JPS5636165A - Insulated gate type field-effect transistor - Google Patents

Insulated gate type field-effect transistor

Info

Publication number
JPS5636165A
JPS5636165A JP11216879A JP11216879A JPS5636165A JP S5636165 A JPS5636165 A JP S5636165A JP 11216879 A JP11216879 A JP 11216879A JP 11216879 A JP11216879 A JP 11216879A JP S5636165 A JPS5636165 A JP S5636165A
Authority
JP
Japan
Prior art keywords
region
electroconductive type
effect transistor
type field
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11216879A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Natsuo Tsubouchi
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11216879A priority Critical patent/JPS5636165A/en
Publication of JPS5636165A publication Critical patent/JPS5636165A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To reduce the parasitic capacitance between a semiconductor substrate and a source region or a drain region, by providing an insulating region in contact with one of the source and the drain regions. CONSTITUTION:An insulating film 22 having openings is produced on a silicon single crystal substrate 21 of the first electroconductive type. Silicon single crystal films 23 of the first electroconductive type are produced in the openings of the insulating film 22. A polycrystalline silicon film 24 of the first electroconductive type is made on the insulating film 22. A source region 25 of the second electroconductive type, a drain region 26 of the second electroconductive type and a wiring region 27 are produced so that they contain the polycrystalline silicon film 24. A channel producing region 28 of the first electroconductive type is provided by the production of the source region 25 and the drain region 26.
JP11216879A 1979-08-31 1979-08-31 Insulated gate type field-effect transistor Pending JPS5636165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11216879A JPS5636165A (en) 1979-08-31 1979-08-31 Insulated gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11216879A JPS5636165A (en) 1979-08-31 1979-08-31 Insulated gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5636165A true JPS5636165A (en) 1981-04-09

Family

ID=14579939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11216879A Pending JPS5636165A (en) 1979-08-31 1979-08-31 Insulated gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5636165A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635080A (en) * 1986-06-25 1988-01-11 バイエル・アクチエンゲゼルシヤフト 2-trifluoromethyl-benzimidazole
US4745047A (en) * 1986-01-24 1988-05-17 Fuji Photo Film Co., Ltd. Color image-forming process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745047A (en) * 1986-01-24 1988-05-17 Fuji Photo Film Co., Ltd. Color image-forming process
JPS635080A (en) * 1986-06-25 1988-01-11 バイエル・アクチエンゲゼルシヤフト 2-trifluoromethyl-benzimidazole

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