GB1395032A - Electrical circuit arrangements including radiation energised circuit elements - Google Patents

Electrical circuit arrangements including radiation energised circuit elements

Info

Publication number
GB1395032A
GB1395032A GB1258572A GB1258572A GB1395032A GB 1395032 A GB1395032 A GB 1395032A GB 1258572 A GB1258572 A GB 1258572A GB 1258572 A GB1258572 A GB 1258572A GB 1395032 A GB1395032 A GB 1395032A
Authority
GB
United Kingdom
Prior art keywords
energised
including radiation
arrangements including
march
electrical circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1258572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB4929074A priority Critical patent/GB1395034A/en
Priority to GB4927674A priority patent/GB1395033A/en
Publication of GB1395032A publication Critical patent/GB1395032A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)

Abstract

1395032 Detector circuits PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 March 1972 [20 March 1971 18 June 1971] 12585/72 Heading G1A [Also in Divisions H1, H3 and H5] The output current path of a transistor is supplied by an irradiated semi-conductor junction which may be the emitter-base junction of a succeeding transistor (see Division H3). In one embodiment an oscillator circuit is formed from such transistors and the variation in frequency with the irradiation level is used to sense the level. Reference is made to the use of daylight, infrared and ultraviolet irradiation lamps and also to the use of incandescent discharge lamps and light-emitting diodes.
GB1258572A 1971-03-20 1972-03-17 Electrical circuit arrangements including radiation energised circuit elements Expired GB1395032A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB4929074A GB1395034A (en) 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element
GB4927674A GB1395033A (en) 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (en) 1971-03-20 1971-03-20
NL7108373A NL7108373A (en) 1971-06-18 1971-06-18

Publications (1)

Publication Number Publication Date
GB1395032A true GB1395032A (en) 1975-05-21

Family

ID=26644637

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258572A Expired GB1395032A (en) 1971-03-20 1972-03-17 Electrical circuit arrangements including radiation energised circuit elements

Country Status (13)

Country Link
JP (3) JPS5550390B1 (en)
AR (1) AR196071A1 (en)
AT (1) AT326193B (en)
AU (1) AU467899B2 (en)
BE (1) BE780961A (en)
BR (1) BR7201587D0 (en)
CA (3) CA964335A (en)
CH (1) CH550487A (en)
DE (1) DE2211384A1 (en)
FR (1) FR2130399B1 (en)
GB (1) GB1395032A (en)
IT (1) IT953971B (en)
SE (1) SE377735B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146194A2 (en) * 1983-12-20 1985-06-26 Philips Electronics Uk Limited Semiconductor devices
GB2220316A (en) * 1988-05-05 1990-01-04 Plessey Co Plc Ring oscillator

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (en) * 1972-12-29 1976-12-15
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS50137478A (en) * 1974-04-18 1975-10-31
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5718710B2 (en) * 1974-05-10 1982-04-17
JPS5648983B2 (en) * 1974-05-10 1981-11-19
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
DE2641915A1 (en) * 1976-09-17 1978-03-23 Siemens Ag MONOLITHICALLY INTEGRATED CIRCUIT FOR GENERATING PULSES OF LONG DURATION
DE2641912C3 (en) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Circuit arrangement for the transmission of electrical power supplies
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
JPS61154063A (en) * 1984-12-26 1986-07-12 Toshiba Corp Optical semiconductor device and manufacture thereof
FR2619959B1 (en) * 1987-08-31 1991-06-14 Thomson Semiconducteurs LIGHT DETECTION CIRCUIT
JP2800827B2 (en) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 Optical semiconductor device and method for manufacturing the same
DE102010039258B4 (en) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistor device with reduced short-circuit current

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL270243A (en) * 1960-10-14 1900-01-01
NL297821A (en) * 1962-10-08
FR1377412A (en) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Reverse epitaxial transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146194A2 (en) * 1983-12-20 1985-06-26 Philips Electronics Uk Limited Semiconductor devices
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
EP0146194A3 (en) * 1983-12-20 1986-12-30 Philips Electronic And Associated Industries Limited Semiconductor devices
GB2220316A (en) * 1988-05-05 1990-01-04 Plessey Co Plc Ring oscillator
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators

Also Published As

Publication number Publication date
CA970068A (en) 1975-06-24
DE2211384A1 (en) 1972-11-30
IT953971B (en) 1973-08-10
CA964335A (en) 1975-03-11
JPS4736785A (en) 1972-11-29
JPS55160465A (en) 1980-12-13
JPS5622145B2 (en) 1981-05-23
CA973955A (en) 1975-09-02
SE377735B (en) 1975-07-21
FR2130399A1 (en) 1972-11-03
DE2211384C2 (en) 1989-06-15
AT326193B (en) 1975-11-25
FR2130399B1 (en) 1977-09-02
JPS5622144B2 (en) 1981-05-23
JPS55160466A (en) 1980-12-13
AU467899B2 (en) 1975-12-18
BE780961A (en) 1972-09-20
JPS5550390B1 (en) 1980-12-17
AR196071A1 (en) 1973-11-30
BR7201587D0 (en) 1974-10-22
AU3997072A (en) 1973-09-20
ATA236072A (en) 1975-02-15
CH550487A (en) 1974-06-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee