JPS56101758A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56101758A
JPS56101758A JP495880A JP495880A JPS56101758A JP S56101758 A JPS56101758 A JP S56101758A JP 495880 A JP495880 A JP 495880A JP 495880 A JP495880 A JP 495880A JP S56101758 A JPS56101758 A JP S56101758A
Authority
JP
Japan
Prior art keywords
oxide film
layer
semiconductor substrate
wiring layer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP495880A
Other languages
Japanese (ja)
Inventor
Akira Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP495880A priority Critical patent/JPS56101758A/en
Publication of JPS56101758A publication Critical patent/JPS56101758A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable the formation of microminiature semiconductor device by forming a wiring layer between the first oxide film and the second oxide film of a field MOS FET formed on a part for preventing the parasitic channel of a semiconductor substrate, thereby reducing the thickness of the first oxide film. CONSTITUTION:A high density impurity injection region 5 is formed to prevent the parasitic channel at the semiconductor substrate 1, selectively oxidized to form an oxide layer 6, a gate silicon oxide layer 7 is formed thereon, wiring layers 8, 13 formed on polycrystalline Si are formed on the layers 6, 7, reverse conducitivity type impurity is diffused to form a diffused layer 9, then silicon oxide film 10 and aluminum wire 12 are sequentially formed, and the wiring layer 13 is formed at the same potential as the low voltage or semiconductor substrate. Since the oxide film 6 can be reduced in thickness as compared with the conventional one due to the wiring layer 13, it can produce the microminiature semiconductor.
JP495880A 1980-01-18 1980-01-18 Semiconductor device Pending JPS56101758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP495880A JPS56101758A (en) 1980-01-18 1980-01-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP495880A JPS56101758A (en) 1980-01-18 1980-01-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56101758A true JPS56101758A (en) 1981-08-14

Family

ID=11598082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP495880A Pending JPS56101758A (en) 1980-01-18 1980-01-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56101758A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290149A (en) * 1986-06-09 1987-12-17 Toshiba Corp Semiconductor device
JPS63311744A (en) * 1987-06-15 1988-12-20 Hitachi Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290149A (en) * 1986-06-09 1987-12-17 Toshiba Corp Semiconductor device
JPS63311744A (en) * 1987-06-15 1988-12-20 Hitachi Ltd Semiconductor integrated circuit device

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