layer (base layer) 212 be different from the first second electrical electrical kenel for having, it for example is the p type, wherein first emitter layer 211 and first base layer 212 have the lattice constant that is complementary with growth substrate 10, and its material for example comprises AlGaInP (AlaInbGa (1-a-b) P; 0 a, b 1);
Step 4: growing one first tunnelling contact structure 22 on the first photovoltaic contact structure 21, comprise that first tunnel layer 221 has the first electrical kenel, for example is the p type, and one is higher than 1 * 10
18Cm
-3Impurity concentration and one second tunnel layer 222 have the second electrical kenel and be different from the first electrical kenel, for example be the n type, and one is higher than 1 * 10
18Cm
-3Impurity concentration, wherein first tunnel layer 221 and second tunnel layer 222 have high impurity concentration and low thickness, for example be less than 500 dusts, to form a high contact structure that conducts electricity;
Step 5: grow one second photovoltaic contact structure 31 on the first tunnelling contact structure 22, wherein to have one second energy gap little of described first energy gap for the second photovoltaic contact structure 31, comprise that one second emitter layer (emitter layer) 311 has the first electrical kenel, for example, n type and one second base layer (base layer) 312 be different from the first second electrical electrical kenel for having, it for example is the p type, wherein second emitter layer 311 and second base layer 312 have the lattice constant that is complementary with growth substrate 10, and its material for example comprises GaAs (GaAs);
Step 6: the one second tunnelling contact structure 32 of growing comprises that the 3rd tunnel layer 321 has the first electrical kenel, for example is the p type, and one is higher than 1 * 10
18Cm
-3Impurity concentration and one the 4th tunnel layer 322 have the second electrical kenel and be different from the first electrical kenel, for example be the n type, and one is higher than 1 * 10
18Cm
-3Impurity concentration, wherein the 3rd tunnel layer 321 and the 4th tunnel layer 322 have high impurity concentration and low thickness, for example be less than 500 dusts, to form a high contact structure that conducts electricity;
Step 7: grow one the 3rd photovoltaic contact structure 90 on the second tunnelling contact structure 32, wherein the 3rd photovoltaic contact structure 90 have one the 3rd energy gap less than or etc. at described second energy gap, comprise that one the 3rd emitter layer 91 has the first electrical kenel, it for example is the n type, one the 3rd base layer 93 has and is different from the first second electrical electrical kenel, it for example is the p type, and one quantum dot region 92 between the 3rd emitter layer 91 and the 3rd base layer 93, wherein the 3rd emitter layer 91 and the 3rd base layer 93 have the lattice constant that is complementary with growth substrate 10, and its material for example comprises InGaAsP (IncGa (1-c) As; 0c 1) or indium arsenic phosphide gallium (InpGa (1-p) AsqP (1-q); 0 p, q 1); Quantum dot region 92 comprise a plurality of cover layers (cap layer) 921, a plurality of quantum well layer 922, and a plurality of quantum dot layers 923 pile up formation in regular turn alternately, wherein, cover layer 921 can be simultaneously as the surface undulation of a barrier layer (barrier layer), to keep the evenness of element surface to concentrate charge carrier (electronics or hole) to cause with planarization quantum dot layer 923 at quantum dot layer 923 or quantum well layer 922 and flatness layer; The material that the material of cover layer 921 is for example identical with the 3rd emitter layer 91, and with the 3rd emitter layer 91 identical electrical extrinsic (extrinsic) semiconductor layers or intrinsic (intrinsic) semiconductor layer of non-doping; Quantum well layer 922 is formed on the cover layer 921, have an energy gap and be lower than cover layer 921, and one lattice constant do not match the material of growth substrate 10, for example lattice constant and growth substrate 10 differences are greater than (IndGa (1-d) As of the InGaAsP more than 1%; 0 d 1) or indium arsenic phosphide gallium (InpGa (1-r) AsqP (1-s); 0 r, s 1) material, the thickness of quantum well layer 922 is preferably between 1～5nm between 1～10nm, lattice defect is unlikely in fact forms and extend upward; Quantum dot layer 923 is formed on the quantum well layer 922, and the quantum dot (quantum dot) by a plurality of irregular alignments is formed, have the material identical in fact with quantum well layer 922, and quantum dot layer 923 forms the energy gap that a plurality of energy gaps are different from quantum well layer 922, quantum dot 8a, the 8b of different size as shown in Figure 8,8c correspondence have a plurality of different quantum energy gap Ega, Egb, reach the energy gap Egd of Egc greater than quantum well layer 922, but so as to improving the scope of correspondence absorption spectrum, and then improve the conversion efficiency of the 3rd photovoltaic contact structure 90; Quantum dot layer 923 is essentially the discontinuous opto-electronic conversion structure that diameter is formed between the quantum dot a plurality of separated from one another of 1～10nm, removes and can improve conversion efficiency, more helps to discharge the stress that does not match and produce because of lattice;
