JPS55151365A - Insulated gate type transistor and semiconductor integrated circuit - Google Patents

Insulated gate type transistor and semiconductor integrated circuit

Info

Publication number
JPS55151365A
JPS55151365A JP5958379A JP5958379A JPS55151365A JP S55151365 A JPS55151365 A JP S55151365A JP 5958379 A JP5958379 A JP 5958379A JP 5958379 A JP5958379 A JP 5958379A JP S55151365 A JPS55151365 A JP S55151365A
Authority
JP
Japan
Prior art keywords
insulated gate
regions
integrated circuit
source
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5958379A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP5958379A priority Critical patent/JPS55151365A/en
Publication of JPS55151365A publication Critical patent/JPS55151365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To enable high speed operation of an insulated gate transistor by forming the same conducting type layer as a thin layer with less impurity density on one main surface of a low resistance substrate and forming source, drain regions and a gate electrode on the surface thereof. CONSTITUTION:A relatively low density impurity region 12 is epitaxially grown on a relatively high density impurity region 11. Source and drain regions 13 and 14 are formed on the surface thereof, and source and drain electrodes 13', 14' are connected to the regions 13 and 14, respectively. Further, a gate electrode 15 is formed between the regions 13 and 14 on an insulating layer 16.
JP5958379A 1979-05-14 1979-05-14 Insulated gate type transistor and semiconductor integrated circuit Pending JPS55151365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5958379A JPS55151365A (en) 1979-05-14 1979-05-14 Insulated gate type transistor and semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5958379A JPS55151365A (en) 1979-05-14 1979-05-14 Insulated gate type transistor and semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS55151365A true JPS55151365A (en) 1980-11-25

Family

ID=13117386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5958379A Pending JPS55151365A (en) 1979-05-14 1979-05-14 Insulated gate type transistor and semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55151365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62271458A (en) * 1986-05-20 1987-11-25 Toshiba Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62271458A (en) * 1986-05-20 1987-11-25 Toshiba Corp Semiconductor integrated circuit
JP2557846B2 (en) * 1986-05-20 1996-11-27 株式会社東芝 Semiconductor integrated circuit

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