JPS55148469A - Semiconductor rectifier diode - Google Patents

Semiconductor rectifier diode

Info

Publication number
JPS55148469A
JPS55148469A JP5560179A JP5560179A JPS55148469A JP S55148469 A JPS55148469 A JP S55148469A JP 5560179 A JP5560179 A JP 5560179A JP 5560179 A JP5560179 A JP 5560179A JP S55148469 A JPS55148469 A JP S55148469A
Authority
JP
Japan
Prior art keywords
layer
rectifier diode
semiconductor
semiconductor rectifier
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5560179A
Other languages
Japanese (ja)
Other versions
JPS5949712B2 (en
Inventor
Yoshihito Amamiya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5560179A priority Critical patent/JPS5949712B2/en
Priority to GB8006652A priority patent/GB2050694B/en
Priority to NLAANVRAGE8001226,A priority patent/NL188434C/en
Priority to DE19803008034 priority patent/DE3008034A1/en
Priority to FR8004965A priority patent/FR2456389B1/en
Priority to CA000347000A priority patent/CA1150417A/en
Publication of JPS55148469A publication Critical patent/JPS55148469A/en
Priority to US06/512,942 priority patent/US4587547A/en
Publication of JPS5949712B2 publication Critical patent/JPS5949712B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To alleviate the limit of high speed operation in a semiconductor rectifier diode by forming a reverse conducting type semiconductor region in a one conducting type semiconductor layer. CONSTITUTION:An electrode 5 is ohmically contacted from opposite side to the side of a semiconductor layer 2 in a semiconductor layer 3, and there is formed an n-type semiconductor region 8 having higher impurity density than the layer 2 with the depth not reaching the layer 2. In this manner, the carrier amount stored in the layer 2 is reduced to alleviate the limit of high speed operation as a semiconductor rectifier diode.
JP5560179A 1979-05-07 1979-05-07 semiconductor rectifier diode Expired JPS5949712B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP5560179A JPS5949712B2 (en) 1979-05-07 1979-05-07 semiconductor rectifier diode
GB8006652A GB2050694B (en) 1979-05-07 1980-02-27 Electrode structure for a semiconductor device
NLAANVRAGE8001226,A NL188434C (en) 1979-05-07 1980-02-29 ELECTRODESTRUCTURE.
DE19803008034 DE3008034A1 (en) 1979-05-07 1980-03-03 ELECTRODE DEVICE FOR A SEMICONDUCTOR DEVICE
FR8004965A FR2456389B1 (en) 1979-05-07 1980-03-05 ELECTRODES STRUCTURE FOR SEMICONDUCTOR DEVICES
CA000347000A CA1150417A (en) 1979-05-07 1980-03-05 Electrode structure for a semiconductor device
US06/512,942 US4587547A (en) 1979-05-07 1983-07-12 Electrode structure for a semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5560179A JPS5949712B2 (en) 1979-05-07 1979-05-07 semiconductor rectifier diode

Publications (2)

Publication Number Publication Date
JPS55148469A true JPS55148469A (en) 1980-11-19
JPS5949712B2 JPS5949712B2 (en) 1984-12-04

Family

ID=13003290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5560179A Expired JPS5949712B2 (en) 1979-05-07 1979-05-07 semiconductor rectifier diode

Country Status (1)

Country Link
JP (1) JPS5949712B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204717B1 (en) * 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163409U (en) * 1984-09-30 1986-04-30
JPH0318692Y2 (en) * 1984-11-12 1991-04-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204717B1 (en) * 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
US6414370B1 (en) 1995-05-22 2002-07-02 Hitachi, Ltd. Semiconductor circuit preventing electromagnetic noise

Also Published As

Publication number Publication date
JPS5949712B2 (en) 1984-12-04

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