JPS53108380A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53108380A JPS53108380A JP2267777A JP2267777A JPS53108380A JP S53108380 A JPS53108380 A JP S53108380A JP 2267777 A JP2267777 A JP 2267777A JP 2267777 A JP2267777 A JP 2267777A JP S53108380 A JPS53108380 A JP S53108380A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- breakdown voltage
- mitigating
- constitution
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase the breakdown voltage, by mitigating the distribution of the impurity concentration for the junction formed, in the semiconductor device of finite high breakdown voltage constitution.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2267777A JPS53108380A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2267777A JPS53108380A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22005985A Division JPS61105873A (en) | 1985-10-04 | 1985-10-04 | Manufacture of semiconductor device |
JP22005885A Division JPS61105872A (en) | 1985-10-04 | 1985-10-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53108380A true JPS53108380A (en) | 1978-09-21 |
Family
ID=12089484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2267777A Pending JPS53108380A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53108380A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211277A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Semiconductor device |
JPS6064472A (en) * | 1983-09-19 | 1985-04-13 | Toshiba Corp | Semiconductor device |
US5045486A (en) * | 1990-06-26 | 1991-09-03 | At&T Bell Laboratories | Transistor fabrication method |
JPH07106563A (en) * | 1994-04-15 | 1995-04-21 | Toshiba Corp | Manufacture of semiconductor device |
JPH08316421A (en) * | 1995-05-24 | 1996-11-29 | Nec Corp | Semiconductor integrated circuit device |
-
1977
- 1977-03-04 JP JP2267777A patent/JPS53108380A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211277A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Semiconductor device |
JPS6064472A (en) * | 1983-09-19 | 1985-04-13 | Toshiba Corp | Semiconductor device |
US5045486A (en) * | 1990-06-26 | 1991-09-03 | At&T Bell Laboratories | Transistor fabrication method |
JPH07106563A (en) * | 1994-04-15 | 1995-04-21 | Toshiba Corp | Manufacture of semiconductor device |
JPH08316421A (en) * | 1995-05-24 | 1996-11-29 | Nec Corp | Semiconductor integrated circuit device |
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