EP0155802A3 - Nonlinear and bistable optical device - Google Patents
Nonlinear and bistable optical device Download PDFInfo
- Publication number
- EP0155802A3 EP0155802A3 EP85301611A EP85301611A EP0155802A3 EP 0155802 A3 EP0155802 A3 EP 0155802A3 EP 85301611 A EP85301611 A EP 85301611A EP 85301611 A EP85301611 A EP 85301611A EP 0155802 A3 EP0155802 A3 EP 0155802A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- well region
- photocurrent
- means responsive
- nonlinear
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference using semi-conducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/028—Optical bistable devices based on self electro-optic effect devices [SEED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The invention is a nonlinear or bistable optical device
having a low switching energy. The invention uses a means
responsive to light for generating a photocurrent, a structure
having a semiconductor quantum well region, and means
responsive to the photocurrent for electrically controlling an
optical absorption of the semiconductor quantum well
region. The optical absorption of the semiconductor quan
tum well region varies in response to variations in the
photocurrent. A photodiode or phototransistor may be used
as the means responsive to light, and may be made integral
with the structure having the semiconductor quantum well
region. An array of devices may be fabricated on a single
chip for parallel logic processing.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US589556 | 1984-03-14 | ||
US06/589,556 US4546244A (en) | 1984-03-14 | 1984-03-14 | Nonlinear and bistable optical device |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0155802A2 EP0155802A2 (en) | 1985-09-25 |
EP0155802A3 true EP0155802A3 (en) | 1985-12-27 |
Family
ID=24358505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP85301611A Withdrawn EP0155802A3 (en) | 1984-03-14 | 1985-03-08 | Nonlinear and bistable optical device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4546244A (en) |
EP (1) | EP0155802A3 (en) |
CA (1) | CA1213965A (en) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2583480B2 (en) * | 1983-12-23 | 1997-02-19 | 株式会社日立製作所 | Optical switch and optical switch array |
US4764889A (en) * | 1984-12-19 | 1988-08-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical logic arrangement with self electro-optic effect devices |
US4703993A (en) * | 1984-12-19 | 1987-11-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method and apparatus for making a device for optically interconnecting optical devices |
US4705344A (en) * | 1984-12-19 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical interconnection arrangement |
US4764890A (en) * | 1984-12-19 | 1988-08-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical logic arrangement |
JPS61198212A (en) * | 1985-02-28 | 1986-09-02 | Tokyo Inst Of Technol | Optical circuit function element |
JPS63501528A (en) * | 1985-10-08 | 1988-06-09 | アメリカン テレフオン アンド テレグラフ カムパニ− | Nonlinear bistable optical device |
US4878723A (en) * | 1986-02-06 | 1989-11-07 | Gte Laboratories Incorporated | Optically controlled semiconductor waveguide interferometer apparatus |
GB8610129D0 (en) * | 1986-04-25 | 1986-05-29 | Secr Defence | Electro-optical device |
US4828368A (en) * | 1986-06-30 | 1989-05-09 | Hughes Aircraft Company | Near bandgap radiation modulation spatial light modulators |
JPS6377168A (en) * | 1986-09-19 | 1988-04-07 | Nec Corp | Composite optical bistable element |
US4761620A (en) * | 1986-12-03 | 1988-08-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical reading of quantum well device |
US4772854A (en) * | 1986-12-24 | 1988-09-20 | Bell Communications Research, Inc. | All optical repeater |
JPH0777273B2 (en) * | 1986-12-24 | 1995-08-16 | キヤノン株式会社 | Switching element and driving method thereof |
JPS63177109A (en) * | 1987-01-19 | 1988-07-21 | Hitachi Ltd | Optical element |
LU86777A1 (en) * | 1987-02-13 | 1988-03-02 | Europ Communities | LICHTMODULATOR AUF DER BASIS EINES NICHT-LINEAREN FABRY-PEROT-MEHRSCHICHTENINTERFERENZFILTERS |
