JPS55148466A - Cmos semiconductor device and its manufacture - Google Patents
Cmos semiconductor device and its manufactureInfo
- Publication number
- JPS55148466A JPS55148466A JP5725779A JP5725779A JPS55148466A JP S55148466 A JPS55148466 A JP S55148466A JP 5725779 A JP5725779 A JP 5725779A JP 5725779 A JP5725779 A JP 5725779A JP S55148466 A JPS55148466 A JP S55148466A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- source
- drain
- semiconductor device
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To increase the density of a CMOS semiconductor device while performing high speed variation by reducing the diffusion capacity of the device. CONSTITUTION:A thermal oxide film 2, is silicon nitride film 3 and an oxide film 4 including phosphrous are sequentially formed on an n-type silicon substrate 1, and grooves A are then formed thereon. Then, the oxide film 4 and the silicon nitride film 3 are removed between the grooves A and A, boron ion is implanted thereon to form a p-type well 5. Thereafter, the oxide film 6 of the region becoming the source and drain region of an n-channel MOS field effect transistor is removed, phosphorus is diffused to form source and drain 7. Similarly, the source and drain 8 of a p-channel MOS field effect transistor is formed. Then, a gate oxide film 9 is formed, and necessary wire is formed with aluminum subsequently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5725779A JPS55148466A (en) | 1979-05-10 | 1979-05-10 | Cmos semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5725779A JPS55148466A (en) | 1979-05-10 | 1979-05-10 | Cmos semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55148466A true JPS55148466A (en) | 1980-11-19 |
Family
ID=13050469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5725779A Pending JPS55148466A (en) | 1979-05-10 | 1979-05-10 | Cmos semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55148466A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572542A (en) * | 1980-06-05 | 1982-01-07 | Nippon Precision Saakitsutsu Kk | Semiconductor device and manufacture thereof |
JPS5940563A (en) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | Manufacture of semiconductor device |
JPS5955055A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59121865A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Manufacture of complementary semiconductor device |
JPS59161859A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Complementary type metal oxide semiconductor device and manufacture thereof |
JPS61248459A (en) * | 1985-04-25 | 1986-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Complementary type mis semiconductor integrated circuit |
US4656730A (en) * | 1984-11-23 | 1987-04-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating CMOS devices |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS504989A (en) * | 1973-05-16 | 1975-01-20 | ||
JPS5125986A (en) * | 1974-08-28 | 1976-03-03 | Hitachi Ltd | HANDOTAISHUSEKIKAIROSOCHI NO SEIZOHOHO |
JPS5131186A (en) * | 1974-09-11 | 1976-03-17 | Hitachi Ltd | |
JPS5169377A (en) * | 1975-11-10 | 1976-06-15 | Hitachi Ltd | HANDOTA ISOCHI |
JPS5260079A (en) * | 1975-11-13 | 1977-05-18 | Fujitsu Ltd | Production of semiconductor device |
JPS5467784A (en) * | 1977-11-09 | 1979-05-31 | Seiko Instr & Electronics Ltd | High integration ic |
-
1979
- 1979-05-10 JP JP5725779A patent/JPS55148466A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS504989A (en) * | 1973-05-16 | 1975-01-20 | ||
JPS5125986A (en) * | 1974-08-28 | 1976-03-03 | Hitachi Ltd | HANDOTAISHUSEKIKAIROSOCHI NO SEIZOHOHO |
JPS5131186A (en) * | 1974-09-11 | 1976-03-17 | Hitachi Ltd | |
JPS5169377A (en) * | 1975-11-10 | 1976-06-15 | Hitachi Ltd | HANDOTA ISOCHI |
JPS5260079A (en) * | 1975-11-13 | 1977-05-18 | Fujitsu Ltd | Production of semiconductor device |
JPS5467784A (en) * | 1977-11-09 | 1979-05-31 | Seiko Instr & Electronics Ltd | High integration ic |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572542A (en) * | 1980-06-05 | 1982-01-07 | Nippon Precision Saakitsutsu Kk | Semiconductor device and manufacture thereof |
JPS5940563A (en) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | Manufacture of semiconductor device |
JPH0481339B2 (en) * | 1982-08-31 | 1992-12-22 | Tokyo Shibaura Electric Co | |
JPS5955055A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59121865A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Manufacture of complementary semiconductor device |
JPH0481340B2 (en) * | 1982-12-28 | 1992-12-22 | Tokyo Shibaura Electric Co | |
JPS59161859A (en) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | Complementary type metal oxide semiconductor device and manufacture thereof |
US4656730A (en) * | 1984-11-23 | 1987-04-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating CMOS devices |
JPS61248459A (en) * | 1985-04-25 | 1986-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Complementary type mis semiconductor integrated circuit |
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