JPS5688362A - Vertical type power mos transistor - Google Patents

Vertical type power mos transistor

Info

Publication number
JPS5688362A
JPS5688362A JP16538379A JP16538379A JPS5688362A JP S5688362 A JPS5688362 A JP S5688362A JP 16538379 A JP16538379 A JP 16538379A JP 16538379 A JP16538379 A JP 16538379A JP S5688362 A JPS5688362 A JP S5688362A
Authority
JP
Japan
Prior art keywords
source
type
regions
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16538379A
Other languages
Japanese (ja)
Other versions
JPS6313352B2 (en
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16538379A priority Critical patent/JPS5688362A/en
Publication of JPS5688362A publication Critical patent/JPS5688362A/en
Publication of JPS6313352B2 publication Critical patent/JPS6313352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To accelerate the switching operation of a power MOS transistor by forming a plurality of source regions under source and gate metallic electrodes and forming a gate electrode in an insulating film under the source metallic electrode. CONSTITUTION:An n<-> type layer 2 is epitaxially grown on an n<+> type Si substrate 1, an SiO2 film 5 is covered on the entire surface, a window is opened thereat corresponding to the source forming region p type and n type impurities are sequentially diffused, and a plurality of n<+> type source regions 41-43 surrounded by p type base regions 31-33 are formed in the layer 2. Subsequently, the entire surface is oxidized, impurity-doped polycrystalline Si film is accumulated thereon, is buried as a gate electrode 6, the contacting portions between source metallic electrode 8 formed later and the regions 41-43 are selectively etched and removed, and the entire surface is covered with an SiO2 film 7. Thereafter, a window is opened at the film 7, and source and gate metallic electrodes 8 and 9 contacting the regions 4 and the electrode 6 respectively are mounted thereon. Thus, the chip can be effectively used, and two sets of gate electrodes are used, thereby accelerating the operation of the transistor.
JP16538379A 1979-12-19 1979-12-19 Vertical type power mos transistor Granted JPS5688362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Publications (2)

Publication Number Publication Date
JPS5688362A true JPS5688362A (en) 1981-07-17
JPS6313352B2 JPS6313352B2 (en) 1988-03-25

Family

ID=15811336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16538379A Granted JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Country Status (1)

Country Link
JP (1) JPS5688362A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (en) * 1984-10-23 1986-04-25 Rca Corp SEMICONDUCTOR DEVICE WITH FIELD EFFECT
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (en) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd VERTICAL FIELD EFFECT TRANSISTOR
EP0587176A2 (en) * 1992-09-10 1994-03-16 Kabushiki Kaisha Toshiba Gate wiring of DMOSFET

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (en) * 1984-10-23 1986-04-25 Rca Corp SEMICONDUCTOR DEVICE WITH FIELD EFFECT
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (en) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd VERTICAL FIELD EFFECT TRANSISTOR
EP0587176A2 (en) * 1992-09-10 1994-03-16 Kabushiki Kaisha Toshiba Gate wiring of DMOSFET
EP0587176A3 (en) * 1992-09-10 1994-04-20 Toshiba Kk
US5420450A (en) * 1992-09-10 1995-05-30 Kabushiki Kaisha Toshiba Semiconductor device having stable breakdown voltage in wiring area

Also Published As

Publication number Publication date
JPS6313352B2 (en) 1988-03-25

Similar Documents

Publication Publication Date Title
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5688362A (en) Vertical type power mos transistor
JPS5691470A (en) Semiconductor
JPS5727069A (en) Mos type simiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS56111264A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS56146276A (en) Insulating gate type field-effect transistor
JPS54143076A (en) Semiconductor device and its manufacture
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS57103347A (en) Manufacture of integrated circuit
JPS56133869A (en) Mos type semiconductor device and manufacture thereof
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS57122577A (en) Manufacture of semiconductor device
JPS55113376A (en) Manufacturing method of semiconductor device
JPS52147983A (en) Insulation gate type semiconductor device
JPS57170570A (en) Field effect transistor
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS5561072A (en) Manufacture of diffusion matching type mis ic device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5753958A (en) Semiconductor device