JPS57104278A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS57104278A
JPS57104278A JP55181464A JP18146480A JPS57104278A JP S57104278 A JPS57104278 A JP S57104278A JP 55181464 A JP55181464 A JP 55181464A JP 18146480 A JP18146480 A JP 18146480A JP S57104278 A JPS57104278 A JP S57104278A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
light
substrate
semiconductor
light transmitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55181464A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55181464A priority Critical patent/JPS57104278A/en
Publication of JPS57104278A publication Critical patent/JPS57104278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase conversion efficiency by providing the surface and the rear of a photoelectric conversion element with a pair of light transmitting electrodes. CONSTITUTION:Light transmitting electrodes 16 and 19 consisting of the oxide of Sn, In or Sb are provided at the surface and the rear of an MIS type photoelectric conversion element (17, 18 are Si3N4 layers respectively) consisting of a nonmonocrystal semiconductor such as an amorphous semiconductor and a light transmitting substrate 15 of glass or the like is provided at one side of the electrode 16 and light 10 is irradiated at the electrode 16 through the substrate 15. In this way, photoelectric conversion is applied to light having higher Eg than that of a semiconductor and as weak infrared light or the like is emitted from the rear of the substrate, a rise in temperature will be prevented and a decrease in photoelectric conversion efficiency can be prevented.
JP55181464A 1980-12-22 1980-12-22 Photoelectric converting device Pending JPS57104278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181464A JPS57104278A (en) 1980-12-22 1980-12-22 Photoelectric converting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181464A JPS57104278A (en) 1980-12-22 1980-12-22 Photoelectric converting device

Publications (1)

Publication Number Publication Date
JPS57104278A true JPS57104278A (en) 1982-06-29

Family

ID=16101207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181464A Pending JPS57104278A (en) 1980-12-22 1980-12-22 Photoelectric converting device

Country Status (1)

Country Link
JP (1) JPS57104278A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144181A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS59144180A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS627170A (en) * 1985-06-04 1987-01-14 シーメンス　ソーラー　インダストリーズ，エル．ピー． Transparent photovoltaic module
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
JPS6296863U (en) * 1985-12-10 1987-06-20
JPS6298247U (en) * 1985-12-10 1987-06-23
JPS6366978A (en) * 1986-09-09 1988-03-25 Komatsu Ltd Solar energy hybrid panel
JPH0310558U (en) * 1989-06-16 1991-01-31
EP0637085A1 (en) * 1989-08-30 1995-02-01 Texas Instruments Incorporated Infrared detector and imager

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544793A (en) * 1978-09-25 1980-03-29 Rca Corp Amorphous silicon solar battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544793A (en) * 1978-09-25 1980-03-29 Rca Corp Amorphous silicon solar battery

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144181A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS59144180A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH0570311B2 (en) * 1983-02-22 1993-10-04 Handotai Energy Kenkyusho
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS627170A (en) * 1985-06-04 1987-01-14 シーメンス　ソーラー　インダストリーズ，エル．ピー． Transparent photovoltaic module
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
JPS6296863U (en) * 1985-12-10 1987-06-20
JPS6298247U (en) * 1985-12-10 1987-06-23
JPS6366978A (en) * 1986-09-09 1988-03-25 Komatsu Ltd Solar energy hybrid panel
JPH0310558U (en) * 1989-06-16 1991-01-31
EP0637085A1 (en) * 1989-08-30 1995-02-01 Texas Instruments Incorporated Infrared detector and imager

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