JPS5354989A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5354989A JPS5354989A JP13065876A JP13065876A JPS5354989A JP S5354989 A JPS5354989 A JP S5354989A JP 13065876 A JP13065876 A JP 13065876A JP 13065876 A JP13065876 A JP 13065876A JP S5354989 A JPS5354989 A JP S5354989A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- semiconductor device
- polycrystalline
- polystalline
- imprurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
Abstract
PURPOSE: To considerably decrease the resistance value of polystalline Si layers and increase the conductivity of the polycrystalline Si layers used for electrode wirings by doped slight Ge in the polycrystalline Si layers and containingan imprurity therein.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13065876A JPS5841785B2 (en) | 1976-10-29 | 1976-10-29 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13065876A JPS5841785B2 (en) | 1976-10-29 | 1976-10-29 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5354989A true JPS5354989A (en) | 1978-05-18 |
JPS5841785B2 JPS5841785B2 (en) | 1983-09-14 |
Family
ID=15039504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13065876A Expired JPS5841785B2 (en) | 1976-10-29 | 1976-10-29 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5841785B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162351A (en) * | 1981-03-16 | 1982-10-06 | Fairchild Camera Instr Co | Two-dimensional germanium-silicon mutual connector and electrode for integrated circuit |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03158378A (en) * | 1989-11-15 | 1991-07-08 | Matsushita Electric Works Ltd | Elevator |
-
1976
- 1976-10-29 JP JP13065876A patent/JPS5841785B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162351A (en) * | 1981-03-16 | 1982-10-06 | Fairchild Camera Instr Co | Two-dimensional germanium-silicon mutual connector and electrode for integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5841785B2 (en) | 1983-09-14 |
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