JPS57170570A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS57170570A JPS57170570A JP5564981A JP5564981A JPS57170570A JP S57170570 A JPS57170570 A JP S57170570A JP 5564981 A JP5564981 A JP 5564981A JP 5564981 A JP5564981 A JP 5564981A JP S57170570 A JPS57170570 A JP S57170570A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- substrate
- sio2
- polysilicon
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Chemical class 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the characteristics of withstand voltage and leakage current and the yield of a field effect transistor by forming a multilayer structure of an SiO2 and Si3N4 for an insulating gate when forming the channel of the FET by a double diffusion method. CONSTITUTION:A thermally oxidized film 32 is formed on an Si substrate, an Si3N4 film 33 is laminated by a CVD method, polysilicon is further laminated by a CVD method, polysilicon is further laminated by a CVD method, and is thereby forming an SiO2 film 31. When an insulating gate according to this structure is employed, the Si3N4 has extremely low impurity diffusion coefficient. Accordingly, it can prevent that the insulating gate is punched through to cause the impurity to diffuse in the Si substrate, and since the Si3N4is not immersed by the etchant of the SiO2, no shortcircuit between the substrate and the polysilicon gate electrode 34 is produced. Accordingly, a double diffusion type FET can be formed with high reliability and high yield, thereby improving the characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5564981A JPS57170570A (en) | 1981-04-15 | 1981-04-15 | Field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5564981A JPS57170570A (en) | 1981-04-15 | 1981-04-15 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57170570A true JPS57170570A (en) | 1982-10-20 |
Family
ID=13004668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5564981A Pending JPS57170570A (en) | 1981-04-15 | 1981-04-15 | Field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170570A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042869A (en) * | 1983-06-27 | 1985-03-07 | アルカテル・エヌ・ブイ | Method of producing semiconductor device |
| KR100876861B1 (en) * | 2002-07-12 | 2008-12-31 | 매그나칩 반도체 유한회사 | Gate oxide film formation method of a semiconductor device |
-
1981
- 1981-04-15 JP JP5564981A patent/JPS57170570A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042869A (en) * | 1983-06-27 | 1985-03-07 | アルカテル・エヌ・ブイ | Method of producing semiconductor device |
| KR100876861B1 (en) * | 2002-07-12 | 2008-12-31 | 매그나칩 반도체 유한회사 | Gate oxide film formation method of a semiconductor device |
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