CN108091709A - A kind of silicon zinc multidimensional photovoltaic material and preparation method thereof - Google Patents
A kind of silicon zinc multidimensional photovoltaic material and preparation method thereof Download PDFInfo
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- CN108091709A CN108091709A CN201711382866.3A CN201711382866A CN108091709A CN 108091709 A CN108091709 A CN 108091709A CN 201711382866 A CN201711382866 A CN 201711382866A CN 108091709 A CN108091709 A CN 108091709A
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- silicon
- zinc
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- photovoltaic cell
- germanium
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- LGERWORIZMAZTA-UHFFFAOYSA-N silicon zinc Chemical compound [Si].[Zn] LGERWORIZMAZTA-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 17
- 239000011701 zinc Substances 0.000 claims abstract description 17
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 238000007639 printing Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims 1
- 238000010248 power generation Methods 0.000 abstract description 6
- 238000001228 spectrum Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910052782 aluminium Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention provides a kind of silicon zinc multidimensional photovoltaic cells and preparation method thereof.Battery formula：Zinc 10-50%, silicon 30-80%, selenate 1-20%, germanium 1-20% form.Battery preparation method：1st, the back electrode of silicon zinc multidimensional photovoltaic cell is made：After slurry containing zinc is printed on the back side and front of monocrystalline silicon or polycrystalline silicon substrate, the silicon substrate after printing is placed in be sintered in tube furnace or meshbeltfurnace and is spread, zinc is made to be combined into the alloy-layer as silicon zinc multidimensional photovoltaic cell back electrode and grid with silicon.2nd, silicon photocell front is made：In silicon substrate front one layer of selenate slurry of brush, it is placed in tube furnace or meshbeltfurnace and sinters finished product into；Alternatively, more than finished surface again using PVD, CVD, Ion implantation the methods of one layer of germanium of resolidification.Silicon zinc multidimensional photovoltaic cell provided by the invention can also absorb the electromagnetic wave of the ground court including THz wave and universe characteristic wavelengths on a large scale in addition to light wave that can be in overall absorption solar spectrum, promote the power generation performance of related photovoltaic material.
Description
Technical field
The present invention relates to photovoltaic material technical field more particularly to a kind of silicon zinc multidimensional photovoltaic material and preparation methods.
Background technology
Development of the photovoltaic power generation technology after a nearly century occupies most important in all regenerative resources at present
Position.But due to either monocrystalline silicon or polysilicon or non-crystalline silicon, as silicon photocell, their not only materials
Cost remains high always, and its photoelectric conversion rate is difficult further to be promoted always.
Current internationally recognized highest photoelectric conversion rate is 24% under the conditions of AM1.5, and space is 13.5-18% with efficiency,
Ground is 11-18% with efficiency.Due to existing photovoltaic material, not only cost is higher, but also photoelectric conversion rate is relatively low, therefore comprehensively
The conception for promoting photovoltaic power generation technology is difficult.There are two the reason for causing more than situation is main：
1st, the back electrode of existing silicon photocell is all to be printed on the silicon substrate back side and front with silver paste, it reburns and forms work
For battery back electrode and the alloy-layer of grid.Although silver is with excellent conduction and heat conductivility, silver electrode is as nothing
Sizing high density structures, although this structure introduces silver-colored impurity into silicon, since silver not only itself can generate defect, but also
Can also be with defect complexing in silicon structure into complex centre, and then carrier lifetime is seriously affected, reduce the performance of silicon photocell.
2nd, either monocrystalline silicon or polysilicon or non-crystalline silicon, as silicon photocell, their internal structure institute can be right
Answer optical wavelength that can only all be confined between the 800-1100nm near feux rouges, and present in spatial surface can by photovoltaic technology profit
Electromagnetic wave species has a large amount of spatial electromagnetics that can not have here in fact far more than this scope in existing photovoltaic power generation technology
It can be utilized.
