JPS574180A - Light-emitting element in gallium nitride - Google Patents

Light-emitting element in gallium nitride

Info

Publication number
JPS574180A
JPS574180A JP7752680A JP7752680A JPS574180A JP S574180 A JPS574180 A JP S574180A JP 7752680 A JP7752680 A JP 7752680A JP 7752680 A JP7752680 A JP 7752680A JP S574180 A JPS574180 A JP S574180A
Authority
JP
Japan
Prior art keywords
light
gallium nitride
substrate
emitted
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7752680A
Other languages
Japanese (ja)
Inventor
Isamu Akasaki
Atsuyuki Kobayashi
Yoshimasa Oki
Yukio Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7752680A priority Critical patent/JPS574180A/en
Publication of JPS574180A publication Critical patent/JPS574180A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

PURPOSE:To emit large optical output in one direction by mounting the light- emitting element in gallium nitride covered with a film opaque to luminescence on the surface at the substrate side. CONSTITUTION:When positive voltage is applied to a lead 5 and negative voltage to a lead 6, luminsecence is generated in a region in a thin-film 2 in gallium nitride contacting with a light-emitting electrode 3, and the light 8 is emitted through the transpacent sapphire substrate 1. Since the surface 1' of the substrate 1 is covered with the opaque film 10 here, the light generated in the light-emitting region is not emitted from the substrate 1' side, and the light 8 is emitted from a side surface 11, an area thereof is by far small. Accordingly, optical input to an optical fiber can be made extremely larger than normal elements when the optical fiber is bonded to one side surface of the element.
JP7752680A 1980-06-09 1980-06-09 Light-emitting element in gallium nitride Pending JPS574180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7752680A JPS574180A (en) 1980-06-09 1980-06-09 Light-emitting element in gallium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7752680A JPS574180A (en) 1980-06-09 1980-06-09 Light-emitting element in gallium nitride

Publications (1)

Publication Number Publication Date
JPS574180A true JPS574180A (en) 1982-01-09

Family

ID=13636411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7752680A Pending JPS574180A (en) 1980-06-09 1980-06-09 Light-emitting element in gallium nitride

Country Status (1)

Country Link
JP (1) JPS574180A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129658A (en) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emission device
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
WO2004112154A1 (en) * 2003-06-13 2004-12-23 Rohm Co., Ltd. Process for producing light-emitting diode element emitting white light
US6894317B2 (en) 2001-06-11 2005-05-17 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
JP2005159035A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Light emitting diode and light emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129658A (en) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emission device
JP2666228B2 (en) * 1991-10-30 1997-10-22 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
US6894317B2 (en) 2001-06-11 2005-05-17 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
WO2004112154A1 (en) * 2003-06-13 2004-12-23 Rohm Co., Ltd. Process for producing light-emitting diode element emitting white light
CN100411203C (en) * 2003-06-13 2008-08-13 罗姆股份有限公司 Process for producing light-emitting diode element emitting white light
US7759145B2 (en) 2003-06-13 2010-07-20 Rohm Co., Ltd. Process for producing light-emitting diode element emitting white light
JP2005159035A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Light emitting diode and light emitting device

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