JPS59155974A - Manufacture of photoelectric converter - Google Patents

Abstract

PURPOSE:To assure high yield of manufacture by a method wherein the thickness of a conductive oxide film and a reflective metal comprising an electrode is respectively specified. CONSTITUTION:A light transmitting conductive film is formed on a light transmitting substrate 1 and a groove 13 is formed therein to manufacture the first electrode 2 in the regions 31, 11 between each element. Firstly a non single crystal semiconductor layer 3 is formed on the electrode 2. Secondly the second groove 18 is formed in the element 31 side of the groove 13 exposing the sides 8, 9 of the electrode 2 by laser scribing. Thirdly the second electrode 4, a connector 30 and the third groove 20 are formed on the second groove 18 by laser scribing. The electrode 4 composed of a conductive oxide film 45 is formed into the thickness of 500-1,500Angstrom . Lastly a reflecting metal film 46 is formed into the thickness of 300-3,000Angstrom on the electrode 4. In such a constitution, the film 46 and an alloy layer of Si are prevented from being formed by means of specifying the thickness of the films 45, 46 especially the film 45 while attributing to improve the reliability of the films at high temperature by means of specifying the thickness of the film 46.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a photoelectric conversion element ( A device in which multiple elements (also simply called elements) are electrically connected in series.
The present invention relates to a method for manufacturing a photoelectric conversion device capable of generating high voltage.

This invention uses a laser scribing method (hereinafter referred to as LS), which is a maskless process, in order to reduce the area required for connecting multiple elements to 1/10 to 1/100 of the conventional mask alignment method. It is characterized by
The arrangement, size, and shape of elements in the device of the present invention are determined by design specifications.

However, in order to simplify the content of the present invention, in the following detailed description, the first electrode on the lower side (substrate side) of the first element and the second electrode placed on the right side thereof will be referred to. The pattern will be described based on the case where the second electrode (on the semiconductor, that is, on the side away from the substrate) is electrically connected in series.

In such a pattern, the second electrode of the first element and the second element is formed by forming a two-layer structure of a conductive oxide film and a reflective metal on the crotch. When the second open groove is formed by LS, the leakage current between the electrodes is made to be 10-'A/cm or less.

The present invention is particularly directed to 1. In order to easily create grooves with S at a high manufacturing yield, it is necessary to prepare a conductive oxide film (hereinafter referred to as CO-9) and a reflective metal (hereinafter referred to as 1) that constitute the second electrode.
It was experimentally discovered that there is an optimal thickness for each layer (referred to as 1M).
00 people, and RP is 300 to 3000 people.This invention is characterized in that the second electrode of the first element is and a conductor (hereinafter simply referred to as a connector) that electrically connects the first electrode of the first element and the second electrode of the second element at the connecting part and the second electrode of the second element. This is to prevent electrical leakage from occurring.

Conventionally, in the mask alignment method, the number of connecting parts is 5 to 1.
mm width was required, but the present invention has a width of 1/10 mm to 1/10 mm.
1/100 of 350-30μ, preferably 200-50
By using μ, in a hybrid system that requires 10 to 50 stages of connection parts, the area for photovoltaic generation (referred to as effective area or effective area) of all panels used as photoelectric conversion devices is reduced from 75 ~50% more than 97
It is characterized by substantially increasing the effective conversion efficiency by 10 to 20%.

This invention is a maskless process using the LS method, and this! ! In the J construction process, the open grooves formed in the previous process are
The image is enlarged 0 to 300 times and displayed on a television or the like, and the monitored open groove is addressed in a computer (microcomputer). Furthermore, using this input information as a reference, the position of the open groove to be created in this process is defined by combining the amount of shift from there with the information stored in the memory.

Then, a laser beam for LS, for example, a YAG laser with a wavelength of 1.06 μm (focal length 40 mm, laser beam diameter 25 μψ) is irradiated onto this defined position.

Further, it is moved at a speed of, for example, 5 m/min to create an open groove that is subordinate to the previous process.

Thus, by combining LS with a microcomputer, it has been experimentally determined that the desired value is less than 5μ.
Open grooves in the next process can be created with an accuracy of 5μ or less.

That is, the LS of the present invention has another feature that it is an ultra-high precision method that can perform a substantially computer-controlled self-line method.