The content of the invention
The embodiment provides a kind of material prescription and battery production method for making silicon zinc multidimensional photovoltaic cell,
To realize more and gather luminous energy and other electromagnetic energy in bigger wave-length coverage, to achieve these goals, this invention takes
Following technical solution.A kind of silicon zinc multidimensional photovoltaic cell, is made of each component of following weight percent：Zinc 10-50%, silicon
30-80%, selenate 1-20% and germanium 1-20%.
Further, each component in the silicon zinc multidimensional photovoltaic cell is in the proportion of respective weight percent
It is interior, weight percent is adjusted at random according to different purposes and different external conditions.
A kind of production method of silicon zinc multidimensional photovoltaic cell, the silicon zinc multidimensional photovoltaic cell is by following weight percent
Each component is made：Zinc 10-50%, silicon 30-80%, selenate 1-20% and germanium 1-20%, the described method includes：
Step 10：Make the back electrode of silicon zinc multidimensional photovoltaic cell：Zinc slurry will be contained and be printed on monocrystalline silicon or polycrystalline silicon substrate
Behind the back side and front of material, the monocrystalline silicon after printing or polycrystalline silicon substrate are placed in be sintered in tube furnace or meshbeltfurnace and spread, is made
Zinc is combined into the alloy-layer as silicon zinc multidimensional photovoltaic cell back electrode and grid with silicon；
Step 20：Make the front of silicon zinc multidimensional photovoltaic cell：It, will after front one layer of selenate slurry of brush of silicon substrate
Silicon substrate is placed in tube furnace or meshbeltfurnace and sinters finished product into.
Step 30：There is the front of selenate and germanium by the back electrode and grid and sintering of the silicon zinc multidimensional photovoltaic cell
Form silicon zinc multidimensional photovoltaic cell.
Further, the surface of the finished product obtained in the step 20 uses PVD, CVD or Ion implantation
Method cures one layer of germanium.
Further, the silicon substrate is monocrystalline silicon or polycrystalline silicon substrate.
Silicon zinc multidimensional provided in an embodiment of the present invention it can be seen from the technical solution provided by embodiments of the invention described above
Material can also absorb the ground court including THz wave on a large scale in addition to light wave that can be in overall absorption solar spectrum
With the electromagnetic wave of universe characteristic wavelengths, the power generation performance of related photovoltaic material can be significantly promoted.
The additional aspect of the present invention and advantage will be set forth in part in the description, these will become from the following description
It obtains substantially or is recognized by the practice of the present invention.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without creative efforts, others are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of process chart of the production method of silicon zinc multidimensional photovoltaic cell provided in an embodiment of the present invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the present invention, and is not construed as limiting the claims.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative " one " used herein, " one
It is a ", " described " and "the" may also comprise plural form.It is to be further understood that is used in the specification of the present invention arranges
Diction " comprising " refers to there are the feature, integer, step, operation, element and/or component, but it is not excluded that presence or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when we claim member
Part is " connected " or during " coupled " to another element, it can be directly connected or coupled to other elements or there may also be
Intermediary element.In addition, " connection " used herein or " coupling " can include wireless connection or coupling.Wording used herein
"and/or" includes any cell of one or more associated list items and all combines.
Those skilled in the art of the present technique are appreciated that unless otherwise defined all terms used herein are (including technology art
Language and scientific terminology) there is the meaning identical with the general understanding of the those of ordinary skill in fields of the present invention.Should also
Understand, those terms such as defined in the general dictionary, which should be understood that, to be had and the meaning in the context of the prior art
The consistent meaning of justice, and unless defined as here, will not be with idealizing or the meaning of overly formal be explained.
For ease of the understanding to the embodiment of the present invention, done further by taking several specific embodiments as an example below in conjunction with attached drawing
Explanation, and each embodiment does not form the restriction to the embodiment of the present invention.
