GB1499548A - Process for fabricating complementary insulated gate field effect transistor structure and the structure fabricated by the process - Google Patents
Process for fabricating complementary insulated gate field effect transistor structure and the structure fabricated by the processInfo
- Publication number
- GB1499548A GB1499548A GB2128575A GB2128575A GB1499548A GB 1499548 A GB1499548 A GB 1499548A GB 2128575 A GB2128575 A GB 2128575A GB 2128575 A GB2128575 A GB 2128575A GB 1499548 A GB1499548 A GB 1499548A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- channel device
- substrate
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 4
- 230000000295 complement effect Effects 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
- H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1499548 Semi-conductor devices FAIRCHILD CAMERA & INSTRUMENT CORP 19 May 1975 [3 June 1974] 21285/75 Heading H1K In a process for making a complementary IGFET structure in a semi-conductor substrate 10, the N-channel device is formed in a P-type well which also receives N-type impurities to produce a doping concentration profile with a higher P-type concentration at the bottom of the well than at the surface. The N- and P- type impurities, e.g. B and As, are diffused or ion implanted sequentially or simultaneously. In a preferred method, the impurities are deposited on the substrate surface and then driven-in by a heating step. The complementary devices are isolated by SiO 2 surround regions 20c and N-type doping 17c is carried out to prevent inversion in the substrate. The respective source and drain regions are made by depositing B for the P-channel device and P for the N-channel device followed by a thermal drive-in step. Metallic connections 50-52 are then made over an insulation layer to the source and drain regions.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47535874A | 1974-06-03 | 1974-06-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1499548A true GB1499548A (en) | 1978-02-01 |
Family
ID=23887225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2128575A Expired GB1499548A (en) | 1974-06-03 | 1975-05-19 | Process for fabricating complementary insulated gate field effect transistor structure and the structure fabricated by the process |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5619746B2 (en) |
CA (1) | CA1017073A (en) |
DE (1) | DE2523379C2 (en) |
FR (1) | FR2275888A1 (en) |
GB (1) | GB1499548A (en) |
HK (1) | HK27981A (en) |
IT (1) | IT1032951B (en) |
NL (1) | NL185591C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128401A (en) * | 1982-09-24 | 1984-04-26 | Hitachi Ltd | Method of manufacturing semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160466A (en) * | 1974-11-22 | 1976-05-26 | Hitachi Ltd | Handotaisochino seizohoho |
JPS5286083A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
DE2945854A1 (en) * | 1979-11-13 | 1981-05-21 | Deutsche Itt Industries Gmbh, 7800 Freiburg | ION IMPLANTATION PROCEDURE |
US4345366A (en) * | 1980-10-20 | 1982-08-24 | Ncr Corporation | Self-aligned all-n+ polysilicon CMOS process |
JPH0636425B2 (en) * | 1983-02-23 | 1994-05-11 | テキサス インスツルメンツ インコ−ポレイテツド | Method for manufacturing CMOS device |
EP0123384A1 (en) * | 1983-02-25 | 1984-10-31 | Western Digital Corporation | Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure |
JP2572653B2 (en) * | 1989-12-29 | 1997-01-16 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104070B (en) * | 1959-01-27 | 1961-04-06 | Siemens Ag | Method for producing a semiconductor triode having an intrinsic or nearly intrinsic zone |
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
US3648225A (en) * | 1969-12-04 | 1972-03-07 | Sperry Rand Corp | Digital sonar doppler navigator |
NL160988C (en) * | 1971-06-08 | 1979-12-17 | Philips Nv | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE. |
JPS49123287A (en) * | 1973-03-28 | 1974-11-26 |
-
1975
- 1975-05-06 CA CA226,321A patent/CA1017073A/en not_active Expired
- 1975-05-19 GB GB2128575A patent/GB1499548A/en not_active Expired
- 1975-05-21 IT IT6831975A patent/IT1032951B/en active
- 1975-05-27 DE DE19752523379 patent/DE2523379C2/en not_active Expired
- 1975-05-28 NL NL7506288A patent/NL185591C/en not_active IP Right Cessation
- 1975-05-30 FR FR7516972A patent/FR2275888A1/en active Granted
- 1975-06-02 JP JP6545175A patent/JPS5619746B2/ja not_active Expired
-
1981
- 1981-06-25 HK HK27981A patent/HK27981A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128401A (en) * | 1982-09-24 | 1984-04-26 | Hitachi Ltd | Method of manufacturing semiconductor device |
US4549340A (en) * | 1982-09-24 | 1985-10-29 | Hitachi, Ltd. | Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby |
Also Published As
Publication number | Publication date |
---|---|
NL7506288A (en) | 1975-12-05 |
JPS5619746B2 (en) | 1981-05-09 |
DE2523379A1 (en) | 1975-12-11 |
NL185591C (en) | 1990-05-16 |
CA1017073A (en) | 1977-09-06 |
FR2275888B1 (en) | 1981-08-21 |
FR2275888A1 (en) | 1976-01-16 |
JPS515969A (en) | 1976-01-19 |
IT1032951B (en) | 1979-06-20 |
HK27981A (en) | 1981-07-03 |
DE2523379C2 (en) | 1986-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19950518 |