Step 8: form a photon recovery layer 51 on the 3rd photovoltaic contact structure 41, the material of photon recovery layer 51 comprises that the light to the specific wavelength of light scope has the reflectivity greater than 70%, particularly the light of the absorbing wavelength scope of the 3rd photovoltaic contact structure 90 had reflectivity greater than 70%, for example for to meet the metal material of above-mentioned condition, or meet conduction distributing Bragg reflecting layer (the Distributed Bragg Reflector of above-mentioned condition; DBR) structure;
Step 9: as shown in Figure 6, one supporter 60 is provided, and form a knitting layer 61 on supporter 60, wherein the material of knitting layer 61 example is metal, metal alloy or conducting polymer composite, and utilizes knitting layer 61 to engage photon recovery layer 51 and supporter 60; The mode that engages for example engages modes such as (eutectic bonding) for gummed engages (glue bonding), solder joints (solder bonding) or is total to gold;
Step 10: remove growth substrate 10 and resilient coating 11, make and expose contact layer 12, the method that wherein removes can be removed growth substrate 10 and resilient coating 11 with grinding, or cause growth substrate 10 removal that comes off with etching solution etch buffer layers 11, can also laser radiation resilient coating 11, make resilient coating 11 decompose fusions, cause growth substrate 10 removal that comes off;
Step 11: as shown in Figure 7, the contact layer 12 of removing part makes the first photovoltaic contact structure 21 of an exposed part, and forms one first electrode 71 on contact layer 12, and forms one second electrode, 72 electric connection supporters 60; First electrode 71 and second electrode 72 are the metal or metal alloy layer of a single or multiple lift lamination;
Step 12: form an anti-reflecting layer 81 on the surface of the exposed part at least of the first photovoltaic contact structure, with the multi-junction solar cells 2 of finishing second embodiment of the invention.
As shown in Figure 7, multi-junction solar cells 2 comprises supporter 60, knitting layer 61 is positioned on the surface of supporter 60, second electrode 72 is positioned on another surface of supporter 60, photon recovery layer 51 is positioned on the knitting layer 61, the 3rd photovoltaic contact structure 90 with the 3rd energy gap is positioned on the photon recovery layer 51, comprise the 3rd base layer 93, quantum dot region 92, and the 3rd emitter layer 91, the second tunnelling contact structure 32 is positioned on the 3rd photovoltaic contact structure 90, comprise the 4th tunnel layer 322 and the 3rd tunnel layer 321, the second photovoltaic contact structure 31 with second energy gap is positioned on the second tunnelling contact structure 32, comprise second base layer 312 and second emitter layer 311, the first tunnelling contact structure 22 be positioned at the second photovoltaic contact structure 31 and on, comprise second tunnel layer 222 and first tunnel layer 221, the first photovoltaic contact structure 21 with first energy gap is positioned on the first tunnelling contact structure 22, comprise first base layer 212 and first emitter layer 211, contact layer 12 is positioned on a part of surface of the first photovoltaic contact structure 21, and forms ohmic contact with the first photovoltaic contact structure 21,71 at first electrode is on contact layer 12, and anti-reflecting layer 81 is positioned on the surface of another part at least of the first photovoltaic contact structure 21.
Sunlight enters multi-junction solar cells 2 from anti-reflecting layer 81, and is absorbed the light of shorter wavelength scope in regular turn by the first photovoltaic contact structure 21 with first energy gap, and conversion produces first current value; Have the second photovoltaic contact structure 31 less than second energy gap of first energy gap absorb in the middle of the light of wave-length coverages, and conversion produces second current value; Have the 3rd photovoltaic contact structure 90 less than the 3rd energy gap of second energy gap and comprise a discontinuous opto-electronic conversion structure of forming by quantum dot layer, absorb the light of longer wavelength scope, and conversion produces the 3rd current value; Remain unabsorbed light can by photon recovery layer 51 with remaining light again reflected back the 3rd photovoltaic contact structure 90 absorb again, to compensate the 3rd photovoltaic contact structure 41 does not form the convertible zone that quantum dot region causes because of part loss.In addition, because the 3rd photovoltaic contact structure 90 and substrate 10 be not for lattice matches, when epitaxial growth, form line easily and misplace (thread dislocation) and extend upward, and influence the extension quality, and then influence the conversion efficiency of multi-junction solar cells; The unmatched result of lattice also can cause cumulative stress and the situation of silicon wafer warpage fragmentation is arranged easily.The quantum dot region 92 of present embodiment comprises the discontinuous opto-electronic conversion structure that a plurality of discontinuous quantum dot of quantum dot layer 923 is formed, can effectively stop line dislocation (threaddislocation) to continue to extend upward, eliminate the stress that lattice does not match and causes, and, therefore can form a plurality of different quantum energy gaps and improve conversion efficiency because described a plurality of quantum dots are of different sizes.The lamination number of quantum dot layer 923 is between 5～100 layers, be preferably 10～70 layers, make the 3rd current value that the conversion of the 3rd photovoltaic contact structure 90 produces near or second current value that produces of first current value that produces greater than 21 conversions of the first photovoltaic contact structure or 31 conversions of the second photovoltaic contact structure the two one of.
