JPS53108380A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108380A
JPS53108380A JP2267777A JP2267777A JPS53108380A JP S53108380 A JPS53108380 A JP S53108380A JP 2267777 A JP2267777 A JP 2267777A JP 2267777 A JP2267777 A JP 2267777A JP S53108380 A JPS53108380 A JP S53108380A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
mitigating
constitution
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2267777A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kamigaki
Kiyoo Ito
Shinji Onishi
Isao Yoshida
Hiroo Masuda
Junichi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2267777A priority Critical patent/JPS53108380A/en
Publication of JPS53108380A publication Critical patent/JPS53108380A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the breakdown voltage, by mitigating the distribution of the impurity concentration for the junction formed, in the semiconductor device of finite high breakdown voltage constitution.
COPYRIGHT: (C)1978,JPO&Japio
JP2267777A 1977-03-04 1977-03-04 Semiconductor device Pending JPS53108380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2267777A JPS53108380A (en) 1977-03-04 1977-03-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2267777A JPS53108380A (en) 1977-03-04 1977-03-04 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP22005985A Division JPS61105873A (en) 1985-10-04 1985-10-04 Manufacture of semiconductor device
JP22005885A Division JPS61105872A (en) 1985-10-04 1985-10-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53108380A true JPS53108380A (en) 1978-09-21

Family

ID=12089484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2267777A Pending JPS53108380A (en) 1977-03-04 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108380A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211277A (en) * 1983-05-17 1984-11-30 Toshiba Corp Semiconductor device
JPS6064472A (en) * 1983-09-19 1985-04-13 Toshiba Corp Semiconductor device
US5045486A (en) * 1990-06-26 1991-09-03 At&T Bell Laboratories Transistor fabrication method
JPH07106563A (en) * 1994-04-15 1995-04-21 Toshiba Corp Manufacture of semiconductor device
JPH08316421A (en) * 1995-05-24 1996-11-29 Nec Corp Semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211277A (en) * 1983-05-17 1984-11-30 Toshiba Corp Semiconductor device
JPS6064472A (en) * 1983-09-19 1985-04-13 Toshiba Corp Semiconductor device
US5045486A (en) * 1990-06-26 1991-09-03 At&T Bell Laboratories Transistor fabrication method
JPH07106563A (en) * 1994-04-15 1995-04-21 Toshiba Corp Manufacture of semiconductor device
JPH08316421A (en) * 1995-05-24 1996-11-29 Nec Corp Semiconductor integrated circuit device

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