JPS56111239A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56111239A
JPS56111239A JP16180A JP16180A JPS56111239A JP S56111239 A JPS56111239 A JP S56111239A JP 16180 A JP16180 A JP 16180A JP 16180 A JP16180 A JP 16180A JP S56111239 A JPS56111239 A JP S56111239A
Authority
JP
Japan
Prior art keywords
single crystal
substrate
island region
selectively
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16180A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP16180A priority Critical patent/JPS56111239A/en
Publication of JPS56111239A publication Critical patent/JPS56111239A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels

Abstract

PURPOSE:To minimize defects and obtain a single crystal island region, by coating a single crystal Si substrate with polycrystalline Si or amorphous Si film by means of a conductive film, farming its single crystal by laser annealing and oxidizing it selectively. CONSTITUTION:An SiO2 film 11 is formed on a P type Si single crystal substrate 10 with a selectively made opening, and a poly or an amorphous Si 12 is formed. Then it is converted into a single crystal Si 13 after laser beam application and heating. The layer 13 and the substrate 10 are of the same dimensional direction. Thereafter, an Si3N4 mask 15A, 15B are formed and selectively oxidized to have an isolation layer 14 and the island regions 13A, 13B are formed. In the island region, a bipolar transistor and an insulated gate FET are formed respectively as an instance. With such an arrangement, the single crystal island region can easily be obtained with relatively fewer defects and smaller parasitic volume, mutually insulated and separated. Furthermore, double-layered IC are realized on both the substrate and the single crystal, resulting in the greater integration.
JP16180A 1980-01-07 1980-01-07 Preparation of semiconductor device Pending JPS56111239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16180A JPS56111239A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16180A JPS56111239A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111239A true JPS56111239A (en) 1981-09-02

Family

ID=11466311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16180A Pending JPS56111239A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111239A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102517A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Manufacture of semiconductor device
JPS59106132A (en) * 1982-12-09 1984-06-19 Nec Corp Manufacture of semiconductor device
JPS59171114A (en) * 1983-03-18 1984-09-27 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal film
JPH01147827A (en) * 1987-12-04 1989-06-09 Agency Of Ind Science & Technol Manufacture of multilayer semiconductor substrate
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102517A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Manufacture of semiconductor device
JPH0335833B2 (en) * 1981-12-14 1991-05-29 Fujitsu Ltd
JPS59106132A (en) * 1982-12-09 1984-06-19 Nec Corp Manufacture of semiconductor device
JPH0512856B2 (en) * 1982-12-09 1993-02-19 Nippon Electric Co
JPS59171114A (en) * 1983-03-18 1984-09-27 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal film
JPH01147827A (en) * 1987-12-04 1989-06-09 Agency Of Ind Science & Technol Manufacture of multilayer semiconductor substrate
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US5707889A (en) * 1993-08-12 1998-01-13 Motorola Inc. Process for forming field isolation

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