Therefore, it is characterized by eliminating all causes of price increases and yield decreases in manufacturing, such as mask misalignment, warping, and decreases in manufacturing yields due to alignment accuracy, which are required in conventional mask alignment methods. .

Conventionally, many examples of photoelectric conversion devices (hereinafter simply referred to as devices), that is, devices in which a plurality of elements are arranged on the same substrate and are integrated, arrayed, or composited, are known.

For example, JP-A-5'-499.4, JP-A-554242
74 Patent application 1986-9009, which was also filed as an unexploited protector
7/90098/90099 (Showa 54.7.16
application) is known.

For example, a patent application that is filed by an unexploited defender is semiconductor 5ix.
This is a heterojunction of C1-y--3i, which is different from the case where only amorphous Si is used, and furthermore, as this semiconductor, PN or halogen element added with hydrogen or halogen containing a microcrystalline structure in addition to the amorphous structure is used. P
It is characterized in that it is an integrated or hybridized non-crystalline semiconductor having at least one IN junction.

However, in these conventional inventions, a vertical cross-sectional view of which is shown in FIG. 1, all of them employ a mask alignment method, which results in insufficient alignment accuracy and requires a large area for the connecting portion.

For example, when a metal mask is used, in a method of directly and selectively producing a conductive layer or a semiconductor layer, the mask that provides this selectivity may shift by 0.5 to 3 mm during film formation.

Furthermore, coating components are formed on this mask, which contaminates the mask and obscures the peripheral edge of the coating formed along the mask, resulting in cross-sections between adjacent electrodes.
It has many drawbacks, such as being a factor in the generation of leakage current.

Furthermore, in conventionally known screen printing methods, conductors or semiconductors formed entirely on a substrate are independently and selectively etched away using a mask.

However, in such a method, a process of positioning a mask for screen printing, a process of coating a resist,
Hake solidification process, etching removal of conductors or semiconductors,
Processes such as the resist removal process take an extremely long time, which inevitably leads to an increase in manufacturing costs.

However, in the photoelectric conversion device of the present invention, particularly in the thin film type photoelectric conversion device, the conductive layer and the semiconductor layer for the first electrode, which are the respective thin film layers, each have a density of 500 to 3000 and 0.2 to 0. , 8μ, 800 to 5000 people, which is the thickness that allows LS, and for this thin film, LS
It has been found that by using this method, it is possible to produce masks without the need for automatic mask alignment using a computer-controlled method.

In particular, the present invention not only uses LS for the first electrode and semiconductor, but also uses CO and R for the configuration of the second electrode.
This is a maskless process manufacturing method in which a device is manufactured by superimposing M and using LS here as well, that is, by using LS three times.

As a result, since the mask of the present invention is not used at all in place of the conventional mask alignment process, it is a maskless process, which is extremely simple and highly accurate, resulting in a reduction in the manufacturing cost of the device, which costs 500 yen/ The purpose of the present invention is to provide an extremely innovative photoelectric conversion device that can now be manufactured using W, and by expanding its manufacturing scale, it has become possible to sell for 100 to 200 yen/W.

A conventional example and the structure of the present invention will be described below according to the drawings.

FIG. 1 is a vertical lji plane view of a conventionally known photoelectric conversion device using a mask alignment method.

In the drawings, a transparent conductive layer (abbreviated as TF) constituting the first electrode is selectively formed on a transparent substrate (for example, a glass plate) (1) by a first mask combining process. do.

Further, a semiconductor layer (3) is similarly selectively formed by a second mask alignment step.

Furthermore, the second electrode (4) is formed by a third mask alignment process.
is provided.

In FIG. 1, there is a connecting part (12) between the elements (11) and (31), and in the connecting part, one side surface (16) of the CTF is covered with a semiconductor layer (3), and the other CTF is covered with a semiconductor layer (3). In order to prevent the semiconductor layer (3) from covering the surface (14) of CrF2, the distance between CrF2 (13) is 1 to . A 5mm example requires a 3mm gap.

Furthermore, the first electrode (37) and the second electrode (38) are (1
It is electrically connected on the surface of 4), but this part is connected to (39)
Since the second electrode of
In particular, this second electrode (39) is characterized by a gap (6) of m.
The alignment accuracy at the exposed semiconductor surface' (28) is critical to manufacturing yield, in order to avoid shorting the connection (
12) has become wider. In addition, the first electrode (37
) and the second electrode (39) are prone to leakage through the semiconductor surface (28), resulting in a decrease in reliability.

