JPS5694671A - Manufacture of mis field-effect semiconductor device - Google Patents
Manufacture of mis field-effect semiconductor deviceInfo
- Publication number
- JPS5694671A JPS5694671A JP17201479A JP17201479A JPS5694671A JP S5694671 A JPS5694671 A JP S5694671A JP 17201479 A JP17201479 A JP 17201479A JP 17201479 A JP17201479 A JP 17201479A JP S5694671 A JPS5694671 A JP S5694671A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicide
- gate electrode
- homogeneous
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021332 silicide Inorganic materials 0.000 abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To make excellent the contact of a gate electrode with Al wiring by providing an Mo film and a polycrystalline Si film or an Mo silicide film on a gate insulation film and by turning the same into a homogeneous Mo silicide by application of laser beams on the occasion that Mo is employed as a gate electrode. CONSTITUTION:A thick field SiO2 film 2 is formed in the peripheral part of a p type Si substrate 1, while a thin gate SiO2 film 3 is connected to the surface of the substrate 1 surrounded by the film 2, and the Mo film 4 is formed on the whole surface by the spattering method. Then, on the Mo film 4, a film 5 formed of phosphrus-containing polycrystalline Si or phosphorus-containing Mo silicide is made to grow by the CVD method. Next, by using mask of a photoresist film 6, the films 5, 4 and 3 are subjected to patterning, As<+> ions are deposited on the whole surface of the device by the ion-injection method, and later the device is heated locally by near-infrared rays or a visible-radiation laser, thereby the films 5 and 4 are melted to be formed into the gate electrode 7 composed of the homogeneous phsphrus- containing Mo silicide. After that, n<+> type source and drain regions 8 and 9 are formed diffusely by an ordinary method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17201479A JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17201479A JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5694671A true JPS5694671A (en) | 1981-07-31 |
| JPH0214791B2 JPH0214791B2 (en) | 1990-04-10 |
Family
ID=15933921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17201479A Granted JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5694671A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61271827A (en) * | 1985-05-27 | 1986-12-02 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4680619A (en) * | 1983-09-15 | 1987-07-14 | U.S. Philips Corporation | Semiconductor device having silicon conductor tracks connected by a metal silicide track |
| US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
| US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114671A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Manufacture for semiconductor device |
-
1979
- 1979-12-27 JP JP17201479A patent/JPS5694671A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114671A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Manufacture for semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4680619A (en) * | 1983-09-15 | 1987-07-14 | U.S. Philips Corporation | Semiconductor device having silicon conductor tracks connected by a metal silicide track |
| JPS61271827A (en) * | 1985-05-27 | 1986-12-02 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
| US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7109108B2 (en) | 1992-10-09 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having metal silicide |
| US7602020B2 (en) | 1992-10-09 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7723788B2 (en) | 1992-10-09 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US8017506B2 (en) | 1992-10-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214791B2 (en) | 1990-04-10 |
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