Embodiment one
Since zinc crystallization is hexagonal structure, and silicon and germanium are diamond lattic structure.In crystallography, hexagonal structure and gold
Hard rock structure strictly corresponds to.According to there is identical structure, that is, the structural-functional method for having identical function, there is deep between zinc, silicon, germanium
Inner link.Therefore silver is substituted with zinc and aluminum makees the back electrode of silicon photoelectromagnetic, obviously will not occur silver electrode again here
As defective undefined structure, complex centre is complexed with the defects of silicon structure formation, and then seriously reduces silicon photocell
The problem of performance.It is superimposed again with germanium in the presence of light-sensitive material selenium with silicon, since the multidimensional of more than element cooperates with, they are being adopted
Many complementary relationships will necessarily be formed when collecting luminous energy, and then greatly expand multidimensional photovoltaic cell to correspond to and gather wherein energy
Electromagnetic wave scope, this i.e. the present invention basic principle.
The photocell of different materials corresponds to lambda1-wavelength peak value of response difference, such as the peak in the spectral response of silicon photocell
Near 800nm, and the spectral response of selenium cell, then near 500nm, this shows that the component of material determines the light of material
Electrical property.Not only also there is the energy not utilized by the acquisition of existing photovoltaic technology largely, but also in ground court in solar spectrum
With in the presence of universe can be even more by the energy that material technology acquisition utilizes by the mankind, such as in Terahertz wave frequency
It there is such energy in section.
An embodiment of the present invention provides a kind of silicon zinc multidimensional photovoltaic materials, are made of each component of following weight percent：
Zinc 10-50%, silicon 30-80%, selenate 1-20% and germanium 1-20%.
Each component in above-mentioned silicon zinc multidimensional photovoltaic cell is in the proportion of respective weight percent, according to difference
Purposes and different external conditions adjust weight percent at random.
Embodiment two
The embodiment of the present invention additionally provides a kind of production method of above-mentioned silicon zinc multidimensional photovoltaic cell, the processing stream of this method
Journey is as shown in Figure 1, including following processing step：
Step S10：Make the back electrode of silicon zinc multidimensional photovoltaic cell：Zinc slurry will be contained and be printed on monocrystalline silicon or polycrystalline silicon substrate
Behind the back side and front of material, the monocrystalline silicon after printing or polycrystalline silicon substrate are placed in be sintered in tube furnace or meshbeltfurnace and spread, is made
Zinc is combined into the alloy-layer as silicon zinc multidimensional photovoltaic cell back electrode and grid with silicon.Sintering temperature can be 400-950
Degree, sintering time can be 1-4 hours.
Step S20：Make the front of silicon zinc multidimensional photovoltaic cell：
Scheme one in monocrystalline silicon or polycrystalline silicon substrate front one layer of selenate slurry of brush, is placed in tube furnace or meshbeltfurnace
Sinter finished product into.
Scheme two uses PVD (Physical Vapor Deposition gas phase physical depositions again in more than finished surface
Or physical vapor deposition technology), CVD (Chemical Vapor Deposition vapour deposition processes or chemical vapors deposition skill
Art), Ion implantation (ion implantation technique) the methods of one layer of germanium of resolidification.Two above scheme can obtain two kinds of light
Electric conversion ratio raised silicon zinc multidimensional photovoltaic cell successively.
Step 30：There is the front of selenate and germanium by the back electrode and grid and sintering of the silicon zinc multidimensional photovoltaic cell
Form silicon zinc multidimensional photovoltaic cell.
In conclusion silicon zinc multidimensional photovoltaic cell provided in an embodiment of the present invention except can be in overall absorption solar spectrum light
Outside ripple, while the electromagnetic wave of the ground court including THz wave and universe characteristic wavelengths can be also absorbed on a large scale, it can be big
Amplitude promotes the power generation performance of related photovoltaic material, improves the performance of silicon photocell.