Therefore, the first electrode (37) and the second electrode +M (3
9) By covering the surface of the semiconductor between the electrodes with a banshihesion film and making the depth 10 to 150 μm, the structure eliminates leakage between the electrodes, resulting in an excellent improvement in manufacturing yield. It was something. In addition, especially in the present invention, when the distance between the second electrodes of the first and second elements is set to 20 to 50 μm, which is the heel diameter of the LS, in order to prevent the metal from manbrading over this distance, , this second electrode is not only made of metal, but also has a conductive oxide (Go) interposed below the metal, and this CO prevents metal migration, and this CO also protects against laser light. Because it is translucent, the metal on its top surface generates heat from the irradiated laser light. .

The present invention meets this objective.

In addition, in the conventional example, the gap between the connecting parts is 3 m + II, for example, 20 cm x 60 cm with a middle of 15 mm (20
cm x 15 mm), there will be 33 stages of connections, and a total of 10 connections at the connecting part.
cm (area of 200 crA), and as a result, the effective area remained at 75% considering the peripheral area.

The present invention eliminates such process complexity and reduces the effective area to 86.
~97% For example, it can be increased to 92%.In addition, by making the connector CO and giving it more depth, the manufacturing yield can be increased from the conventional approximately 60% to 87%. An object of the present invention is to provide a photoelectric conversion device.

The details of the invention are shown below in accordance with the drawings.

FIG. 2 is a longitudinal sectional view showing the manufacturing process of the present invention.

In the drawings, a transparent substrate (1), for example, a glass plate (for example, J 0.6 to 2.2 mm, e.g. 1.2 mm, length [left-right direction in the drawings] 60 cm, middle 20 cm) was used.

Furthermore, a translucent conductive film, for example ■
TO (indium oxide tin oxide mixture, i.e. 10% by weight of tin oxide added in indium oxide ll5ii)
) (approximately 1500 people) → -5, n02 (200-400
A light-transmitting conductive film (1,500 to 2,000 layers) containing tin oxide as a main component or tin oxide doped with a halogen element was formed by a vacuum evaporation method, an LPCVD method, a plasma CVD method, or a spray method.

After that, a YAG laser processing machine (manufactured by Nippon Laser) is used to process the substrate from the bottom or top of the substrate with an output of 3 to 6 W (focal length: 4
A laser beam is irradiated from above with a spot diameter of 20 to 50 μΦ (typically 30 μΦ) controlled by a microcomputer, and the scan creates the first groove (13) for the scribe line. was formed, and the first electrode (2) was produced in each inter-element region (31), <11).

The open groove (13) formed by LS is rI] about 30μ
Each of the first electrodes was completely cut and separated by a length of 20 cm and a depth of 20 cm.

For this reason, as is clear in the drawing, a part of the substrate (1) was hollowed out to a depth of 300 to 1,300 people (recesses (6
0)).

Thus, the first element (31) and the second element (11
) is 15 to 30 mm, for example 15 mm.
And so.

Using the LS method described above, the transparent conductive film (CTF) (2) constituting the first electrode was cut and separated to form the first groove.

After this, plasma CVD method or Li1CVD method is applied to this upper surface.
A non-single crystal semiconductor layer having a PN or PIN junction (typically 0.5 μ
It was formed to a thickness of .

A typical example is a P-type semiconductor (S I MCI-X
0, 8 about 100 people) - ■ type amorphous or semi-amorphous silicon semiconductor (about 0.5μ) - N-type microcrystalline (about 200 people) a non-single crystal semiconductor having one PIN junction, Or P-type semiconductor (SixC+-x) Tandem type PTNr'IN having two PIN junctions and one PN junction made of I-type, N-type, P-type Si semiconductor -■-type 5ixGel- or semiconductor-N-type Si semiconductor , .

, , PIN junction semiconductor (3).

Such a non-single crystal semiconductor (3) was formed to have a uniform thickness over the entire surface.

Further, as shown in FIG. 2(B), the first open groove (1
3), a second open groove' (1B) was formed over the left side (first element female side) by the second LSI process.

In this drawing, the first and second open grooves (13), (18)
There is even a distance of 50μ between the centers of the two.

The irradiation with this laser light may be performed either from below the glass (1) or from above this substrate.

