JPS6449282A - Integrated circuit device with built-in photodiode - Google Patents

Integrated circuit device with built-in photodiode

Info

Publication number
JPS6449282A
JPS6449282A JP62206872A JP20687287A JPS6449282A JP S6449282 A JPS6449282 A JP S6449282A JP 62206872 A JP62206872 A JP 62206872A JP 20687287 A JP20687287 A JP 20687287A JP S6449282 A JPS6449282 A JP S6449282A
Authority
JP
Japan
Prior art keywords
photodiode
deposited
film
built
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62206872A
Other languages
Japanese (ja)
Inventor
Masakazu Nakabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62206872A priority Critical patent/JPS6449282A/en
Publication of JPS6449282A publication Critical patent/JPS6449282A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the multiple reflection and to obtain a highly reliable integrated circuit device with a built-in photodiode by a method wherein an antireflection film is deposited on the photodiode part and its upper part is sealed directly by a transparent resin. CONSTITUTION:A thermal nitride film 10 acting as an antireflection film is deposited on an (n) epitaxial layer 3 in a photodiode part with a prescribed film thickness, e.g. with a thickness of lambda/(4nr)approx.=700Angstrom (where nr is a refractive index of the thermal nitride film). If the thermal nitride film 10 is deposited in this manner, the refractive index becomes large as the incident light progresses; accordingly, the light is hardly reflected. By this setup, it is possible to make an irregularity in a transfer function very small. In addition, if the photodiode part is constituted to be a Schottky type, a platinum layer may be used as the antireflection film.
JP62206872A 1987-08-19 1987-08-19 Integrated circuit device with built-in photodiode Pending JPS6449282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206872A JPS6449282A (en) 1987-08-19 1987-08-19 Integrated circuit device with built-in photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206872A JPS6449282A (en) 1987-08-19 1987-08-19 Integrated circuit device with built-in photodiode

Publications (1)

Publication Number Publication Date
JPS6449282A true JPS6449282A (en) 1989-02-23

Family

ID=16530436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206872A Pending JPS6449282A (en) 1987-08-19 1987-08-19 Integrated circuit device with built-in photodiode

Country Status (1)

Country Link
JP (1) JPS6449282A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180269A (en) * 1990-11-14 1992-06-26 Sharp Corp Antireflection film of photodetector
JPH04271173A (en) * 1991-02-27 1992-09-28 Sanyo Electric Co Ltd Optical semiconductor device
US5258630A (en) * 1991-01-17 1993-11-02 Eastman Kodak Company Light-emitting diode with non-reflective diffusion region periphery
DE10239643B3 (en) * 2002-08-29 2004-06-17 X-Fab Semiconductor Foundries Ag Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit
DE10239642B3 (en) * 2002-08-29 2004-06-24 X-Fab Semiconductor Foundries Ag Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180269A (en) * 1990-11-14 1992-06-26 Sharp Corp Antireflection film of photodetector
US5258630A (en) * 1991-01-17 1993-11-02 Eastman Kodak Company Light-emitting diode with non-reflective diffusion region periphery
JPH04271173A (en) * 1991-02-27 1992-09-28 Sanyo Electric Co Ltd Optical semiconductor device
DE10239643B3 (en) * 2002-08-29 2004-06-17 X-Fab Semiconductor Foundries Ag Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit
DE10239642B3 (en) * 2002-08-29 2004-06-24 X-Fab Semiconductor Foundries Ag Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit

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