JPS5598844A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5598844A JPS5598844A JP670279A JP670279A JPS5598844A JP S5598844 A JPS5598844 A JP S5598844A JP 670279 A JP670279 A JP 670279A JP 670279 A JP670279 A JP 670279A JP S5598844 A JPS5598844 A JP S5598844A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- region
- diffused
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To readily fabricate and improve the integrating degree of a semiconductor itegrated circuit by adding further one layer on the p-type and n-type layers of a field effect semiconsuctor element when forming field effect and bipolar transistors on the same substrate.
CONSTITUTION: A p-type layer is epitaxially grown on an n-type silicon substrate 11 to provide an isolating SiO2 film 14 reaching the substrate 11, thereby isolating the p-type layer into the layer 13a of a field effect transistor and the layer 13b of a bipolar transistor. When a p+-type region 15a is newly diffused in one end of the layer 13a so that the layer 13a is in floated state, the variation of the threshold voltage of a channel 12a provided later is prevented, and a p+-type base contact region 15b is formed in the end of the layer 13b. Thereafter, an n-type channel region 12a is diffused in the layer 13a, n+-type regions 5 and 6 are provided in the region 12a, and a gate electrode 3 is formed through a gate oxide film 7 on the region 12a disposed between the regions 5 and 6. An n-type channel region 12b is also diffused in the layer 13b, an n+-type region 16 is provided in the region 12b.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP670279A JPS5598844A (en) | 1979-01-22 | 1979-01-22 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP670279A JPS5598844A (en) | 1979-01-22 | 1979-01-22 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5598844A true JPS5598844A (en) | 1980-07-28 |
Family
ID=11645642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP670279A Pending JPS5598844A (en) | 1979-01-22 | 1979-01-22 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598844A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244616A (en) * | 1989-03-16 | 1990-09-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1979
- 1979-01-22 JP JP670279A patent/JPS5598844A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244616A (en) * | 1989-03-16 | 1990-09-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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