Thus, the second open groove (18) is +1u1 of the first electrode.
One side (8), <9) was exposed.

The side surface (9) of this second groove may be on the left side of the side surface (16) of the first electrode of the first element, and has a diameter of 10 to 100 μm.
It was shifted to the first electrode side. El]'f) It is characterized in that it is provided over the first electrode position of the first element.

As a typical example of this, as shown in FIG. 2(B), it may enter the interior (9) of the first electrode (37).

Furthermore, in the present invention, as shown in the conventional example, it is not necessarily necessary to expose the surface (14) of the first electrode (see FIG. 1); All of this CTF (37) in the depth direction was removed, and as a result, the side surface (8) was
), there is no practical problem even if the connector with the second electrode (38) is brought into close contact with the second electrode (38).

That is, it is extremely important in industrial application of the present invention to be able to provide manufacturing margins for the intensity of the output pulse of the laser beam and the depth of the groove.

In FIG. 2, as shown in FIG.
30) was formed, and a third open groove (20) for cutting and separation at the third LS was also obtained.

This second electrode (4) uses a conductive oxide film (Co>(45), which is a feature of the present invention. Its thickness is 500 to 150
It was formed to a thickness of 0.

As the CO, ITO (a mixture containing indium oxide and tin oxide as main components><451) was formed here.

It was also possible to form this CO with indium oxide as the main component. As a result, the semiconductor has a surface of 1% or less silver or silicon (typically 0.1 to 4g) in close contact with the semiconductor. Aluminum doped with 1% market weight was formed to a thickness of 300 to 3000 mm.

If the average thickness of the CO film was less than 500 Å, the metal on the top surface would come into direct contact with the metal due to local pinholes, which was not preferable. Further, at a thickness of 1500 Å or more, scribing becomes difficult due to vaporization due to laser irradiation, resulting in a decrease in yield. When the average film thickness of RM is less than 300 Å, the reflectivity of long wavelength light is impaired, which is not preferable. Moreover, at 3000 A or more, the heat generated by the laser beam irradiation is dissipated laterally, making it difficult for the open grooves to be dissipated by vaporization in both IIM and CO.
This also led to a decrease in yield. For this reason, CC0
The thickness of each of 1R is preferably 700 to 14
00 people, typically the average film thickness was 1050 people, and IBYl was preferably 500 to 2000 people, typically 1200 people.

Furthermore, it is effective to form nickel on the upper surface as an electrode for external connection and to prevent oxidation of aluminum.

For example, 1,050 people use ITO as CO, and 1,200 people use silver or aluminum. R at external extraction electrode
In order to prevent contact failure due to oxidation of M, nickel is added to a thickness of approximately 1000 mm, making the total metal thickness 30 mm.
This CO and I? M is for promoting reflection of long wavelength light on the back surface side and effectively photoelectrically converting long wavelength light of 600 to 800 nm.

Furthermore, nickel is applied to the external lead electrode (2) in the electrode part (5).
This is to improve the adhesion with 3).

These include CVD methods including electron beam evaporation methods or PCVD methods.
In order not to deteriorate the semiconductor layer using the D method, it was formed at a temperature of 300° C. or lower.

A transparent conductive film (CTF) is used as this CO, and ITO is particularly important in the present invention.

The effect is as follows: [1] The metal of the second electrode (46X, generally aluminum) does not form an alloy layer with silicon, and is abnormally diffused into the semiconductor (3) over a long period of time. This prevents it from becoming a show. i.e. 150-20
In order to improve the reliability of the high-temperature storage test at 0°C, the thickness of the RM is 300 to 3000 mm, and the CO between the metal and the semiconductor is 500 to 1500 mm thick. There is an intervention.

[2] Promote reflection of long-wavelength light that is not absorbed within the semiconductor (3) in the incident light (10) on the reflective gold IM (46), especially when the ITO thickness is 500 to 1500, preferably 700-1400 people, average thickness 1050
It increases the reflection of long-wavelength light of 600 to 800 nm and is effective in improving conversion efficiency by 1 to 2% compared to conventional methods.

[When forming the third open groove (20) of the three-layer present invention, the metal (46) is melted at a high temperature of 2000'C or higher, especially in the scribe region of the laser beam, and penetrates into the semiconductor (3). Leakage current between electrodes (39) and (38) is 10-1 person/c
m or more can be prevented from occurring.

