JPS538574A - Lateral thyristor - Google Patents

Lateral thyristor

Info

Publication number
JPS538574A
JPS538574A JP8322076A JP8322076A JPS538574A JP S538574 A JPS538574 A JP S538574A JP 8322076 A JP8322076 A JP 8322076A JP 8322076 A JP8322076 A JP 8322076A JP S538574 A JPS538574 A JP S538574A
Authority
JP
Japan
Prior art keywords
lateral thyristor
emitter
lowering
substrate
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8322076A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Yoshiaki Hisamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8322076A priority Critical patent/JPS538574A/en
Publication of JPS538574A publication Critical patent/JPS538574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the lowering of the carrier shifting performance and thus to obtain a high gate sensitivity by providing a impurity region of high relative resistance near the main surface within the substrate between the emitter and base with a flow of the main current.
JP8322076A 1976-07-12 1976-07-12 Lateral thyristor Pending JPS538574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8322076A JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8322076A JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Publications (1)

Publication Number Publication Date
JPS538574A true JPS538574A (en) 1978-01-26

Family

ID=13796220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8322076A Pending JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Country Status (1)

Country Link
JP (1) JPS538574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11084626B2 (en) 2015-02-27 2021-08-10 Graphie Packaging International, LLC Method of forming a container
US11472592B2 (en) 2006-03-10 2022-10-18 Graphic Packaging International, Llc Injection-molded composite construct

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11472592B2 (en) 2006-03-10 2022-10-18 Graphic Packaging International, Llc Injection-molded composite construct
US11084626B2 (en) 2015-02-27 2021-08-10 Graphie Packaging International, LLC Method of forming a container

Similar Documents

Publication Publication Date Title
JPS51128269A (en) Semiconductor unit
JPS538574A (en) Lateral thyristor
JPS5413275A (en) Controlled rectifying element of semiconductor
JPS5366384A (en) Thyristor
JPS57196569A (en) Bidirectional thyristor
JPS5275278A (en) Semiconductor device
JPS52129380A (en) Semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5667970A (en) Gate turn-off thyristor
JPS5538080A (en) Semiconductor device
JPS51127685A (en) Lateral-type semiconductor device
JPS5710968A (en) Semiconductor device
JPS5289473A (en) Transistor
JPS53125774A (en) Bipolar transistor and its manufacture
JPS53127271A (en) Semiconductor device
JPS5467383A (en) Semiconductor device
JPS5298480A (en) Semiconductor device
JPS5637677A (en) Silicon planar type thyristor
JPS51123071A (en) Fabrication technique of semiconductor device
JPS56104465A (en) Semiconductor device
JPS5326685A (en) Sem iconductor device containing ill elemnent and its manufacture
JPS54100675A (en) Three-terminal two-way thyristor
JPS538576A (en) Lateral thyristor
JPS5311584A (en) Semiconductor device
JPS57124471A (en) Transistor