CN102290479A - CdZnTe/monocrystalline silicon laminated solar cell - Google Patents
CdZnTe/monocrystalline silicon laminated solar cell Download PDFInfo
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- CN102290479A CN102290479A CN2011102431516A CN201110243151A CN102290479A CN 102290479 A CN102290479 A CN 102290479A CN 2011102431516 A CN2011102431516 A CN 2011102431516A CN 201110243151 A CN201110243151 A CN 201110243151A CN 102290479 A CN102290479 A CN 102290479A
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- solar cell
- monocrystalline silicon
- zinc cadmium
- tellurium zinc
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a CdZnTe/monocrystalline silicon laminated solar cell, which comprises a top CdZnTe solar cell which can absorb short-wave high-energy sunlight and a bottom monocrystalline silicon solar cell which can absorb long-wave low-energy sunlight. During lamination, the back electrode of the top CdZnTe solar cell is fully overlapped with the surface electrode of the bottom monocrystalline silicon solar cell and the light receiving surface of the monocrystalline silicon solar cell can be enabled to fully absorb photons which penetrate through the top cell. The CdZnTe/monocrystalline silicon laminated solar cell has the advantages that the absorbing range of solar spectrums is greatly widened, the utilization ratio of solar energy is improved to the utmost extent, the photoelectric conversion efficiency is improved, and the light energy loss is reduced.
Description
Technical field
The present invention relates to solar cell, specifically be meant a kind of tellurium zinc cadmium/monocrystalline silicon lamination solar cell structure.
Background technology
Solar cell is the device that luminous energy is directly changed into electric energy, and for unijunction solar cell, even if prepare with crystalline material, the theoretical extreme of its photoelectric conversion efficiency generally also only has about 25% under the illumination condition of AM1.5.This is because the Energy distribution broad of solar spectrum has any semi-conducting material now and all only can absorb the wherein energy photon higher than its edge energy.Remaining photon is not to see through battery to be transformed into heat energy by the absorption of back electrode metal, is exactly the atom of energy delivery being given battery material itself, makes material heating itself.These energy all can not become electric energy by producing photo-generated carrier.Moreover, the thermal effect of these photons generations also can raise battery operated temperature and battery performance is descended.
In order farthest effectively to utilize the solar energy in the broader wave-length coverage, solar spectrum can be divided into continuous several portions, there is best matched materials to make battery with energy width and these parts, and outside in be superimposed together by energy gap order from big to small, allow the shortest light of wavelength by the wide bandgap material battery utilization of ragged edge, the long light of wavelength can transmission enters to allow the utilization of narrower gap material battery, so just might convert solar energy to electric energy to greatest extent, the solar cell with this structure is called laminated cell.
The high-performance monocrystalline silicon battery is to be based upon on high quality single crystal silicon materials and the relevant ripe processed technology basis.The technology of monocrystalline silicon battery is own near ripe now, in battery is made, generally all adopts technology such as surface-texturing, emitter region passivation, subregion doping, and the battery of exploitation mainly contains plane monocrystalline silicon battery and grooving and grid burying electrode monocrystalline silicon battery.In silicon series solar cell, the big sun of monocrystalline silicon is can battery conversion efficiency the highest, and technology is also ripe, dominate always in large-scale application and industrial production, and the transformation efficiency of monocrystaline silicon solar cell surpasses 23% at present.
Because the energy gap of monocrystalline silicon is 1.1eV, makes material itself insensitive to the short wavelength regions of solar radiation spectrum, this has just limited the conversion efficiency of monocrystaline silicon solar cell.And tellurium zinc cadmium (Cd
1-xZn
xTe) energy gap with the x value at 1.45eV to adjustable continuously between 2.26eV.If tellurium zinc cadmium solar cell and monocrystaline silicon solar cell are superimposed together, realize a kind of design of laminated construction, just can realize fully solar spectrum being responded, improve the photoelectric conversion efficiency of solar cell.
Summary of the invention
Purpose of the present invention will propose a kind of laminated construction that has, and can fully respond the tellurium zinc cadmium/monocrystalline silicon lamination solar cell of solar spectrum scope.
