JPS5779685A - Light emitting diode device - Google Patents
Light emitting diode deviceInfo
- Publication number
- JPS5779685A JPS5779685A JP15543480A JP15543480A JPS5779685A JP S5779685 A JPS5779685 A JP S5779685A JP 15543480 A JP15543480 A JP 15543480A JP 15543480 A JP15543480 A JP 15543480A JP S5779685 A JPS5779685 A JP S5779685A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- diode device
- films
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain stable performance and reliable operation by a method wherein films are provided on etched planes to isolate a P-N junction from the air. CONSTITUTION:The array of mesa-shaped light emitting diodes 13 is formed on a substrate 1 in a light emitting diode device 12. The side of each light emitting diode 13, namely, etched planes are coated by films 10. Therefore, a P-N junction formed between a one conductivity layer 2 and a reverse conductivity-type layer 3 is not exposed to the outside. So performance is stabilized. An upper electrode 6 and a lower electrode 7 are formed on each light emitting diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15543480A JPS5779685A (en) | 1980-11-05 | 1980-11-05 | Light emitting diode device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15543480A JPS5779685A (en) | 1980-11-05 | 1980-11-05 | Light emitting diode device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5779685A true JPS5779685A (en) | 1982-05-18 |
Family
ID=15605933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15543480A Pending JPS5779685A (en) | 1980-11-05 | 1980-11-05 | Light emitting diode device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5779685A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6220383A (en) * | 1985-07-18 | 1987-01-28 | Nec Corp | Compound semiconductor device |
JPH01187838A (en) * | 1988-01-22 | 1989-07-27 | Hitachi Ltd | Semiconductor device |
EP1646092A3 (en) * | 2004-10-06 | 2006-12-06 | LumiLeds Lighting U.S., LLC | Contact and omni directional reflective mirror for flip chipped light emitting devices |
-
1980
- 1980-11-05 JP JP15543480A patent/JPS5779685A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6220383A (en) * | 1985-07-18 | 1987-01-28 | Nec Corp | Compound semiconductor device |
JPH01187838A (en) * | 1988-01-22 | 1989-07-27 | Hitachi Ltd | Semiconductor device |
EP1646092A3 (en) * | 2004-10-06 | 2006-12-06 | LumiLeds Lighting U.S., LLC | Contact and omni directional reflective mirror for flip chipped light emitting devices |
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