JPS52154384A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS52154384A
JPS52154384A JP7109576A JP7109576A JPS52154384A JP S52154384 A JPS52154384 A JP S52154384A JP 7109576 A JP7109576 A JP 7109576A JP 7109576 A JP7109576 A JP 7109576A JP S52154384 A JPS52154384 A JP S52154384A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
composing
bipolar
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7109576A
Other languages
Japanese (ja)
Inventor
Kazutaka Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7109576A priority Critical patent/JPS52154384A/en
Publication of JPS52154384A publication Critical patent/JPS52154384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an IC of a high scale of integration capable of obtaining large current by composing a logic circuit with a complementary type MIS-IC and composing an output circuit with a bipolar IC thereby forming both circuits within the same chip.
JP7109576A 1976-06-18 1976-06-18 Semiconductor integrated circuit Pending JPS52154384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7109576A JPS52154384A (en) 1976-06-18 1976-06-18 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109576A JPS52154384A (en) 1976-06-18 1976-06-18 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60070926A Division JPS60242660A (en) 1985-04-05 1985-04-05 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS52154384A true JPS52154384A (en) 1977-12-22

Family

ID=13450624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7109576A Pending JPS52154384A (en) 1976-06-18 1976-06-18 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS52154384A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device
JPS61276359A (en) * 1985-05-31 1986-12-06 Nec Corp Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device
JPS61276359A (en) * 1985-05-31 1986-12-06 Nec Corp Semiconductor device and manufacture thereof

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