JPS5774720A - Optoelectronic element - Google Patents
Optoelectronic elementInfo
- Publication number
- JPS5774720A JPS5774720A JP15184380A JP15184380A JPS5774720A JP S5774720 A JPS5774720 A JP S5774720A JP 15184380 A JP15184380 A JP 15184380A JP 15184380 A JP15184380 A JP 15184380A JP S5774720 A JPS5774720 A JP S5774720A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- face
- forming
- film
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To eliminate the need for laborious individual assembling adjustment work and make mass production of titled elements inexpensively by sticking and forming an optoelectrically active film on the end face of a distributed index lens, providing an electrode thereon and forming the lens and function elements into one piece. CONSTITUTION:This element is formed by sticking and forming a transparent conductive film 5 of indium oxide or the like over the entire surface on one end face 4A of a distributed index lens 4 taking length L suitably and superposedly forming active thin films 6 consisting of P type and N type silicon films 6A, 6B of a small area cylindrical shape centering at the axial line 4C of the lens thereon. Further an electrode film 7 is provided thereon and lead wires 8, 8 are connected to the film 5 and an electrode film 7. With such element, the luminous flux 9 making diffusion incidence to one end face 4B of the lens 4 is condensed at the other end face 4A, and is made incident to the films 6, from which it is taken out as an electric signal. It is also possible to use the element of the similar constitution as an electroluminescence device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15184380A JPS5774720A (en) | 1980-10-29 | 1980-10-29 | Optoelectronic element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15184380A JPS5774720A (en) | 1980-10-29 | 1980-10-29 | Optoelectronic element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5774720A true JPS5774720A (en) | 1982-05-11 |
Family
ID=15527491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15184380A Pending JPS5774720A (en) | 1980-10-29 | 1980-10-29 | Optoelectronic element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5774720A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0154962A2 (en) * | 1984-03-12 | 1985-09-18 | Hitachi, Ltd. | Image sensor |
EP0895293A3 (en) * | 1993-11-02 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an aggregate of semiconductor micro-needles |
WO2002060017A1 (en) * | 2001-01-26 | 2002-08-01 | Nikon Corporation | Terahertz light generating element, terahertz light generating device and terahertz light detection device |
JP2002223017A (en) * | 2001-01-26 | 2002-08-09 | Tochigi Nikon Corp | Tera-hertz optical device, and apparatus for generating tera-hertz light and apparatus for detecting tera-hertz light using the same |
US6734451B2 (en) | 1993-11-02 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
JP2014013941A (en) * | 2000-09-12 | 2014-01-23 | Philips Lumileds Lightng Co Llc | Light emitting diodes with improved light extraction efficiency |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5046344A (en) * | 1973-08-29 | 1975-04-25 |
-
1980
- 1980-10-29 JP JP15184380A patent/JPS5774720A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5046344A (en) * | 1973-08-29 | 1975-04-25 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0154962A2 (en) * | 1984-03-12 | 1985-09-18 | Hitachi, Ltd. | Image sensor |
US4689652A (en) * | 1984-03-12 | 1987-08-25 | Hitachi, Ltd. | Image sensor |
US6177291B1 (en) | 1993-11-02 | 2001-01-23 | Matsushita Electric Industrial Co., Ltd. | Method of making aggregate of semiconductor micro-needles |
EP0893834A3 (en) * | 1993-11-02 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd | Semiconductor device comprising an aggregate of semiconductor micro-needles |
EP0892444A3 (en) * | 1993-11-02 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd | Semiconductor device comprising an aggregate of semiconductor micro-needles |
US6087197A (en) * | 1993-11-02 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
EP0895293A3 (en) * | 1993-11-02 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an aggregate of semiconductor micro-needles |
US6489629B1 (en) | 1993-11-02 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
US6734451B2 (en) | 1993-11-02 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
JP2014013941A (en) * | 2000-09-12 | 2014-01-23 | Philips Lumileds Lightng Co Llc | Light emitting diodes with improved light extraction efficiency |
US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
WO2002060017A1 (en) * | 2001-01-26 | 2002-08-01 | Nikon Corporation | Terahertz light generating element, terahertz light generating device and terahertz light detection device |
JP2002223017A (en) * | 2001-01-26 | 2002-08-09 | Tochigi Nikon Corp | Tera-hertz optical device, and apparatus for generating tera-hertz light and apparatus for detecting tera-hertz light using the same |
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