Therefore, it is possible to prevent a decrease in manufacturing yield due to the formation of the third open groove.

[4] This CO also constitutes the connector, and is suitable for semiconductors, especially PI
This prevents the manufacturing yield and reliability of the connector portion from decreasing due to metal penetrating the oxide insulator (33) for the sensitive active layer of the N semiconductor.

[5] By forming CO that is compatible with the N-type semiconductor on the upper part of the semiconductor, that is, by providing CO whose main component is ITO or indium oxide in close proximity to the N-type semiconductor, the connection between this semiconductor and the electrode is established. It is possible to lower resistance and improve fill factor and conversion efficiency.

(When the upper part of the semiconductor is a P-type semiconductor, CO containing tin oxide or antimony oxide as the main component is preferable because it has good compatibility.) [6] A part of the element where the groove is formed becomes the second groove. Even if the connector part is made of CO, a part of it may mix into the semiconductor layer when forming the third groove and cause a short circuit between the two electrodes as in the case of metal. Without,
It is effective in improving manufacturing yield.

In the present invention, especially during LS, the third open groove is provided across the first element region (31) to reduce the distance between the electrodes (39) and (38) where the open circuit voltage of the first element is generated. 20 of laser diameter
~50μΦ, typically 30μΦ, spaced apart by about 30μ, and in addition, the crossing depth is as large as 25μ or more. That is, the center of the third open groove (20) is 20 to 150μ compared to the center of the second open groove (30).
Preferably, it is provided at a depth of 30 to 100 μm, typically 50 μm, over the first element side.

When shifted by this diagonal 30μφ laser beam,
The proper contact between the end of the GO (45) of the second electrode (39) of the first element and the end of the connector is within ±5μ of scan fluctuation.
Therefore, it can be as long as 60μ.

Therefore, the leakage during this period was less than 1/10 compared to other parts! It had a great feature in that it did not cause any problems in the V construction.

This shows the case where the second electrode is irradiated with a laser beam from above to be cut and separated to form an open groove (20).

This laser light slightly hollows out the semiconductor, particularly the 100 to 300 thin N or P type semiconductor layers that are in close contact with the lower surface of the second electrode. 11) The occurrence of crosstalk (leakage current) due to residual conductor or conductive semiconductor in the open grooves between the two was prevented.

In particular, this semiconductor (3) is a P-type semiconductor M (42), an I-type semiconductor N (43), and an N-type semiconductor layer (44), for example.
This N-type semiconductor layer has a microcrystalline or polycrystalline structure. When the so-called electrical conductivity is as high as 1 to 200 (Ωcm),
The N-type semiconductor layer of the present invention is hollowed out to make the recess (40) an intrinsic semiconductor, and in addition, no metal atom remains in the semiconductor, and furthermore, the semiconductor layer is made of an oxide insulator such as silicon oxide (34). Providing a film to prevent leakage current generation has been extremely effective in achieving high reliability.

Furthermore, for semi-defective devices (accounting for 5 to 10% of the total) with a leak rate of 10-5 to 10-' people/cm in terms of production yield, after this, a mixture of 1 part hydrofluoric acid, 3 parts nitric acid, 5 parts acetic acid, and 36 parts water was used. 5~
Through 10x etching, the silicon in the open groove is chemically etched by 50%.
It was effective to remove metal defects to a depth of 0 to 2,000 people.

It was preferable that this gouge go beyond the I-type semiconductor layer and not reach the CTF for the first electrode.

Thus, as shown in FIG. 2(C), a plurality of elements (
31), we were able to create a photoelectric conversion device in which (il) was directly connected at the connecting part.

FIG. 2(D) shows the attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film (21) with a film thickness of 500 nm was formed as a badge hasion film by plasma vapor phase method.
By uniformly forming the film to a thickness of ~2,000 yen, it further prevents leakage current between each element from occurring due to adsorption of moisture, etc.

Further, an external lead terminal (23) was provided at the peripheral portion (5).

These were filled with an organic resin (22) such as polyimide, polyamide, Kapton or Evoxo.

Thus, each element on a substrate (60 cm x 20 cm) as in this example was exposed to the irradiating light (10) by 14.
35+IIm connecting part rl] 150μ, external extraction electrode part thickness Qmm, peripheral part 4mm, substantially 580
It has 40 stages within mm x 192mm, and the effective area (1
92n++n x14.35mm 40 steps 1102cJ
That is, 91.8%) was able to be obtained.

