JPS52154384A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS52154384A JPS52154384A JP7109576A JP7109576A JPS52154384A JP S52154384 A JPS52154384 A JP S52154384A JP 7109576 A JP7109576 A JP 7109576A JP 7109576 A JP7109576 A JP 7109576A JP S52154384 A JPS52154384 A JP S52154384A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- composing
- bipolar
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an IC of a high scale of integration capable of obtaining large current by composing a logic circuit with a complementary type MIS-IC and composing an output circuit with a bipolar IC thereby forming both circuits within the same chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7109576A JPS52154384A (en) | 1976-06-18 | 1976-06-18 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7109576A JPS52154384A (en) | 1976-06-18 | 1976-06-18 | Semiconductor integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60070926A Division JPS60242660A (en) | 1985-04-05 | 1985-04-05 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52154384A true JPS52154384A (en) | 1977-12-22 |
Family
ID=13450624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7109576A Pending JPS52154384A (en) | 1976-06-18 | 1976-06-18 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52154384A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768075A (en) * | 1980-10-16 | 1982-04-26 | Nippon Gakki Seizo Kk | Manufacture of integrated circuit device |
JPS61276359A (en) * | 1985-05-31 | 1986-12-06 | Nec Corp | Semiconductor device and manufacture thereof |
-
1976
- 1976-06-18 JP JP7109576A patent/JPS52154384A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768075A (en) * | 1980-10-16 | 1982-04-26 | Nippon Gakki Seizo Kk | Manufacture of integrated circuit device |
JPS61276359A (en) * | 1985-05-31 | 1986-12-06 | Nec Corp | Semiconductor device and manufacture thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040113 |
|
LAPS | Cancellation because of no payment of annual fees |