JPS538576A - Lateral thyristor - Google Patents

Lateral thyristor

Info

Publication number
JPS538576A
JPS538576A JP8322276A JP8322276A JPS538576A JP S538576 A JPS538576 A JP S538576A JP 8322276 A JP8322276 A JP 8322276A JP 8322276 A JP8322276 A JP 8322276A JP S538576 A JPS538576 A JP S538576A
Authority
JP
Japan
Prior art keywords
increase
base region
lateral thyristor
sensitivity
become
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8322276A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Yoshiaki Hisamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8322276A priority Critical patent/JPS538576A/en
Publication of JPS538576A publication Critical patent/JPS538576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase the sensitivity and to increase the variable range of the anode current at the crossover time by providing a poly crystal semiconductor layer via an insulation film on the semiconductor substrate between the 1st impurity region to become the base region and by performing the carrier injection concentrically near the surface of the base region.
JP8322276A 1976-07-12 1976-07-12 Lateral thyristor Pending JPS538576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8322276A JPS538576A (en) 1976-07-12 1976-07-12 Lateral thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8322276A JPS538576A (en) 1976-07-12 1976-07-12 Lateral thyristor

Publications (1)

Publication Number Publication Date
JPS538576A true JPS538576A (en) 1978-01-26

Family

ID=13796276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8322276A Pending JPS538576A (en) 1976-07-12 1976-07-12 Lateral thyristor

Country Status (1)

Country Link
JP (1) JPS538576A (en)

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