As a result, the segment is 10.6% (“1.05cII
l), the panel has a conversion efficiency of 6.7% (theoretically it would be 9.7%, but the effective conversion efficiency decreased due to the resistance of the 40-stage connection) (8MI C1C10O/c
It was possible to have an output power of 73.8W at n+)). Furthermore, when this panel was subjected to a high temperature storage test at 150° C., after 1000 hours, a decrease of 10% or less was observed, for example, with 20 panels, the worst case was only 4% (X = 1.5%).

This was an astonishing value considering that when a reliability test was conducted under the same conditions using a conventional mask method, 17 panels failed to operate in 10 hours.

FIG. 3 is a longitudinal cross-sectional view and a plan view (end portion) showing the most typical positional relationship of the grooves that are formed during three LSI cycles.

The numbers and steps are the same as in FIG.

FIG. 3(A) shows the first open groove (13) and the first element (31).
), a second element (11), and a connecting portion (12).

As is clear from the drawing, the first groove (13) is located on the substrate (
1) is slightly hollowed out.

Further, a second opening m (18) is provided over the first electrode (2) side of the semiconductor (3) that constitutes the first element, and both of these are removed.

Therefore, the first electrode (2) of this first element (31)
and the second electrode of the second element (11) are connected to the connecting portion (12).
, at the side surface (8) of the first electrode (2) by a CO connector (30) extending from the second electrode (38) along the pad hasion membranes (33), (34). The two elements are electrically connected and connected in series.

Further in the drawing, a semiconductor (3) with at least one PN or PIN junction is shown, here one Six self-<
(0<x<1) P type - ■ type Si - Microcrystallized N type Si
A semiconductor forming one PIN junction consisting of (44) is provided.

This third open groove (20) is shifted to a depth of about 30μ toward the first element (31).

Therefore, the right end portion of the third opening 1ffi (20) is provided under the connector portion (30).

In this way, the second electrodes (4) of each of the first and second elements (31), (11) are electrically cut and separated, and the leakage between these electrodes is also reduced to 10=A/cm (1cm
(meaning the order of 10-'A per rl) or less.

This amount also has a manufacturing yield of 70-75% compared to the conventional example of 50%.
%, and was able to achieve extremely high productivity.

FIG. 3(B) shows a plan view, and at its end (lower side in the drawing) first, second and third open grooves (13), <18
>, (20) are provided.

In order to further reduce leakage in this direction, the semiconductor (3
) covers the first electrode (2) to reduce short circuits between the first and second electrodes.

In addition, at the end of the element, the first electrode (2), the semiconductor, and the second electrode (4) were scribed (50) at the same time by LS.

In this case as well, a badge hasion film is similarly formed on the side surface of the semiconductor.

In this drawing, during the first, second, and third opening grooves, 50~
20μ, with a typical 150-80μ inside the joint being 120μ.

The above YAG laser spot Pi has an output of 3 to 5 W.
(20μφ) 4 to 7W (30μφ), but by further reducing the spot diameter based on the technical concept, the area required for this connection part can be reduced, and the effective area (effective area) as a photoelectric conversion device can be further reduced. efficiency)
It has an inventive step in that it can further improve the

FIG. 4 is an enlarged view of the external lead-out electrode section when small photoelectric conversion devices, rather than large panels such as those for calculators, are to be mass-produced at the same time.

Figure 4 (A) is the second. Corresponding to the figure, the external lead electrode part (5) has a pad (49) that contacts the conductive rubber electrode (47), and this band (49) is connected to the second electrode (
upper electrode) <4).

At this time, even if the pressure on the electrode (47) is too strong and the pad (49) penetrates the first electrode (2) and semiconductor (3) below, the pad (49) and (2) should not be short-circuited. Open groove (1
3) is provided.

Further, the outer part is cut and separated by an open # (50) in which the first electrode, the semiconductor, and the second electrode are simultaneously scribed with one LS.

Furthermore, in FIG. 4(B), another pad (48) connected to the lower first electrode (2) is made of a second electrode material (18).
They are connected to each other.

Further, the band (48) is in contact with a conductive rubber electrode (46) and is electrically connected to the outside.