US4751378B1 (en) * | 1987-04-24 | 2000-04-25 | Bell Telephone Labor Inc | Optical device with quantum well absorption |
US4754132A (en) * | 1987-04-24 | 1988-06-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Symmetric optical device with quantum well absorption |
US4749850A (en) * | 1987-04-27 | 1988-06-07 | American Telephone And Telegraph Company | High speed quantum well optical detector |
US4818523A (en) * | 1987-06-17 | 1989-04-04 | Colgate-Palmolive Company | Hair rinse conditioner |
US4947223A (en) * | 1987-08-31 | 1990-08-07 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor devices incorporating multilayer interference regions |
JPS6488518A (en) * | 1987-09-30 | 1989-04-03 | Hitachi Ltd | Semiconductor device for controlling beam of light |
US4848880A (en) * | 1987-11-13 | 1989-07-18 | Massachusetts Institute Of Technology | Spatial light modulator |
US5010517A (en) * | 1987-11-18 | 1991-04-23 | Hitachi, Ltd. | Semiconductor optical apparatus |
JP2634825B2 (en) * | 1987-11-20 | 1997-07-30 | シャープ株式会社 | Optical semiconductor device |
US4830444A (en) * | 1987-12-31 | 1989-05-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical switch |
US4800262A (en) * | 1987-12-31 | 1989-01-24 | American Telephone And Telegraph Company, At&T Bell Laboratories | Tri-state optical device with quantum well absorption |
US4822992A (en) * | 1987-12-31 | 1989-04-18 | American Telephone And Telegraph Company | Wavelength conversion using self electrooptic effect devices |
US4851840A (en) * | 1988-01-06 | 1989-07-25 | Wright State University | Optical analog to digital converter |
US5073981A (en) * | 1988-01-22 | 1991-12-17 | At&T Bell Laboratories | Optical communication by injection-locking to a signal which modulates an optical carrier |
GB2215072A (en) * | 1988-02-12 | 1989-09-13 | Philips Electronic Associated | A method of modulating an optical beam |
US5047822A (en) * | 1988-03-24 | 1991-09-10 | Martin Marietta Corporation | Electro-optic quantum well device |
US4884119A (en) * | 1988-04-22 | 1989-11-28 | American Telephone & Telegraph Company | Integrated multiple quantum well photonic and electronic devices |
JP2928532B2 (en) * | 1988-05-06 | 1999-08-03 | 株式会社日立製作所 | Quantum interference optical device |
US4917456A (en) * | 1988-07-15 | 1990-04-17 | At&T Bell Laboratories | Optical crossover network |
US4877952A (en) * | 1988-10-11 | 1989-10-31 | American Telephone And Telegraph Company | Faser cavity optical memory with optical storage and readout |
FR2640044B1 (en) * | 1988-12-06 | 1993-02-12 | Thomson Csf | OPTICAL RADIATION DETECTION DEVICE |
US4952791A (en) * | 1988-12-12 | 1990-08-28 | At&T Bell Laboratories | Monolithic apparatus comprising optically interconnected quantum well devices |
US4904859A (en) * | 1989-01-17 | 1990-02-27 | American Telephone And Telegraph Company | Self electrooptic effect device employing asymmetric quantum wells |
US4914286A (en) * | 1989-04-20 | 1990-04-03 | At&T Bell Laboratories | Method and apparatus for increasing the processing capacity of optical digital processing systems having optically bistable devices |
US4978842A (en) * | 1989-04-21 | 1990-12-18 | At&T Bell Laboratories | Programmable optical logic device with complementary inputs |
US4904858A (en) * | 1989-05-31 | 1990-02-27 | American Telephone And Telegraph Company | Programmable optical logic devices operable by measuring the ratio of optical data signal power to optical reference threshold power |
US4967068A (en) * | 1989-08-28 | 1990-10-30 | At&T Bell Laboratories | Single-ended optical logic arrangement |
US4959534A (en) * | 1989-08-28 | 1990-09-25 | At&T Bell Laboratories | Differential optical logic arrangement |
US5023944A (en) * | 1989-09-05 | 1991-06-11 | General Dynamics Corp./Electronics Division | Optical resonator structures |
US4999486A (en) * | 1989-09-29 | 1991-03-12 | The Boeing Company | Optoelectric logic array |
US5045681A (en) * | 1989-09-29 | 1991-09-03 | The Boeing Company | Optoelectric ripple carry adder |
US4999485A (en) * | 1989-10-18 | 1991-03-12 | At&T Bell Laboratories | Nonlinerar optical device structure with compound semiconductor having graded chemical composition |
