JPS56169359A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56169359A
JPS56169359A JP7351980A JP7351980A JPS56169359A JP S56169359 A JPS56169359 A JP S56169359A JP 7351980 A JP7351980 A JP 7351980A JP 7351980 A JP7351980 A JP 7351980A JP S56169359 A JPS56169359 A JP S56169359A
Authority
JP
Japan
Prior art keywords
type
mask
integrated circuit
steps
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7351980A
Other languages
Japanese (ja)
Other versions
JPH0427707B2 (en
Inventor
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7351980A priority Critical patent/JPS56169359A/en
Publication of JPS56169359A publication Critical patent/JPS56169359A/en
Publication of JPH0427707B2 publication Critical patent/JPH0427707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To effectively prevent a latch-up of a semiconductor integrated circuit device due to a parasitic element by performing the steps of isolating elements and forming of a well with one mask in one step when providing a bipolar transistor and a complementary FET on the same substrate and reducing the number of steps. CONSTITUTION:When N<+> type layers 102, 103 are buried in a P type Si substrate 100, an N type epitaxial layer 104 is superposed thereon and N type wells 105, 106 are respectively formed via SiO2 mask 71 on the buried layers, they are isolated with the layer 104, the steps can be remarkably simplified as compared with the conventional process inexpensively and readily. Then, a mask 81 is formed, and P<+> type base 107, source 108, drain 109, and channels 111, 112 are formed. Then, a mask 91 is formed, N<+> type emitter 113, source 114, drain 115, and connecting layer 116 are formed, a gate oxidized film 119 and a gate electrode 120 are eventually formed, and prescribed electrodes 120-126 are then formed to complete the integrated circuit. According to this configuration, since the base width of the parasitic element with the layers 114-104-103 is large, its hfe is small and its latch- up can be effectively prevented.
JP7351980A 1980-05-30 1980-05-30 Semiconductor integrated circuit device Granted JPS56169359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7351980A JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7351980A JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP58226204A Division JPS59188162A (en) 1983-11-29 1983-11-29 Semiconductor integrated circuit device
JP8545890A Division JPH0316166A (en) 1990-03-31 1990-03-31 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56169359A true JPS56169359A (en) 1981-12-26
JPH0427707B2 JPH0427707B2 (en) 1992-05-12

Family

ID=13520567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7351980A Granted JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56169359A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58170048A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS58182863A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
JPS58225663A (en) * 1982-06-23 1983-12-27 Toshiba Corp Manufacture of semiconductor device
JPS6080267A (en) * 1983-10-07 1985-05-08 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS6097661A (en) * 1983-11-02 1985-05-31 Hitachi Ltd Semiconductor integrated circuit device
JPS60101963A (en) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd Manufacture of complementary type filed effect transistor
JPS60218866A (en) * 1984-04-13 1985-11-01 Mitsubishi Electric Corp Complementary mos semiconductor device
JPS6325964A (en) * 1987-02-13 1988-02-03 Seiko Epson Corp Cmos type semiconductor integrated circuit device
JPS63278265A (en) * 1986-11-04 1988-11-15 サムスン　エレクトロニクス　カンパニー　リミテッド Manufacture of semiconductor bicmos device
JPS63301545A (en) * 1987-05-30 1988-12-08 Ricoh Co Ltd Manufacture of semiconductor integrated circuit device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS58170048A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS58182863A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
JPH0481341B2 (en) * 1982-04-21 1992-12-22 Hitachi Ltd
JPS58225663A (en) * 1982-06-23 1983-12-27 Toshiba Corp Manufacture of semiconductor device
JPH0315346B2 (en) * 1983-10-07 1991-02-28 Tokyo Shibaura Electric Co
JPS6080267A (en) * 1983-10-07 1985-05-08 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS6097661A (en) * 1983-11-02 1985-05-31 Hitachi Ltd Semiconductor integrated circuit device
JPS60101963A (en) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd Manufacture of complementary type filed effect transistor
JPS60218866A (en) * 1984-04-13 1985-11-01 Mitsubishi Electric Corp Complementary mos semiconductor device
JPS63278265A (en) * 1986-11-04 1988-11-15 サムスン　エレクトロニクス　カンパニー　リミテッド Manufacture of semiconductor bicmos device
JPS6325964A (en) * 1987-02-13 1988-02-03 Seiko Epson Corp Cmos type semiconductor integrated circuit device
JPS63301545A (en) * 1987-05-30 1988-12-08 Ricoh Co Ltd Manufacture of semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH0427707B2 (en) 1992-05-12

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