JPS5214377A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5214377A JPS5214377A JP9030275A JP9030275A JPS5214377A JP S5214377 A JPS5214377 A JP S5214377A JP 9030275 A JP9030275 A JP 9030275A JP 9030275 A JP9030275 A JP 9030275A JP S5214377 A JPS5214377 A JP S5214377A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layers
- collector
- double
- improve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: Double expitaxial layers with varied impurity concentrations are formed between collector and base layers to improve the second breakdown voltage.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9030275A JPS5214377A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9030275A JPS5214377A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5214377A true JPS5214377A (en) | 1977-02-03 |
Family
ID=13994730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9030275A Pending JPS5214377A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5214377A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5518073A (en) * | 1978-07-26 | 1980-02-07 | Fujitsu Ltd | Manufacture of variable-capacity diode |
US5237183A (en) * | 1989-12-14 | 1993-08-17 | Motorola, Inc. | High reverse voltage IGT |
-
1975
- 1975-07-25 JP JP9030275A patent/JPS5214377A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5518073A (en) * | 1978-07-26 | 1980-02-07 | Fujitsu Ltd | Manufacture of variable-capacity diode |
US5237183A (en) * | 1989-12-14 | 1993-08-17 | Motorola, Inc. | High reverse voltage IGT |
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