Here again, the pad (48) is electrically isolated from the adjacent photoelectric conversion device by the grooves (18), <20>, and <50>, and the glass cutting between these devices can be separated and cut in a post-process. Therefore, a large number of photoelectric conversion devices can be manufactured using one panel without using any alignment masks.

For example, 6cm on a 20cm x f30cm panel
If you try to make a photoelectric conversion device (for a calculator) with a diameter of 1.5 cm, you can see that you can make 130 calculator solar cells at once.

In other words, the photoelectric conversion device is covered with an organic resin mold (22) except for the electrode parts (5) and (45), and if a small power solar cell is to be made after this, it can be cut with a glass cutter.

Furthermore, by combining three or four panels in series within an aluminum sash frame, it is possible to provide a 120 cm x 40 cm high power panel of NEDO standard.

In addition, this NEDOffl-rated panel uses Seaflex to coat the fluorine-based protective film on the side opposite to the photoelectric conversion device of the present invention (
It is also effective to attach them together (on the upper side in the drawing) to increase mechanical strength against wind pressure, rain, etc.

In the present invention, glass is particularly used as the substrate among light-transmitting insulating substrates.

However, it is effective to use as this substrate a flexible organic resin or a composite substrate in which silicon oxide or silicon nitride is formed on an organic resin to a thickness of 0.1 to 2 .mu.m.

In particular, when this composite substrate is applied to the embodiments described above, it has a so-called blocking effect that prevents silicon oxide or silicon nitride from damaging the CTF on the upper surface and creating a mixture of the substrate and CTF. It was effective.

Further, the details of the present invention will be supplemented by describing examples below.

Example 1 This embodiment is illustrated according to the drawing in FIG.

That is, chemically strengthened glass with a thickness of 1.1 as a transparent substrate <1)
mm, length 60 cm, and medium 20 cm.

- A silicon oxide film was applied to the top surface to a thickness of 0.1 μm to form a blocking layer.

Furthermore, on top of that, CTF is added to ITO1600 SnO*3
00 was fabricated by electron beam evaporation.

Thereafter, a first open groove was formed using a YAG laser with a spot diameter of 30 μΦ and an output of 4 mm at a scanning speed of 5 m/min, controlled by a microcomputer.

In order to completely cut the CTF with this output, a ■-shaped groove with a width of about 2 μm and a depth of about 3000 mm was created in the center of the open groove by melting away the glass substrate.

The element region (31), <11) was 15 mm wide.

Thereafter, a non-single crystal semiconductor having one PIN junction shown in FIG. 2 was manufactured by a known PCVD method.

Its total thickness was approximately 0.5μ.

After that, the first open groove is monitored on a TV, and the first element (31) is shifted 50μ from there, and the spot diameter is 30μφ, the output is 5W, the temperature is 100℃ in the atmosphere, and the LS is used. No. 2 open grooves (18) were prepared as shown in FIG. 2(B).

Furthermore, ITO, which is CO, was made from this entire body by electron beam evaporation to an average thickness of 1050 mm, and a second electrode (4
5), the connector (30) was configured.

In addition, aluminum doped with 0.5 ffi of silicon was similarly formed to a thickness of 1200 mm by electron beam evaporation to form an RM.

Furthermore, the third open groove (20) is similarly placed in an oxidizing atmosphere.
S, the second open groove (18) is shifted to the first element (31) side to a depth of 50μ and is formed as shown in FIG.
) was obtained.

At this time, the depth of the third trench was about 3,000 semiconductors wide. Therefore, CC01R and the N-type semiconductor layer were completely removed.

The output of the laser beam was set to 3, and the other conditions were the same as those for the second production.

In this way, FIG. 2(C) was produced.

After the process shown in FIG. 2(C), the first electrode, the semiconductor, and the second electrode are all rectangularly scanned with a laser beam output of 6-4mm from the edge of the glass to form a rectangular shape. Prevents electrical short circuit with the frame.

Thereafter, a passivation film (21) was formed using a PCVD method to form a silicon nitride film to a thickness of 1000 mm at a temperature of 250°C.

As a result, we were able to create 40 stages of 15 mm wide elements on a 20 cm x 60 cm panel.

The effective efficiency of the panel has been improved (100mW/Cnt)
I was able to obtain a power output of 6.7% and a power output of 3.8W.

