JPS4736785A - - Google Patents

Info

Publication number
JPS4736785A
JPS4736785A JP2662672A JP2662672A JPS4736785A JP S4736785 A JPS4736785 A JP S4736785A JP 2662672 A JP2662672 A JP 2662672A JP 2662672 A JP2662672 A JP 2662672A JP S4736785 A JPS4736785 A JP S4736785A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2662672A
Other languages
Japanese (ja)
Other versions
JPS5550390B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed filed Critical
Publication of JPS4736785A publication Critical patent/JPS4736785A/ja
Publication of JPS5550390B1 publication Critical patent/JPS5550390B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/02Manually-operated control
    • H03G3/04Manually-operated control in untuned amplifiers
    • H03G3/10Manually-operated control in untuned amplifiers having semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806Arrangements for feeding power
    • H04B10/807Optical power feeding, i.e. transmitting power using an optical signal
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
JP2662672A 1971-03-20 1972-03-17 Pending JPS5550390B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (en) 1971-03-20 1971-03-20
NL7108373A NL7108373A (en) 1971-06-18 1971-06-18

Publications (2)

Publication Number Publication Date
JPS4736785A true JPS4736785A (en) 1972-11-29
JPS5550390B1 JPS5550390B1 (en) 1980-12-17

Family

ID=26644637

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2662672A Pending JPS5550390B1 (en) 1971-03-20 1972-03-17
JP6906780A Granted JPS55160465A (en) 1971-03-20 1980-05-26 Semiconductor device
JP6906880A Granted JPS55160466A (en) 1971-03-20 1980-05-26 Semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP6906780A Granted JPS55160465A (en) 1971-03-20 1980-05-26 Semiconductor device
JP6906880A Granted JPS55160466A (en) 1971-03-20 1980-05-26 Semiconductor device

Country Status (13)

Country Link
JP (3) JPS5550390B1 (en)
AR (1) AR196071A1 (en)
AT (1) AT326193B (en)
AU (1) AU467899B2 (en)
BE (1) BE780961A (en)
BR (1) BR7201587D0 (en)
CA (3) CA964335A (en)
CH (1) CH550487A (en)
DE (1) DE2211384A1 (en)
FR (1) FR2130399B1 (en)
GB (1) GB1395032A (en)
IT (1) IT953971B (en)
SE (1) SE377735B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (en) * 1972-12-29 1976-12-15
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS50137478A (en) * 1974-04-18 1975-10-31
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5718710B2 (en) * 1974-05-10 1982-04-17
JPS5648983B2 (en) * 1974-05-10 1981-11-19
DE2641915A1 (en) * 1976-09-17 1978-03-23 Siemens Ag MONOLITHICALLY INTEGRATED CIRCUIT FOR GENERATING PULSES OF LONG DURATION
DE2641912C3 (en) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Circuit arrangement for the transmission of electrical power supplies
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (en) * 1984-12-26 1986-07-12 Toshiba Corp Optical semiconductor device and manufacture thereof
FR2619959B1 (en) * 1987-08-31 1991-06-14 Thomson Semiconducteurs LIGHT DETECTION CIRCUIT
JP2800827B2 (en) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 Optical semiconductor device and method for manufacturing the same
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (en) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistor device with reduced short-circuit current

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL281945A (en) * 1960-10-14 1900-01-01
GB1050478A (en) * 1962-10-08
FR1377412A (en) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Reverse epitaxial transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit

Also Published As

Publication number Publication date
AT326193B (en) 1975-11-25
CA973955A (en) 1975-09-02
IT953971B (en) 1973-08-10
JPS55160466A (en) 1980-12-13
AR196071A1 (en) 1973-11-30
BE780961A (en) 1972-09-20
AU467899B2 (en) 1975-12-18
DE2211384A1 (en) 1972-11-30
SE377735B (en) 1975-07-21
CH550487A (en) 1974-06-14
FR2130399A1 (en) 1972-11-03
CA964335A (en) 1975-03-11
DE2211384C2 (en) 1989-06-15
FR2130399B1 (en) 1977-09-02
JPS5622145B2 (en) 1981-05-23
ATA236072A (en) 1975-02-15
GB1395032A (en) 1975-05-21
JPS5622144B2 (en) 1981-05-23
JPS5550390B1 (en) 1980-12-17
JPS55160465A (en) 1980-12-13
AU3997072A (en) 1973-09-20
BR7201587D0 (en) 1974-10-22
CA970068A (en) 1975-06-24

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