JPS55130173A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS55130173A
JPS55130173A JP3752379A JP3752379A JPS55130173A JP S55130173 A JPS55130173 A JP S55130173A JP 3752379 A JP3752379 A JP 3752379A JP 3752379 A JP3752379 A JP 3752379A JP S55130173 A JPS55130173 A JP S55130173A
Authority
JP
Japan
Prior art keywords
region
diffused
gate
type
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3752379A
Other languages
Japanese (ja)
Other versions
JPS6152591B2 (en
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP3752379A priority Critical patent/JPS55130173A/en
Publication of JPS55130173A publication Critical patent/JPS55130173A/en
Publication of JPS6152591B2 publication Critical patent/JPS6152591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten the channels of an insulated gate field effect transistor by forming the channel of the first gate in a double vertical diffused structure and forming the channel of a second gate in a double lateral diffused structure. CONSTITUTION:Boron is selectively diffused in an epitaxial layer 12 to form a p- type first impurity region 13. Phosphorus (P) is selectively diffused to form an n- type second impurity region 14 in the region 13 and similarly an n-type region 15 to surround the region 13 in ring shape at predetermined distance therefrom. The P is diffused in the region 14 through diffusing opening. An anisotropic etching is conducted to form a V-shaped groove 16 through the regions 13, 14 and further an impurity diffused buried layer 11. The first and second gate insulating films 17, 18 are coated on the surface between the regions 15 and 14 and on the surface of the groove, respectively, a thick field insulating film 19 is coated on the other portion. The electrodes G1, G2 of the first and the second gates and drain and soruce electrodes D and S are introduced to the films 17, 18, respectively.
JP3752379A 1979-03-29 1979-03-29 Insulated gate field effect transistor Granted JPS55130173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3752379A JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3752379A JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS55130173A true JPS55130173A (en) 1980-10-08
JPS6152591B2 JPS6152591B2 (en) 1986-11-13

Family

ID=12499895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3752379A Granted JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55130173A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
CN102637722A (en) * 2011-02-12 2012-08-15 飞思卡尔半导体公司 Semiconductor device and relative manufacturing method thereof
WO2012106833A1 (en) 2011-02-12 2012-08-16 Freescale Semiconductor, Inc. Are Semiconductor device and related fabrication methods
CN103489864A (en) * 2012-06-13 2014-01-01 株式会社东芝 Power semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129699U (en) * 1985-02-01 1986-08-14

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
CN102637722A (en) * 2011-02-12 2012-08-15 飞思卡尔半导体公司 Semiconductor device and relative manufacturing method thereof
WO2012106833A1 (en) 2011-02-12 2012-08-16 Freescale Semiconductor, Inc. Are Semiconductor device and related fabrication methods
JP2014508408A (en) * 2011-02-12 2014-04-03 フリースケール セミコンダクター インコーポレイテッド Semiconductor device and related manufacturing method
TWI557807B (en) * 2011-02-12 2016-11-11 飛思卡爾半導體公司 Semiconductor device and related fabrication methods
EP2673806A4 (en) * 2011-02-12 2017-12-06 NXP USA, Inc. Semiconductor device and related fabrication methods
CN103489864A (en) * 2012-06-13 2014-01-01 株式会社东芝 Power semiconductor device

Also Published As

Publication number Publication date
JPS6152591B2 (en) 1986-11-13

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