One of ordinary skill in the art will appreciate that：Attached drawing is the schematic diagram of one embodiment, module in attached drawing or
Flow is not necessarily implemented necessary to the present invention.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Point just to refer each other, and the highlights of each of the examples are difference from other examples.Especially for device or
For system embodiment, since it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to method
The part explanation of embodiment.Apparatus and system embodiment described above is only schematical, wherein the conduct
The unit that separating component illustrates may or may not be it is physically separate, the component shown as unit can be or
Person may not be physical location, you can be located at a place or can also be distributed in multiple network element.It can root
Factually border needs to select some or all of module therein realize the purpose of this embodiment scheme.Ordinary skill
Personnel are without creative efforts, you can to understand and implement.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
Subject to.
Claims (5)
1. a kind of silicon zinc multidimensional photovoltaic cell, which is characterized in that be made of each component of following weight percent：Zinc 10-
50%th, silicon 30-80%, selenate 1-20% and germanium 1-20%.
2. silicon zinc multidimensional photovoltaic cell according to claim 1, which is characterized in that in the silicon zinc multidimensional photovoltaic cell
Each component adjusts weight hundred at random in the proportion of respective weight percent, according to different purposes and different external conditions
Divide ratio.
3. a kind of production method of silicon zinc multidimensional photovoltaic cell, which is characterized in that the silicon zinc multidimensional photovoltaic cell by weighing as follows
The each component of amount percentage is made：Zinc 10-50%, silicon 30-80%, selenate 1-20% and germanium 1-20%, the method
Including：
Step 10：Make the back electrode of silicon zinc multidimensional photovoltaic cell：Slurry containing zinc is printed on monocrystalline silicon or polycrystalline silicon substrate
The back side and front after, by the monocrystalline silicon after printing or polycrystalline silicon substrate be placed in tube furnace or meshbeltfurnace be sintered spread, make zinc with
Silicon is combined into the alloy-layer as silicon zinc multidimensional photovoltaic cell back electrode and grid；
Step 20：Make the front of silicon zinc multidimensional photovoltaic cell：After front one layer of selenate slurry of brush of silicon substrate, by silicon substrate
Material is placed in tube furnace or meshbeltfurnace and sinters finished product into；
Step 30：The front for having selenate and germanium by the back electrode and grid and sintering of the silicon zinc multidimensional photovoltaic cell is formed
Silicon zinc multidimensional photovoltaic cell.
4. according to the method described in claim 3, it is characterized in that, the surface of the finished product obtained in the step 20 uses
PVD, CVD or Ion implantation methods cure one layer of germanium.
5. the method according to claim 3 or 4, which is characterized in that the silicon substrate is monocrystalline silicon or polycrystalline silicon substrate.
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| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
| CN105810287A (en) * | 2016-03-22 | 2016-07-27 | 广西吉宽太阳能设备有限公司 | Paste for crystalline silicon solar cell |
| CN107046067A (en) * | 2015-11-24 | 2017-08-15 | 普兰特光伏有限公司 | The solar cell and module stacked with sintered multilayer |
-
2017
- 2017-12-20 CN CN201711382866.3A patent/CN108091709A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390622A (en) * | 2012-05-11 | 2013-11-13 | 冠晶光电股份有限公司 | Layered solar battery structure |
| CN103650238A (en) * | 2013-03-22 | 2014-03-19 | 深圳首创光伏有限公司 | Electrocondution slurry of positive electrode of solar cell and preparing method thereof |
| CN103872160A (en) * | 2014-03-14 | 2014-06-18 | 惠州市易晖太阳能科技有限公司 | Mixed stacked type solar component and manufacturing method thereof |
| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
| CN107046067A (en) * | 2015-11-24 | 2017-08-15 | 普兰特光伏有限公司 | The solar cell and module stacked with sintered multilayer |
| CN105810287A (en) * | 2016-03-22 | 2016-07-27 | 广西吉宽太阳能设备有限公司 | Paste for crystalline silicon solar cell |
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