JPS572542A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS572542A
JPS572542A JP7582880A JP7582880A JPS572542A JP S572542 A JPS572542 A JP S572542A JP 7582880 A JP7582880 A JP 7582880A JP 7582880 A JP7582880 A JP 7582880A JP S572542 A JPS572542 A JP S572542A
Authority
JP
Japan
Prior art keywords
isolation
elements
slit
forming
area required
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7582880A
Other languages
Japanese (ja)
Inventor
Yoichi Takahashi
Atsushi Owada
Takekiyo Ushiwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON PRECISION SAAKITSUTSU KK
Nippon Precision Circuits Inc
Original Assignee
NIPPON PRECISION SAAKITSUTSU KK
Nippon Precision Circuits Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON PRECISION SAAKITSUTSU KK, Nippon Precision Circuits Inc filed Critical NIPPON PRECISION SAAKITSUTSU KK
Priority to JP7582880A priority Critical patent/JPS572542A/en
Publication of JPS572542A publication Critical patent/JPS572542A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce the area required for an isolation between elements by forming a fine slit on a substrate, and forming an oxide layer in the slit, thereby performing the isolation between the elements. CONSTITUTION:A fine slit 32 having a width of approx. 1 micron is formed in a depth of 3-4 microns, for example, by a dry etching method on a silicon substrate 30. Then, it is heated in an oxidative atmosphere, and an oxide 33 is grown. Thus, the area required for the isolation can be reduced to 1/2-1/25 for a bipolar, to 1/3-1/4 for an MOS device and 1/2-1/25 for a C-MOS, thereby decreasing the size of an ultra LSI to extremely small configuration.
JP7582880A 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof Pending JPS572542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7582880A JPS572542A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7582880A JPS572542A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS572542A true JPS572542A (en) 1982-01-07

Family

ID=13587431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7582880A Pending JPS572542A (en) 1980-06-05 1980-06-05 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS572542A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508316A (en) * 1973-05-25 1975-01-28
JPS5176991A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS55148466A (en) * 1979-05-10 1980-11-19 Nec Corp Cmos semiconductor device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508316A (en) * 1973-05-25 1975-01-28
JPS5176991A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS55148466A (en) * 1979-05-10 1980-11-19 Nec Corp Cmos semiconductor device and its manufacture

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