JPS5427774A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5427774A
JPS5427774A JP9350877A JP9350877A JPS5427774A JP S5427774 A JPS5427774 A JP S5427774A JP 9350877 A JP9350877 A JP 9350877A JP 9350877 A JP9350877 A JP 9350877A JP S5427774 A JPS5427774 A JP S5427774A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrodes
films
integrated circuit
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9350877A
Other languages
Japanese (ja)
Other versions
JPS6123665B2 (en
Inventor
Kunio Aomura
Hiroshi Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9350877A priority Critical patent/JPS5427774A/en
Publication of JPS5427774A publication Critical patent/JPS5427774A/en
Publication of JPS6123665B2 publication Critical patent/JPS6123665B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the area of the semiconductor device by mutually superposing electrodes through electric insulators in the integrated circuit device using polycrystalline silicon thin-films for electrodes.
COPYRIGHT: (C)1979,JPO&Japio
JP9350877A 1977-08-03 1977-08-03 Semiconductor device Granted JPS5427774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9350877A JPS5427774A (en) 1977-08-03 1977-08-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9350877A JPS5427774A (en) 1977-08-03 1977-08-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5427774A true JPS5427774A (en) 1979-03-02
JPS6123665B2 JPS6123665B2 (en) 1986-06-06

Family

ID=14084279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9350877A Granted JPS5427774A (en) 1977-08-03 1977-08-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5427774A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466076A (en) * 1977-10-25 1979-05-28 Ibm Semiconductor bipolar device
JPS58172A (en) * 1981-06-25 1983-01-05 Oki Electric Ind Co Ltd Manufacturing method for semiconductor integrated circuit device
JPS60175452A (en) * 1984-02-20 1985-09-09 Matsushita Electronics Corp Manufacture of transistor
JPS62216270A (en) * 1986-05-15 1987-09-22 Nec Corp Manufacture of semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466076A (en) * 1977-10-25 1979-05-28 Ibm Semiconductor bipolar device
JPS62588B2 (en) * 1977-10-25 1987-01-08 Intaanashonaru Bijinesu Mashiinzu Corp
JPS58172A (en) * 1981-06-25 1983-01-05 Oki Electric Ind Co Ltd Manufacturing method for semiconductor integrated circuit device
JPH0128507B2 (en) * 1981-06-25 1989-06-02 Oki Electric Ind Co Ltd
JPS60175452A (en) * 1984-02-20 1985-09-09 Matsushita Electronics Corp Manufacture of transistor
JPH0464179B2 (en) * 1984-02-20 1992-10-14 Matsushita Electronics Corp
JPS62216270A (en) * 1986-05-15 1987-09-22 Nec Corp Manufacture of semiconductor device
JPH0447457B2 (en) * 1986-05-15 1992-08-04 Nippon Electric Co

Also Published As

Publication number Publication date
JPS6123665B2 (en) 1986-06-06

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