JPS5210081A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
JPS5210081A
JPS5210081A JP8655075A JP8655075A JPS5210081A JP S5210081 A JPS5210081 A JP S5210081A JP 8655075 A JP8655075 A JP 8655075A JP 8655075 A JP8655075 A JP 8655075A JP S5210081 A JPS5210081 A JP S5210081A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing semiconductor
semiconductor substrate
epitaxial layer
improve characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8655075A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Kenji Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP8655075A priority Critical patent/JPS5210081A/en
Publication of JPS5210081A publication Critical patent/JPS5210081A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve characteristics of an element by preventing doping of harmful impurity from a semiconductor substrate of high impurity density to an epitaxial layer.
JP8655075A 1975-07-14 1975-07-14 Method for manufacturing semiconductor device Pending JPS5210081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8655075A JPS5210081A (en) 1975-07-14 1975-07-14 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8655075A JPS5210081A (en) 1975-07-14 1975-07-14 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5210081A true JPS5210081A (en) 1977-01-26

Family

ID=13890102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8655075A Pending JPS5210081A (en) 1975-07-14 1975-07-14 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5210081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340424A (en) * 1989-03-09 1991-02-21 Fuji Electric Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340424A (en) * 1989-03-09 1991-02-21 Fuji Electric Co Ltd Manufacture of semiconductor device

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