Tellurium zinc cadmium of the present invention/monocrystalline silicon lamination solar cell comprises: the tellurium zinc cadmium solar cell of the high energy sunlight of shortwave is partial in an absorption that is positioned at the top, and the monocrystaline silicon solar cell of the low energy sunlight of long wave is partial in an absorption that is positioned at the bottom.
Described tellurium zinc cadmium solar cell comprises: glass substrate deposits electrode layer before the transparent conductive oxide, n type CdS Window layer, p type tellurium zinc cadmium absorbed layer, transparency conducting layer, back electrode successively on glass substrate.
Described monocrystaline silicon solar cell is made up of by surface electrode and backplate that printing forms at the surface and the back side of pn knot the pn knot that forms by gas phase diffusion on single crystal silicon wafer.
The shape of the back electrode of described tellurium zinc cadmium solar cell and the surface electrode of monocrystaline silicon solar cell and size are in full accord.
The advantage of structure of the present invention is: expanded the absorption region to solar spectrum greatly, farthest improved the utilization of solar energy, improved photoelectric conversion efficiency, reduced optical energy loss.
Description of drawings
Fig. 1 is the structural representation of tellurium zinc cadmium of the present invention/monocrystalline silicon lamination solar cell.
Fig. 2 is a preparation of the present invention top tellurium zinc cadmium back electrode of solar cell mask plate structure schematic diagram.
Embodiment
Provide preferred embodiment of the present invention below, and elaborate in conjunction with the accompanying drawings.
See Fig. 1, this tellurium zinc cadmium/monocrystalline silicon lamination solar cell comprises: the top can absorb the tellurium zinc cadmium solar cell of the high energy sunlight of being partial to shortwave and the monocrystaline silicon solar cell that the bottom can absorb the low energy sunlight of deflection long wave.
Wherein top tellurium zinc cadmium solar cell comprises: glass substrate 1, electrode layer 2, n type CdS Window layer 3, p type tellurium zinc cadmium absorbed layer 4, transparency conducting layer 5, back electrode 6 before the transparent conductive oxide that deposits successively on glass substrate 1.
Its preparation process is as follows:
At first, thermal evaporation thickness is electrode layer 2 before the transparent conductive oxide of 200～800 nanometers on glass substrate 1, and material is any among ITO, SnO2:F, the ZnO:Al.
Magnetron sputtering thickness is the n type CdS Window layer 3 of 50～100 nanometers on preceding electrode layer 2.
Adopt RF sputtering method to deposit p type tellurium zinc cadmium absorbed layer 4 on n type CdS Window layer 3, thickness is 500～2000 nanometers.
After preparing p type tellurium zinc cadmium absorbed layer 4, place it in the quick anneal oven and anneal.Annealing temperature is at 200～400 ℃, annealing time 40～120 minutes.
Annealing deposits the carbon nanotube coating of 50～400 nanometers as transparency conducting layer 5 with chemical spraying method after finishing on tellurium zinc cadmium absorbed layer 4.
Then mask plate (as Fig. 2) is covered on the transparency conducting layer 5, deposit the back electrode 6 of the Au of the Cu of 3～4 nanometers and 20～30 nanometers with thermal evaporation method successively.
Wherein the bottom monocrystaline silicon solar cell comprises: pn knot, backplate 10 that surface electrode 7, monocrystalline silicon semiconductor n type layer 8 and p type layer 9 form.
Its preparation process is as follows:
Adopt the method for gas phase diffusion, make the pn knot on single crystal silicon wafer, the method for utilizing silk screen printing is at its surface and the direct type metal electrode in the back side.
For the back electrode 6 of avoiding top tellurium zinc cadmium solar cell hides the sensitive surface of bottom monocrystaline silicon solar cells, when the surface electrode 7 of the back electrode 6 of preparation tellurium zinc cadmium solar cell and monocrystaline silicon solar cell, adopt identical mask plate, as Fig. 2.
Then, the tellurium zinc cadmium solar cell and the monocrystaline silicon solar cell that prepare are superimposed together, the back electrode 6 of tellurium zinc cadmium solar cell is overlapped fully with the surface electrode 7 of monocrystaline silicon solar cell, to avoid the sensitive surface of back electrode 6 covering monocrystaline silicon solar cells, superimposed good solar cell package can be obtained the tellurium zinc cadmium/monocrystalline silicon lamination solar cell of high-photoelectric transformation efficiency.
