JPS5694671A - Manufacture of mis field-effect semiconductor device - Google Patents

Manufacture of mis field-effect semiconductor device

Info

Publication number
JPS5694671A
JPS5694671A JP17201479A JP17201479A JPS5694671A JP S5694671 A JPS5694671 A JP S5694671A JP 17201479 A JP17201479 A JP 17201479A JP 17201479 A JP17201479 A JP 17201479A JP S5694671 A JPS5694671 A JP S5694671A
Authority
JP
Japan
Prior art keywords
film
silicide
gate electrode
homogeneous
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17201479A
Other languages
Japanese (ja)
Other versions
JPH0214791B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17201479A priority Critical patent/JPS5694671A/en
Publication of JPS5694671A publication Critical patent/JPS5694671A/en
Publication of JPH0214791B2 publication Critical patent/JPH0214791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To make excellent the contact of a gate electrode with Al wiring by providing an Mo film and a polycrystalline Si film or an Mo silicide film on a gate insulation film and by turning the same into a homogeneous Mo silicide by application of laser beams on the occasion that Mo is employed as a gate electrode. CONSTITUTION:A thick field SiO2 film 2 is formed in the peripheral part of a p type Si substrate 1, while a thin gate SiO2 film 3 is connected to the surface of the substrate 1 surrounded by the film 2, and the Mo film 4 is formed on the whole surface by the spattering method. Then, on the Mo film 4, a film 5 formed of phosphrus-containing polycrystalline Si or phosphorus-containing Mo silicide is made to grow by the CVD method. Next, by using mask of a photoresist film 6, the films 5, 4 and 3 are subjected to patterning, As<+> ions are deposited on the whole surface of the device by the ion-injection method, and later the device is heated locally by near-infrared rays or a visible-radiation laser, thereby the films 5 and 4 are melted to be formed into the gate electrode 7 composed of the homogeneous phsphrus- containing Mo silicide. After that, n<+> type source and drain regions 8 and 9 are formed diffusely by an ordinary method.
JP17201479A 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device Granted JPS5694671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17201479A JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17201479A JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5694671A true JPS5694671A (en) 1981-07-31
JPH0214791B2 JPH0214791B2 (en) 1990-04-10

Family

ID=15933921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17201479A Granted JPS5694671A (en) 1979-12-27 1979-12-27 Manufacture of mis field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5694671A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61271827A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Manufacture of semiconductor device
US4680619A (en) * 1983-09-15 1987-07-14 U.S. Philips Corporation Semiconductor device having silicon conductor tracks connected by a metal silicide track
US5304833A (en) * 1989-09-12 1994-04-19 Mitsubishi Electric Corporation Complementary MOS semiconductor device
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114671A (en) * 1977-03-17 1978-10-06 Toshiba Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114671A (en) * 1977-03-17 1978-10-06 Toshiba Corp Manufacture for semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680619A (en) * 1983-09-15 1987-07-14 U.S. Philips Corporation Semiconductor device having silicon conductor tracks connected by a metal silicide track
JPS61271827A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Manufacture of semiconductor device
US5304833A (en) * 1989-09-12 1994-04-19 Mitsubishi Electric Corporation Complementary MOS semiconductor device
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Also Published As

Publication number Publication date
JPH0214791B2 (en) 1990-04-10

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