DE3934998A1 (en) * | 1989-10-20 | 1991-04-25 | Standard Elektrik Lorenz Ag | ELECTRIC WAVELENGTH ADJUSTABLE SEMICONDUCTOR LASER |
FR2655433B1 (en) * | 1989-12-01 | 1992-06-26 | France Etat | ELECTRO-OPTICAL MODULATION METHOD AND DEVICE USING THE LOW ENERGY OBLIQUE TRANSITION OF A VERY TORQUE SUPER-NETWORK. |
US5095200A (en) * | 1990-01-19 | 1992-03-10 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic memory, logic, and interconnection device including an optical bistable circuit |
EP0443332B1 (en) * | 1990-01-23 | 1995-08-23 | Nippon Telegraph and Telephone Corporation | Optical gate array |
GB9011813D0 (en) * | 1990-05-25 | 1990-07-18 | British Telecomm | Fabry-perot modulator |
GB2245758B (en) * | 1990-06-29 | 1994-10-26 | Gen Electric Co Plc | A combined bipolar junction transistor and an optical modulator |
US5093565A (en) * | 1990-07-18 | 1992-03-03 | At&T Bell Laboratories | Apparatus for sequential optical systems where an independently controllable transmission gate is interposed between successive optoelectronic gates |
US5965899A (en) * | 1990-10-31 | 1999-10-12 | Lockheed Martin Corp. | Miniband transport quantum well detector |
US5126553A (en) * | 1990-11-28 | 1992-06-30 | Bell Communications Research, Inc. | Bistable optically switchable resonant-tunneling device and its use in signal processing |
US5222071A (en) * | 1991-02-21 | 1993-06-22 | Board Of Trustees Leland Stanford, Jr. University | Dynamic optical grating device |
US5238867A (en) * | 1991-07-09 | 1993-08-24 | Posco Educational Foundation | Method for preparing an optical switching device having multiple quantum wells |
US5210428A (en) * | 1991-11-01 | 1993-05-11 | At&T Bell Laboratories | Semiconductor device having shallow quantum well region |
US5233184A (en) * | 1991-12-27 | 1993-08-03 | At&T Bell Laboratories | Matrix addressed S-SEED optical modulator array |
FR2692374B1 (en) * | 1992-06-15 | 1994-07-29 | France Telecom | METHOD AND DEVICE FOR MODULATING AND AMPLIFYING LIGHT BEAMS. |
USH1911H (en) * | 1992-07-01 | 2000-11-07 | The United States Of America As Represented By The Secretary Of The Air Force | Curing optical material in a plane optical resonant cavity |
US5311008A (en) * | 1992-12-28 | 1994-05-10 | At&T Bell Laboratories | Self-electrooptic effect device for providing integer gain to input optical signals having series connected quantum well diodes |
US5288990A (en) * | 1992-12-28 | 1994-02-22 | At&T Bell Laboratories | Differential self-electrooptic effect device |
US5323019A (en) * | 1993-04-20 | 1994-06-21 | The United States Of America As Represented By The Secretary Of The Army | All optical multiple quantum well optical modulator |
US5543631A (en) * | 1993-06-17 | 1996-08-06 | Weinberger; Lester | Hybrid organic-inorganic bistable nonlinear optical gate |
US5376784A (en) * | 1993-06-17 | 1994-12-27 | Weinberger; Lester | Hybrid organic-inorganic bistable nonlinear optical device |
RU2111520C1 (en) * | 1993-07-21 | 1998-05-20 | Фирма "Самсунг Электроникс Ко., Лтд." | Optical processor with booster input |
JP3009562B2 (en) * | 1993-07-30 | 2000-02-14 | 三菱電機株式会社 | Optical switching device |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
GB2302597B (en) * | 1994-04-26 | 1998-12-02 | Ericsson Telefon Ab L M | Super lattice optical absorber |
US5623140A (en) * | 1994-11-15 | 1997-04-22 | Electronics And Telecommunications Research Institute | Nonbiased bistable optical device having a lower mirror having a plurality of reflective layers repeatedly formed on a substrate |
KR0148597B1 (en) * | 1994-11-23 | 1998-10-15 | 정선종 | Metal semiconductor junction schottky diode photonic device using strained layer structure |
US5608566A (en) * | 1995-08-11 | 1997-03-04 | The United States Of America As Represented By The Secretary Of The Army | Multi-directional electro-optic switch |
US5748653A (en) * | 1996-03-18 | 1998-05-05 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical cavity surface emitting lasers with optical gain control (V-logic) |
