JPS5317064A - Impurity diffusion method - Google Patents

Impurity diffusion method

Info

Publication number
JPS5317064A
JPS5317064A JP9111276A JP9111276A JPS5317064A JP S5317064 A JPS5317064 A JP S5317064A JP 9111276 A JP9111276 A JP 9111276A JP 9111276 A JP9111276 A JP 9111276A JP S5317064 A JPS5317064 A JP S5317064A
Authority
JP
Japan
Prior art keywords
impurity diffusion
diffusion method
wafers
windward
spacings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9111276A
Other languages
Japanese (ja)
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9111276A priority Critical patent/JPS5317064A/en
Publication of JPS5317064A publication Critical patent/JPS5317064A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To reduce the variations in the layer resistance of wafers by making the spacings between BN plates and wafers shorter on the windward and longer on the lee and performing diffusion.
COPYRIGHT: (C)1978,JPO&Japio
JP9111276A 1976-07-30 1976-07-30 Impurity diffusion method Pending JPS5317064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9111276A JPS5317064A (en) 1976-07-30 1976-07-30 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9111276A JPS5317064A (en) 1976-07-30 1976-07-30 Impurity diffusion method

Publications (1)

Publication Number Publication Date
JPS5317064A true JPS5317064A (en) 1978-02-16

Family

ID=14017424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9111276A Pending JPS5317064A (en) 1976-07-30 1976-07-30 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS5317064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009143508A (en) * 2007-12-18 2009-07-02 Honda Motor Co Ltd Throttle device for vehicle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009143508A (en) * 2007-12-18 2009-07-02 Honda Motor Co Ltd Throttle device for vehicle

Similar Documents

Publication Publication Date Title
JPS5421265A (en) Forming method of semiconductor oxide film
JPS5317064A (en) Impurity diffusion method
JPS5249991A (en) Sputtering method
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5317081A (en) Production of i2l device
JPS5411682A (en) Semiconductor device
JPS53133366A (en) Impurity diffusion method
JPS5228879A (en) Semiconductor device and method for its production
JPS52107777A (en) Production of semiconductor unit
JPS5219968A (en) Semiconductor ic manufacturig process
JPS546461A (en) Manufacture of semiconductor device
JPS5353266A (en) Probe card
JPS5354989A (en) Semiconductor device
JPS5317063A (en) Impurity diffusion method
JPS51120457A (en) Fin-attached heat exchanger
JPS53140976A (en) Semiconductor device
JPS5363866A (en) Production of semiconductor device
JPS5384690A (en) Field effect transistor
JPS5227280A (en) Method to form pinholes
JPS51135381A (en) Semiconductor device and its manufacturing method
JPS5349943A (en) Impurity diffusion method
JPS52143759A (en) Impurity diffusion method for semiconductor wafers
JPS528787A (en) Semiconductor device process
JPS52122475A (en) Production of semiconductor device
JPS51141583A (en) Method for producing an electrode for use semiconductor units