JPS5354989A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5354989A
JPS5354989A JP13065876A JP13065876A JPS5354989A JP S5354989 A JPS5354989 A JP S5354989A JP 13065876 A JP13065876 A JP 13065876A JP 13065876 A JP13065876 A JP 13065876A JP S5354989 A JPS5354989 A JP S5354989A
Authority
JP
Japan
Prior art keywords
layers
semiconductor device
polycrystalline
polystalline
imprurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13065876A
Other languages
Japanese (ja)
Other versions
JPS5841785B2 (en
Inventor
Kazuo Maeda
Yukio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13065876A priority Critical patent/JPS5841785B2/en
Publication of JPS5354989A publication Critical patent/JPS5354989A/en
Publication of JPS5841785B2 publication Critical patent/JPS5841785B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE: To considerably decrease the resistance value of polystalline Si layers and increase the conductivity of the polycrystalline Si layers used for electrode wirings by doped slight Ge in the polycrystalline Si layers and containingan imprurity therein.
COPYRIGHT: (C)1978,JPO&Japio
JP13065876A 1976-10-29 1976-10-29 semiconductor equipment Expired JPS5841785B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13065876A JPS5841785B2 (en) 1976-10-29 1976-10-29 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13065876A JPS5841785B2 (en) 1976-10-29 1976-10-29 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5354989A true JPS5354989A (en) 1978-05-18
JPS5841785B2 JPS5841785B2 (en) 1983-09-14

Family

ID=15039504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13065876A Expired JPS5841785B2 (en) 1976-10-29 1976-10-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5841785B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162351A (en) * 1981-03-16 1982-10-06 Fairchild Camera Instr Co Two-dimensional germanium-silicon mutual connector and electrode for integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158378A (en) * 1989-11-15 1991-07-08 Matsushita Electric Works Ltd Elevator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162351A (en) * 1981-03-16 1982-10-06 Fairchild Camera Instr Co Two-dimensional germanium-silicon mutual connector and electrode for integrated circuit

Also Published As

Publication number Publication date
JPS5841785B2 (en) 1983-09-14

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