JPS5650586A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5650586A
JPS5650586A JP12752979A JP12752979A JPS5650586A JP S5650586 A JPS5650586 A JP S5650586A JP 12752979 A JP12752979 A JP 12752979A JP 12752979 A JP12752979 A JP 12752979A JP S5650586 A JPS5650586 A JP S5650586A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
exposed portion
junction
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12752979A
Other languages
Japanese (ja)
Inventor
Shigeru Kitabi
Yoshiaki Hisamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12752979A priority Critical patent/JPS5650586A/en
Publication of JPS5650586A publication Critical patent/JPS5650586A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve the light emitting efficiency of a light emitting diode by forming the periphery of a P-N junction exposed portion in uneven shape and thereby increasing the exposed length thereof. CONSTITUTION:A P type layer 3 is formed on an N type substrate 1, a P-N junction is thus formed therebetween in a light emitting diode, etched grooves 6 are formed thereon, and a P-N junction exposed portion is formed thereon, The periphery of the exposed portion is formed unevenly, and the exposed portion is increased in length. Thus, the light emitting efficiency of the light emitting diode can be improved.
JP12752979A 1979-10-01 1979-10-01 Light emitting diode Pending JPS5650586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12752979A JPS5650586A (en) 1979-10-01 1979-10-01 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12752979A JPS5650586A (en) 1979-10-01 1979-10-01 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS5650586A true JPS5650586A (en) 1981-05-07

Family

ID=14962265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12752979A Pending JPS5650586A (en) 1979-10-01 1979-10-01 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5650586A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005358A1 (en) * 2000-07-10 2002-01-17 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
JP2005303286A (en) * 2004-03-19 2005-10-27 Showa Denko Kk Compound semiconductor light emitting element and its manufacturing method
JP2013125968A (en) * 2011-12-13 2013-06-24 Lg Innotek Co Ltd Ultraviolet light emitting device
EP2709171A3 (en) * 2012-09-18 2016-04-06 Stanley Electric Co., Ltd. LED array

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005358A1 (en) * 2000-07-10 2002-01-17 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
US6946687B2 (en) 2000-07-10 2005-09-20 Osram Gmbh Radiation-emitting semiconductor chip with a radiation-emitting active layer
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
EP1263058A3 (en) * 2001-05-29 2004-10-27 Toyoda Gosei Co., Ltd. Light-emitting element
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
EP1596443A1 (en) * 2001-05-29 2005-11-16 Toyoda Gosei Co., Ltd. Light-emitting element
JP2005303286A (en) * 2004-03-19 2005-10-27 Showa Denko Kk Compound semiconductor light emitting element and its manufacturing method
JP4540514B2 (en) * 2004-03-19 2010-09-08 昭和電工株式会社 Compound semiconductor light emitting device and manufacturing method thereof
JP2013125968A (en) * 2011-12-13 2013-06-24 Lg Innotek Co Ltd Ultraviolet light emitting device
US9786814B2 (en) 2011-12-13 2017-10-10 Lg Innotek Co., Ltd. Ultraviolet light emitting device
EP2709171A3 (en) * 2012-09-18 2016-04-06 Stanley Electric Co., Ltd. LED array

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