JPS5768087A - Photocoupling semiconductor device - Google Patents

Photocoupling semiconductor device

Info

Publication number
JPS5768087A
JPS5768087A JP14383380A JP14383380A JPS5768087A JP S5768087 A JPS5768087 A JP S5768087A JP 14383380 A JP14383380 A JP 14383380A JP 14383380 A JP14383380 A JP 14383380A JP S5768087 A JPS5768087 A JP S5768087A
Authority
JP
Japan
Prior art keywords
photocoupling
lead frame
semiconductor device
light
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14383380A
Other languages
Japanese (ja)
Inventor
Yoichi Emura
Yukio Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14383380A priority Critical patent/JPS5768087A/en
Publication of JPS5768087A publication Critical patent/JPS5768087A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To improve the light transmission efficiency of a photocoupling semiconductor device by forming the light emitting element carrying surface of a lead frame in recess state on the part facing a photodetecting semiconductor element. CONSTITUTION:The lead frame 103 carrying a light emitting element 101 is forme in shape in parabolic shape, the light is condensed and is emitted to the photodetector 102 on the lead frame 104. Thus, the current transmission ratio of the photocoupler can be improved.
JP14383380A 1980-10-15 1980-10-15 Photocoupling semiconductor device Pending JPS5768087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14383380A JPS5768087A (en) 1980-10-15 1980-10-15 Photocoupling semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14383380A JPS5768087A (en) 1980-10-15 1980-10-15 Photocoupling semiconductor device

Publications (1)

Publication Number Publication Date
JPS5768087A true JPS5768087A (en) 1982-04-26

Family

ID=15348000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14383380A Pending JPS5768087A (en) 1980-10-15 1980-10-15 Photocoupling semiconductor device

Country Status (1)

Country Link
JP (1) JPS5768087A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185168U (en) * 1984-11-08 1986-06-04
US5032879A (en) * 1989-07-27 1991-07-16 International Business Machines Corporation Integrated semiconductor diode laser and photodiode structure
US5266946A (en) * 1990-02-09 1993-11-30 Valeo Neiman Remote control system, in particular for locking and unlocking the doors of motor vehicles with two axially offset light emitters

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185168U (en) * 1984-11-08 1986-06-04
US5032879A (en) * 1989-07-27 1991-07-16 International Business Machines Corporation Integrated semiconductor diode laser and photodiode structure
US5266946A (en) * 1990-02-09 1993-11-30 Valeo Neiman Remote control system, in particular for locking and unlocking the doors of motor vehicles with two axially offset light emitters

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