Claims (3)
1. tellurium zinc cadmium/monocrystalline silicon lamination solar cell, it is characterized in that, comprise: the tellurium zinc cadmium solar cell of the high energy sunlight of shortwave is partial in an absorption that is positioned at the top, and the monocrystaline silicon solar cell of the low energy sunlight of long wave is partial in an absorption that is positioned at the bottom;
Described tellurium zinc cadmium solar cell comprises: glass substrate (1) deposits electrode layer (2) before the transparent conductive oxide, n type CdS Window layer (3), p type tellurium zinc cadmium absorbed layer (4), transparency conducting layer (5), back electrode (6) successively on glass substrate;
Described monocrystaline silicon solar cell is made up of by surface electrode (7) and backplate (10) that printing forms at the surface and the back side of pn knot the pn knot that forms by gas phase diffusion on single crystal silicon wafer.
2. according to a kind of tellurium zinc cadmium/monocrystalline silicon lamination solar cell of claim 1, it is characterized in that: the shape of the back electrode (6) of described tellurium zinc cadmium solar cell and the surface electrode (7) of monocrystaline silicon solar cell and size are in full accord.
3. according to a kind of tellurium zinc cadmium/monocrystalline silicon lamination solar cell of claim 1, it is characterized in that: when the monocrystaline silicon solar cell of described top tellurium zinc cadmium solar cell and bottom was superimposed, back electrode (6) and surface electrode (7) will overlap fully.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011102431516A CN102290479A (en) | 2011-08-23 | 2011-08-23 | CdZnTe/monocrystalline silicon laminated solar cell |
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| CN2011102431516A CN102290479A (en) | 2011-08-23 | 2011-08-23 | CdZnTe/monocrystalline silicon laminated solar cell |
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| CN102290479A true CN102290479A (en) | 2011-12-21 |
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| CN2011102431516A Pending CN102290479A (en) | 2011-08-23 | 2011-08-23 | CdZnTe/monocrystalline silicon laminated solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195714A (en) * | 2017-05-12 | 2017-09-22 | 中国计量大学 | A kind of lamination solar cell containing graphical optical isolation layer |
| CN107546288A (en) * | 2017-09-28 | 2018-01-05 | 戚明海 | A kind of new cadmium zinc tellurium/perovskite/monocrystaline silicon solar cell and preparation method thereof |
| CN113206164A (en) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | Cast tandem multi-junction photovoltaic cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283738A (en) * | 1993-03-26 | 1994-10-07 | Asahi Chem Ind Co Ltd | Photovoltaic device |
| US20080190479A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Optoelectronical semiconductor device |
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
| US20100003781A1 (en) * | 2008-02-28 | 2010-01-07 | Van Duren Jeroen K J | Roll-to-roll non-vacuum deposition of transparent conductive electrodes |
| US20100083999A1 (en) * | 2008-10-01 | 2010-04-08 | International Business Machines Corporation | Tandem nanofilm solar cells joined by wafer bonding |
-
2011
- 2011-08-23 CN CN2011102431516A patent/CN102290479A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283738A (en) * | 1993-03-26 | 1994-10-07 | Asahi Chem Ind Co Ltd | Photovoltaic device |
| US20080190479A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Optoelectronical semiconductor device |
| US20100003781A1 (en) * | 2008-02-28 | 2010-01-07 | Van Duren Jeroen K J | Roll-to-roll non-vacuum deposition of transparent conductive electrodes |
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
| US20100083999A1 (en) * | 2008-10-01 | 2010-04-08 | International Business Machines Corporation | Tandem nanofilm solar cells joined by wafer bonding |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195714A (en) * | 2017-05-12 | 2017-09-22 | 中国计量大学 | A kind of lamination solar cell containing graphical optical isolation layer |
| CN107546288A (en) * | 2017-09-28 | 2018-01-05 | 戚明海 | A kind of new cadmium zinc tellurium/perovskite/monocrystaline silicon solar cell and preparation method thereof |
| CN113206164A (en) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | Cast tandem multi-junction photovoltaic cell |
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Application publication date: 20111221 |