JPS51120675A - Double diffusion type diode - Google Patents

Double diffusion type diode

Info

Publication number
JPS51120675A
JPS51120675A JP4606975A JP4606975A JPS51120675A JP S51120675 A JPS51120675 A JP S51120675A JP 4606975 A JP4606975 A JP 4606975A JP 4606975 A JP4606975 A JP 4606975A JP S51120675 A JPS51120675 A JP S51120675A
Authority
JP
Japan
Prior art keywords
type diode
diffusion type
double diffusion
region
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4606975A
Other languages
Japanese (ja)
Inventor
Yoshio Akita
Tetsuo Fujii
Osamu Ina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP4606975A priority Critical patent/JPS51120675A/en
Publication of JPS51120675A publication Critical patent/JPS51120675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:In the manufacture of diodes with low reverse breakdown voltage, a P<+> region is surrounded and a more shallow n<+> is structured after forming a P<+> region on a p-channel substrate. A junction to determine a breakdown voltage is formed in a position deeper than the surface to obtain stable characteristics.
JP4606975A 1975-04-16 1975-04-16 Double diffusion type diode Pending JPS51120675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4606975A JPS51120675A (en) 1975-04-16 1975-04-16 Double diffusion type diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4606975A JPS51120675A (en) 1975-04-16 1975-04-16 Double diffusion type diode

Publications (1)

Publication Number Publication Date
JPS51120675A true JPS51120675A (en) 1976-10-22

Family

ID=12736699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4606975A Pending JPS51120675A (en) 1975-04-16 1975-04-16 Double diffusion type diode

Country Status (1)

Country Link
JP (1) JPS51120675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02133969A (en) * 1988-11-14 1990-05-23 Fuji Electric Co Ltd Zener diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02133969A (en) * 1988-11-14 1990-05-23 Fuji Electric Co Ltd Zener diode

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