US6445839B1 (en) * | 1999-11-05 | 2002-09-03 | The Board Of Trustees Of The Leland Stanford Junior University | Optical wavelength-division-multiplexed cross-connect incorporating optically controlled optical switch |
US6459349B1 (en) | 2000-03-06 | 2002-10-01 | General Electric Company | Circuit breaker comprising a current transformer with a partial air gap |
US20040028357A1 (en) * | 2001-05-21 | 2004-02-12 | Pender Michael J. | Optical matrix photonic logic device and method for producing the same |
US6680791B2 (en) | 2001-10-01 | 2004-01-20 | The Board Of Trustees Of The Leland Stanford Junior University | Semiconductor device for rapid optical switch by modulated absorption |
US20040068651A1 (en) * | 2002-05-21 | 2004-04-08 | Pender Michael J. | Optical device for identifying friends and foes using real-time optical encryption and method for producing the same |
JP5360256B2 (en) * | 2012-03-30 | 2013-12-04 | 住友大阪セメント株式会社 | Optical waveguide device |
IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | Phototransistor device |
TR202019342A1 (en) * | 2020-11-30 | 2022-06-21 | Yildiz Teknik Ueniversitesi Doener Sermaye Isletme Mued | Electronically controlled dielectric huygens resonator spatial light modulator. |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3138212A1 (en) * | 1981-09-25 | 1983-04-28 | Kurt Dipl.-Phys. 4650 Gelsenkirchen Nattermann | Electrooptical cell |
GB2114768A (en) * | 1982-02-16 | 1983-08-24 | Western Electric Co | Bistable optical device |
-
1984
- 1984-03-14 US US06/589,556 patent/US4546244A/en not_active Ceased
-
1985
- 1985-03-08 EP EP85301611A patent/EP0155802A3/en not_active Withdrawn
- 1985-03-12 CA CA000476296A patent/CA1213965A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3138212A1 (en) * | 1981-09-25 | 1983-04-28 | Kurt Dipl.-Phys. 4650 Gelsenkirchen Nattermann | Electrooptical cell |
GB2114768A (en) * | 1982-02-16 | 1983-08-24 | Western Electric Co | Bistable optical device |
Non-Patent Citations (6)
Title |
---|
APPLIED PHYSICS LETTERS, vol. 40, no. 1, 1st January 1982, pages 38-40, American Institute of Physics, New York, US; F. CAPASSO et al.: "Enhancement of electron impact ionization in a superlattice: a new avalanche photodiode with a large ionization rate ratio" * |
APPLIED PHYSICS LETTERS, vol. 41, no. 3, 1st August 1982, pages 221-222, American Institute of Physics, New York, US; H.M. GIBBS et al.:"Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice etalon" * |
APPLIED PHYSICS LETTERS, vol. 42, no. 10, 15th May 1983, pages 864-866, American Institute of Physics, New York, US; D.S. CHEMLA et al.: "Elecroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures" * |
APPLIED PHYSICS LETTERS, vol. 44, no. 1, 1st January 1984, pages 16-18, American Institute of Physics, New York, US; T.H. WOOD et al.: "High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure" * |
APPLIED PHYSICS LETTERS, vol. 45, no. 1, 1st July 1984, pages 13-15, American Institute of Physics, New York, US; D.A.B. MILLER et al.: "Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device" * |
IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. QE-15, no. 12, December 1979, pages 1362-1369, IEEE, New York, US; D.M. PEPPER et al.: "Observation of mirrorless optical bistability and optical limiting using Stark tunable gases" * |
Also Published As
Publication number | Publication date |
---|---|
US4546244A (en) | 1985-10-08 |
CA1213965A (en) | 1986-11-12 |
EP0155802A2 (en) | 1985-09-25 |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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AK | Designated contracting states |
Designated state(s): IT |
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PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
Designated state(s): IT |
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17P | Request for examination filed |
Effective date: 19860529 |
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17Q | First examination report despatched |
Effective date: 19871104 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 19890203 |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MILLER, DAVID ANDREW BARCLAY |