JPS5316587A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5316587A
JPS5316587A JP9034676A JP9034676A JPS5316587A JP S5316587 A JPS5316587 A JP S5316587A JP 9034676 A JP9034676 A JP 9034676A JP 9034676 A JP9034676 A JP 9034676A JP S5316587 A JPS5316587 A JP S5316587A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
active regions
produce high
high breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9034676A
Other languages
Japanese (ja)
Other versions
JPS60776B2 (en
Inventor
Ichiro Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51090346A priority Critical patent/JPS60776B2/en
Publication of JPS5316587A publication Critical patent/JPS5316587A/en
Publication of JPS60776B2 publication Critical patent/JPS60776B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To produce high breakdown voltage ICs of small chip areas by forming active regions with two epitaxial layers of varying impurity concentrations.
COPYRIGHT: (C)1978,JPO&Japio
JP51090346A 1976-07-30 1976-07-30 semiconductor equipment Expired JPS60776B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51090346A JPS60776B2 (en) 1976-07-30 1976-07-30 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51090346A JPS60776B2 (en) 1976-07-30 1976-07-30 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5316587A true JPS5316587A (en) 1978-02-15
JPS60776B2 JPS60776B2 (en) 1985-01-10

Family

ID=13995959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51090346A Expired JPS60776B2 (en) 1976-07-30 1976-07-30 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS60776B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123039A (en) * 1983-11-18 1985-07-01 モトローラ・インコーポレーテツド Epitaxially separated semiconductor device and method of producing same
US4670770A (en) * 1984-02-21 1987-06-02 American Telephone And Telegraph Company Integrated circuit chip-and-substrate assembly

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123039A (en) * 1983-11-18 1985-07-01 モトローラ・インコーポレーテツド Epitaxially separated semiconductor device and method of producing same
US4670770A (en) * 1984-02-21 1987-06-02 American Telephone And Telegraph Company Integrated circuit chip-and-substrate assembly

Also Published As

Publication number Publication date
JPS60776B2 (en) 1985-01-10

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