The effective area is 1102 cd, and the total panel area is 91.8
% could be used effectively.

Example 2 Substrate glass: thickness 1.1ml, size 20cm
X 60cm was used. Furthermore, a plurality of photoelectric conversion devices for calculators each measuring 5 cm x 1.5 cm were fabricated on the same substrate. 'Here, the element shape is 9mm x 13mm.
It was a 5-stage continuous array. The connecting portion was 100 μm in thickness, and the external electrode was provided in the structure shown in FIG. 4 (A>, <B).

As a result, I was able to easily make 160 calculator devices at once.

Tested with Fluorescent Ditch 2001x with an effective conversion efficiency of 4.5%.

As a result, we were able to successfully obtain a final production yield of 83%.

This can only be achieved by 40-50% using conventional methods,
Moreover, considering that the required area of the connecting portion was large and the effective conversion efficiency could only be obtained up to 3.2%, it was extremely effective.

The rest is the same as in Example 1.

Example 3 This example is Example 2, and the substrate was made of polyimide resin, which is a light-transmitting organic resin, and had a thickness of 150 μm.

Furthermore, as a blocking layer, silicon oxide of 0.22 μm was formed at a temperature of 250°C by the reaction of silane and carbon dioxide using plasma vapor phase method to prevent this organic resin from being damaged by LS. It was used as a blocking layer.

The rest is the same as in Example 2.

In this method, the cost of the substrate was 30 yen in Example 2, but this could be reduced to 2 yen/calculator element.

In addition, since each calculator element can be separated from the sheet by cutting or using scissors, it is extremely easy to process and is inexpensive.

Furthermore, when cutting this sheet, automatic cutting became possible using LS using strong pulsed light of 10 to 15 W.

In this example, as shown in FIG. 2(D), by overlapping the upper protective organic resin (22),
It has a structure in which a photoelectric conversion device is sandwiched between organic resin sheets, has flexibility, and can be mass-produced at extremely low cost.

In this example, the yield was 72% out of 160 units produced, with an effective conversion efficiency of 4.5% as the lower limit.

In FIGS. 2 to 4, light was incident from the lower light-transmitting insulating substrate.

However, the present invention does not limit the light incident side to the lower side.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of a conventional photoelectric conversion device. FIG. 2 is a longitudinal sectional view showing the manufacturing process of the photoelectric conversion device of the present invention. FIG. 3 is a longitudinal sectional view of the photoelectric conversion device of the present invention. FIG. 4 is a partially enlarged vertical sectional view of another photoelectric conversion device of the present invention. Patent Applicant 91 r H Bin 1 Co) (A) (
a>(A) Cr2
) Procedural amendment (method) % formula % 1. Indication of the case Patent Application No. 030479 of 1982 2. Name of the invention Method for manufacturing a photoelectric conversion device 3. Person making the amendment Relationship with the case Patent applicant 4. Order for amendment Date: May 11, 1980 (Shipping date: May 31, 1982)

Claims (1)

[Claims] 1. A step of forming a first light-transmitting conductive film constituting a first electrode on a light-transmitting substrate, and forming the first conductive film in a plurality of photoelectric conversion element regions. A step of cutting and separating using a laser beam to form a first groove, and forming a non-single crystal semiconductor layer covering the conductive film and the groove and capable of generating a photovoltaic force by light irradiation. a step of cutting and separating the non-single crystal semiconductor or the non-single crystal semiconductor and the first conductive film thereunder into a plurality of photoelectric conversion element regions using a laser beam;
a second conductive film is formed in close contact with the non-single crystal semiconductor on the side surface or the surface of the non-single crystal semiconductor and the first conductive film on the non-single crystal semiconductor surface and the cut surface; a step of forming a conductive oxide film and a reflective metal on the oxide layer; and a step of cutting and separating the second conductive film, or the conductive film and the non-single crystal semiconductor below the conductive film using a laser beam. and forming a third groove to form a plurality of photoelectric conversion elements, and the plurality of photoelectric conversion segments are electrically connected in series to each other and formed on the same insulating substrate. Characteristic photoelectric conversion device manufacturing method. 2. In claim 1, the conductive oxide film constituting the second electrode has a thickness of 500 to 1500 μm,
A method for manufacturing a photoelectric conversion device, characterized in that the reflective metal has aluminum or silver as a main component and has a thickness of 300 to 3000 mm.