JPS5688362A - Vertical type power mos transistor - Google Patents
Vertical type power mos transistorInfo
- Publication number
- JPS5688362A JPS5688362A JP16538379A JP16538379A JPS5688362A JP S5688362 A JPS5688362 A JP S5688362A JP 16538379 A JP16538379 A JP 16538379A JP 16538379 A JP16538379 A JP 16538379A JP S5688362 A JPS5688362 A JP S5688362A
- Authority
- JP
- Japan
- Prior art keywords
- source
- type
- regions
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To accelerate the switching operation of a power MOS transistor by forming a plurality of source regions under source and gate metallic electrodes and forming a gate electrode in an insulating film under the source metallic electrode. CONSTITUTION:An n<-> type layer 2 is epitaxially grown on an n<+> type Si substrate 1, an SiO2 film 5 is covered on the entire surface, a window is opened thereat corresponding to the source forming region p type and n type impurities are sequentially diffused, and a plurality of n<+> type source regions 41-43 surrounded by p type base regions 31-33 are formed in the layer 2. Subsequently, the entire surface is oxidized, impurity-doped polycrystalline Si film is accumulated thereon, is buried as a gate electrode 6, the contacting portions between source metallic electrode 8 formed later and the regions 41-43 are selectively etched and removed, and the entire surface is covered with an SiO2 film 7. Thereafter, a window is opened at the film 7, and source and gate metallic electrodes 8 and 9 contacting the regions 4 and the electrode 6 respectively are mounted thereon. Thus, the chip can be effectively used, and two sets of gate electrodes are used, thereby accelerating the operation of the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16538379A JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16538379A JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688362A true JPS5688362A (en) | 1981-07-17 |
JPS6313352B2 JPS6313352B2 (en) | 1988-03-25 |
Family
ID=15811336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16538379A Granted JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688362A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572220A1 (en) * | 1984-10-23 | 1986-04-25 | Rca Corp | SEMICONDUCTOR DEVICE WITH FIELD EFFECT |
US4801986A (en) * | 1987-04-03 | 1989-01-31 | General Electric Company | Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
FR2640081A1 (en) * | 1988-12-06 | 1990-06-08 | Fuji Electric Co Ltd | VERTICAL FIELD EFFECT TRANSISTOR |
EP0587176A2 (en) * | 1992-09-10 | 1994-03-16 | Kabushiki Kaisha Toshiba | Gate wiring of DMOSFET |
-
1979
- 1979-12-19 JP JP16538379A patent/JPS5688362A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572220A1 (en) * | 1984-10-23 | 1986-04-25 | Rca Corp | SEMICONDUCTOR DEVICE WITH FIELD EFFECT |
US4801986A (en) * | 1987-04-03 | 1989-01-31 | General Electric Company | Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
FR2640081A1 (en) * | 1988-12-06 | 1990-06-08 | Fuji Electric Co Ltd | VERTICAL FIELD EFFECT TRANSISTOR |
EP0587176A2 (en) * | 1992-09-10 | 1994-03-16 | Kabushiki Kaisha Toshiba | Gate wiring of DMOSFET |
EP0587176A3 (en) * | 1992-09-10 | 1994-04-20 | Toshiba Kk | |
US5420450A (en) * | 1992-09-10 | 1995-05-30 | Kabushiki Kaisha Toshiba | Semiconductor device having stable breakdown voltage in wiring area |
Also Published As
Publication number | Publication date |
---|---|
JPS6313352B2 (en) | 1988-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS5688362A (en) | Vertical type power mos transistor | |
JPS5691470A (en) | Semiconductor | |
JPS5727069A (en) | Mos type simiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
JPS56111264A (en) | Manufacture of semiconductor device | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS56125875A (en) | Semiconductor integrated circuit device | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
JPS56146276A (en) | Insulating gate type field-effect transistor | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
JPS57103347A (en) | Manufacture of integrated circuit | |
JPS56133869A (en) | Mos type semiconductor device and manufacture thereof | |
JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
JPS57122577A (en) | Manufacture of semiconductor device | |
JPS55113376A (en) | Manufacturing method of semiconductor device | |
JPS52147983A (en) | Insulation gate type semiconductor device | |
JPS57170570A (en) | Field effect transistor | |
JPS55151365A (en) | Insulated gate type transistor and semiconductor integrated circuit | |
JPS5561072A (en) | Manufacture of diffusion matching type mis ic device | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS5753958A (en) | Semiconductor device |