JPS5768075A - Manufacture of integrated circuit device - Google Patents

Manufacture of integrated circuit device

Info

Publication number
JPS5768075A
JPS5768075A JP14461780A JP14461780A JPS5768075A JP S5768075 A JPS5768075 A JP S5768075A JP 14461780 A JP14461780 A JP 14461780A JP 14461780 A JP14461780 A JP 14461780A JP S5768075 A JPS5768075 A JP S5768075A
Authority
JP
Japan
Prior art keywords
type
layer
island
transistor
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14461780A
Other languages
Japanese (ja)
Inventor
Masahiko Hotta
Terumoto Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP14461780A priority Critical patent/JPS5768075A/en
Priority to US06/309,428 priority patent/US4409725A/en
Publication of JPS5768075A publication Critical patent/JPS5768075A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To obtain an IC of a static induction type transistor (SIT) and a C- MOSFET by simple steps commonly used to manufacture each transistor in several treatment steps. CONSTITUTION:An N type epitaxial layer 14 is isolted via a P<+> type layer 16 on a P type Si substrate 10 having an N<+> type buried layer 12, and a P type well 18 is partly formed on an island 14B. The P<+> type emitter 20 of a bipolar element Q1 and a P<+> type gate 22 of an SITQ2 are formed on an island 14A, and a P-channel preventive layer 24 and the P<+> type layers 26, 28 of an FET are formed on an island 14B. They are selectively opened with holes to form polysilicons 40, 42, 44, 46, and with a mask 44, a hole is opened at an SiO2 film 36. An N<+> type layer 4850 is diffused in the P type well 18 to allow the layers 44, 40, 42, 46 conductive. An SiO2 film 56 is covered, a hole is selectively opened, aluminum electrodes are attached, and wires 64 are connected as predetermined. With this structure, a bipolar transistor Q1, an SITQ2, an N type channel IGFETQ3, and P type channel IGFET Q4 are integrated commonly in the manufacturing steps on the substrate 10.
JP14461780A 1980-10-16 1980-10-16 Manufacture of integrated circuit device Pending JPS5768075A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14461780A JPS5768075A (en) 1980-10-16 1980-10-16 Manufacture of integrated circuit device
US06/309,428 US4409725A (en) 1980-10-16 1981-10-07 Method of making semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14461780A JPS5768075A (en) 1980-10-16 1980-10-16 Manufacture of integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5768075A true JPS5768075A (en) 1982-04-26

Family

ID=15366192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14461780A Pending JPS5768075A (en) 1980-10-16 1980-10-16 Manufacture of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5768075A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192082A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60158655A (en) * 1984-01-27 1985-08-20 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS60217657A (en) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS63284846A (en) * 1987-05-18 1988-11-22 Res Dev Corp Of Japan Semiconductor integrated circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154384A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor
JPS5413280A (en) * 1977-07-01 1979-01-31 Nippon Precision Circuits Semiconductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154384A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS5413280A (en) * 1977-07-01 1979-01-31 Nippon Precision Circuits Semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192082A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0345548B2 (en) * 1983-07-08 1991-07-11 Matsushita Electronics Corp
JPS60158655A (en) * 1984-01-27 1985-08-20 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS60217657A (en) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS63284846A (en) * 1987-05-18 1988-11-22 Res Dev Corp Of Japan Semiconductor integrated circuit
JPH0370377B2 (en) * 1987-05-18 1991-11-07 Shingijutsu Jigyodan

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