JPS55148466A - Cmos semiconductor device and its manufacture - Google Patents

Cmos semiconductor device and its manufacture

Info

Publication number
JPS55148466A
JPS55148466A JP5725779A JP5725779A JPS55148466A JP S55148466 A JPS55148466 A JP S55148466A JP 5725779 A JP5725779 A JP 5725779A JP 5725779 A JP5725779 A JP 5725779A JP S55148466 A JPS55148466 A JP S55148466A
Authority
JP
Japan
Prior art keywords
oxide film
source
drain
semiconductor device
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5725779A
Other languages
Japanese (ja)
Inventor
Nobuhiro Endo
Katsumi Suzuki
Masao Tajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5725779A priority Critical patent/JPS55148466A/en
Publication of JPS55148466A publication Critical patent/JPS55148466A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the density of a CMOS semiconductor device while performing high speed variation by reducing the diffusion capacity of the device. CONSTITUTION:A thermal oxide film 2, is silicon nitride film 3 and an oxide film 4 including phosphrous are sequentially formed on an n-type silicon substrate 1, and grooves A are then formed thereon. Then, the oxide film 4 and the silicon nitride film 3 are removed between the grooves A and A, boron ion is implanted thereon to form a p-type well 5. Thereafter, the oxide film 6 of the region becoming the source and drain region of an n-channel MOS field effect transistor is removed, phosphorus is diffused to form source and drain 7. Similarly, the source and drain 8 of a p-channel MOS field effect transistor is formed. Then, a gate oxide film 9 is formed, and necessary wire is formed with aluminum subsequently.
JP5725779A 1979-05-10 1979-05-10 Cmos semiconductor device and its manufacture Pending JPS55148466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5725779A JPS55148466A (en) 1979-05-10 1979-05-10 Cmos semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5725779A JPS55148466A (en) 1979-05-10 1979-05-10 Cmos semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS55148466A true JPS55148466A (en) 1980-11-19

Family

ID=13050469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5725779A Pending JPS55148466A (en) 1979-05-10 1979-05-10 Cmos semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS55148466A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572542A (en) * 1980-06-05 1982-01-07 Nippon Precision Saakitsutsu Kk Semiconductor device and manufacture thereof
JPS5940563A (en) * 1982-08-31 1984-03-06 Toshiba Corp Manufacture of semiconductor device
JPS5955055A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS59121865A (en) * 1982-12-28 1984-07-14 Toshiba Corp Manufacture of complementary semiconductor device
JPS59161859A (en) * 1983-03-07 1984-09-12 Toshiba Corp Complementary type metal oxide semiconductor device and manufacture thereof
JPS61248459A (en) * 1985-04-25 1986-11-05 Nippon Telegr & Teleph Corp <Ntt> Complementary type mis semiconductor integrated circuit
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504989A (en) * 1973-05-16 1975-01-20
JPS5125986A (en) * 1974-08-28 1976-03-03 Hitachi Ltd HANDOTAISHUSEKIKAIROSOCHI NO SEIZOHOHO
JPS5131186A (en) * 1974-09-11 1976-03-17 Hitachi Ltd
JPS5169377A (en) * 1975-11-10 1976-06-15 Hitachi Ltd HANDOTA ISOCHI
JPS5260079A (en) * 1975-11-13 1977-05-18 Fujitsu Ltd Production of semiconductor device
JPS5467784A (en) * 1977-11-09 1979-05-31 Seiko Instr & Electronics Ltd High integration ic

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504989A (en) * 1973-05-16 1975-01-20
JPS5125986A (en) * 1974-08-28 1976-03-03 Hitachi Ltd HANDOTAISHUSEKIKAIROSOCHI NO SEIZOHOHO
JPS5131186A (en) * 1974-09-11 1976-03-17 Hitachi Ltd
JPS5169377A (en) * 1975-11-10 1976-06-15 Hitachi Ltd HANDOTA ISOCHI
JPS5260079A (en) * 1975-11-13 1977-05-18 Fujitsu Ltd Production of semiconductor device
JPS5467784A (en) * 1977-11-09 1979-05-31 Seiko Instr & Electronics Ltd High integration ic

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572542A (en) * 1980-06-05 1982-01-07 Nippon Precision Saakitsutsu Kk Semiconductor device and manufacture thereof
JPS5940563A (en) * 1982-08-31 1984-03-06 Toshiba Corp Manufacture of semiconductor device
JPH0481339B2 (en) * 1982-08-31 1992-12-22 Tokyo Shibaura Electric Co
JPS5955055A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS59121865A (en) * 1982-12-28 1984-07-14 Toshiba Corp Manufacture of complementary semiconductor device
JPH0481340B2 (en) * 1982-12-28 1992-12-22 Tokyo Shibaura Electric Co
JPS59161859A (en) * 1983-03-07 1984-09-12 Toshiba Corp Complementary type metal oxide semiconductor device and manufacture thereof
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
JPS61248459A (en) * 1985-04-25 1986-11-05 Nippon Telegr & Teleph Corp <Ntt> Complementary type mis semiconductor integrated circuit

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