JPS5694671A - Manufacture of mis field-effect semiconductor device - Google Patents
Manufacture of mis field-effect semiconductor deviceInfo
- Publication number
- JPS5694671A JPS5694671A JP17201479A JP17201479A JPS5694671A JP S5694671 A JPS5694671 A JP S5694671A JP 17201479 A JP17201479 A JP 17201479A JP 17201479 A JP17201479 A JP 17201479A JP S5694671 A JPS5694671 A JP S5694671A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicide
- gate electrode
- homogeneous
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Abstract
PURPOSE:To make excellent the contact of a gate electrode with Al wiring by providing an Mo film and a polycrystalline Si film or an Mo silicide film on a gate insulation film and by turning the same into a homogeneous Mo silicide by application of laser beams on the occasion that Mo is employed as a gate electrode. CONSTITUTION:A thick field SiO2 film 2 is formed in the peripheral part of a p type Si substrate 1, while a thin gate SiO2 film 3 is connected to the surface of the substrate 1 surrounded by the film 2, and the Mo film 4 is formed on the whole surface by the spattering method. Then, on the Mo film 4, a film 5 formed of phosphrus-containing polycrystalline Si or phosphorus-containing Mo silicide is made to grow by the CVD method. Next, by using mask of a photoresist film 6, the films 5, 4 and 3 are subjected to patterning, As<+> ions are deposited on the whole surface of the device by the ion-injection method, and later the device is heated locally by near-infrared rays or a visible-radiation laser, thereby the films 5 and 4 are melted to be formed into the gate electrode 7 composed of the homogeneous phsphrus- containing Mo silicide. After that, n<+> type source and drain regions 8 and 9 are formed diffusely by an ordinary method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17201479A JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17201479A JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5694671A true JPS5694671A (en) | 1981-07-31 |
JPH0214791B2 JPH0214791B2 (en) | 1990-04-10 |
Family
ID=15933921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17201479A Granted JPS5694671A (en) | 1979-12-27 | 1979-12-27 | Manufacture of mis field-effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5694671A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61271827A (en) * | 1985-05-27 | 1986-12-02 | Fujitsu Ltd | Manufacture of semiconductor device |
US4680619A (en) * | 1983-09-15 | 1987-07-14 | U.S. Philips Corporation | Semiconductor device having silicon conductor tracks connected by a metal silicide track |
US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114671A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Manufacture for semiconductor device |
-
1979
- 1979-12-27 JP JP17201479A patent/JPS5694671A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114671A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Manufacture for semiconductor device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680619A (en) * | 1983-09-15 | 1987-07-14 | U.S. Philips Corporation | Semiconductor device having silicon conductor tracks connected by a metal silicide track |
JPS61271827A (en) * | 1985-05-27 | 1986-12-02 | Fujitsu Ltd | Manufacture of semiconductor device |
US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7109108B2 (en) | 1992-10-09 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having metal silicide |
US7602020B2 (en) | 1992-10-09 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US7723788B2 (en) | 1992-10-09 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US8017506B2 (en) | 1992-10-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0214791B2 (en) | 1990-04-10 |
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