The 3rd embodiment of the open multi-junction solar cells structure of the present invention of Fig. 9, compared to multi-junction solar cells shown in Figure 72, main difference is that the quantum dot region 92 of multi-junction solar cells 3 only comprises that a plurality of cover layers (cap layer) 921 and a plurality of quantum dot layer 923 pile up formation in regular turn alternately, the quantum well layer 922 that does not comprise Fig. 7, therefore, in multi-junction solar cells 3, cause the unmatched quantum dot layer 923 of lattice to be the discontinuous distributed in three dimensions of point-like, do not comprise that the quantum well layer 922 as Fig. 7 covers whole surface comprehensively continuously, therefore can further reduce the stress that lattice defect and lattice do not match and cause, improve the photoelectric conversion efficiency of element.
The present invention discloses a multi-junction solar cells and comprises a discontinuous opto-electronic conversion structure, within the scope of the invention, described discontinuous opto-electronic conversion structure can be formed on the first photovoltaic contact structure, the second photovoltaic contact structure, and the 3rd photovoltaic contact structure at least one of them.Described discontinuous opto-electronic conversion structure includes but not limited to that the discontinuous photovoltaic that is positioned at the defined a plurality of cavity of described patterned structures layer that the embodiment of the invention proposes connects the face block; Or comprise described a plurality of quantum dot at the described quantum dot layer that another embodiment of the present invention proposed.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit the scope of the invention only.Anyone does not all break away from spirit of the present invention and scope to any apparent and easy to know modification or the change that the present invention did.
Claims (10)
1. a multi-junction solar cells comprises:
One supporter;
One first photovoltaic contact structure is positioned on this supporter, produces first current value in order to the light conversion that absorbs first wave-length coverage; And
One second photovoltaic contact structure is positioned on this first photovoltaic contact structure, and lattice does not match the first photovoltaic contact structure, and the light conversion that is different from second wave-length coverage of first wave-length coverage in order to absorption produces second current value;
Wherein, this second photovoltaic contact structure of this of at least a portion first a photovoltaic contact structure or a part comprises a discontinuous opto-electronic conversion structure.
2. multi-junction solar cells according to claim 1, wherein this discontinuous opto-electronic conversion structure comprises that regularly arranged discontinuous photovoltaic connects the face block.
3. multi-junction solar cells according to claim 1 comprises that also fixed those the discontinuous photovoltaics of a patterned structures stratum boundary connect the face block.
4. multi-junction solar cells according to claim 3, wherein this patterned structures layer comprises a plurality of stripeds.
5. multi-junction solar cells according to claim 1, wherein this discontinuous opto-electronic conversion structure is the quantum dot that a quantum dot layer comprises a plurality of irregular alignments.
6. multi-junction solar cells according to claim 1, wherein this discontinuous opto-electronic conversion structure is a plurality of stacked quantum dot layers, respectively this quantum dot layer comprises the quantum dot of a plurality of irregular alignments.
7. multi-junction solar cells according to claim 1, wherein this first photovoltaic contact structure has this discontinuous opto-electronic conversion structure.
8. multi-junction solar cells according to claim 1, wherein this first current value near or greater than this second current value.
9. multi-junction solar cells according to claim 1 comprises that also a knitting layer is between this supporter and this first photovoltaic contact structure.
10. multi-junction solar cells according to claim 1 comprises that also a photon recovery layer is between this knitting layer and this first photovoltaic contact structure.
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| CN2010101170143A CN102148266A (en) | 2010-02-09 | 2010-02-09 | Multi-junction solar cell |
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| CN2010101170143A CN102148266A (en) | 2010-02-09 | 2010-02-09 | Multi-junction solar cell |
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