JPS5368990A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS5368990A
JPS5368990A JP14504576A JP14504576A JPS5368990A JP S5368990 A JPS5368990 A JP S5368990A JP 14504576 A JP14504576 A JP 14504576A JP 14504576 A JP14504576 A JP 14504576A JP S5368990 A JPS5368990 A JP S5368990A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
gate circuit
decreasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14504576A
Other languages
Japanese (ja)
Inventor
Osamu Inoue
Yoshinori Morita
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14504576A priority Critical patent/JPS5368990A/en
Publication of JPS5368990A publication Critical patent/JPS5368990A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce use area without decreasing the operating speed of the gate circuit of an I2 L and make perfect the electrical isolation between each gate circuit by providing the interelement isolating regions composed of the combination of an oxide and a high impurity concentration region in a vertical direction from the epitaxial layer surface down to the buried layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14504576A 1976-12-01 1976-12-01 Production of semiconductor integrated circuit Pending JPS5368990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14504576A JPS5368990A (en) 1976-12-01 1976-12-01 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14504576A JPS5368990A (en) 1976-12-01 1976-12-01 Production of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5368990A true JPS5368990A (en) 1978-06-19

Family

ID=15376101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14504576A Pending JPS5368990A (en) 1976-12-01 1976-12-01 Production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5368990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656537A (en) * 1994-11-28 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having SOI structure
US5801080A (en) * 1993-07-05 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor substrate having total and partial dielectric isolation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736785A (en) * 1971-03-20 1972-11-29
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5164386A (en) * 1974-10-09 1976-06-03 Philips Nv

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4736785A (en) * 1971-03-20 1972-11-29
JPS5164386A (en) * 1974-10-09 1976-06-03 Philips Nv
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801080A (en) * 1993-07-05 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor substrate having total and partial dielectric isolation
US6198134B1 (en) 1993-07-05 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a common substrate bias
US6351014B2 (en) 1993-07-05 2002-02-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having different field oxide sizes
US6727552B2 (en) 1993-07-05 2004-04-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5656537A (en) * 1994-11-28 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having SOI structure

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