JPS5743455A - Complementary type semiconductor device - Google Patents

Complementary type semiconductor device

Info

Publication number
JPS5743455A
JPS5743455A JP55119212A JP11921280A JPS5743455A JP S5743455 A JPS5743455 A JP S5743455A JP 55119212 A JP55119212 A JP 55119212A JP 11921280 A JP11921280 A JP 11921280A JP S5743455 A JPS5743455 A JP S5743455A
Authority
JP
Japan
Prior art keywords
semiconductor device
single crystal
insulator
obtaining
active element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55119212A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Atsuo Iida
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55119212A priority Critical patent/JPS5743455A/en
Publication of JPS5743455A publication Critical patent/JPS5743455A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a complementary semiconductor device having high integration by forming a one conductive type active element in a single crystal semiconductor layer on an insulator and forming a reverse conductive type active element in a single crystal semiconductor layer formed via an insulator thereon. CONSTITUTION:A p type polycrystalline silicon layer 2 is formed by a chemical gas growing method on an insulating substrate 1, and is converted into a single crystal silicon layer by emitting a laser beam. Then, a gate insulating film and a polycrystalline silicon gate electrode 3 are formed, and an n<+> type source region 4 and an n<+> type drain region 5 are formed by an ion implantation method, thereby obtaining an n-channel FET. An insulating film 6 having a window 6A is formed thereon, and a p-channel FET is similarly formed on the film 6. Then, the regions 5, 10 of both FETs are connected at a connecting point 12, thereby obtaining a complementary semiconductor device.
JP55119212A 1980-08-29 1980-08-29 Complementary type semiconductor device Pending JPS5743455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119212A JPS5743455A (en) 1980-08-29 1980-08-29 Complementary type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119212A JPS5743455A (en) 1980-08-29 1980-08-29 Complementary type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5743455A true JPS5743455A (en) 1982-03-11

Family

ID=14755708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119212A Pending JPS5743455A (en) 1980-08-29 1980-08-29 Complementary type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743455A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833869A (en) * 1981-08-25 1983-02-28 Toshiba Corp Semiconductor device
JPS5996761A (en) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp Multi-stage semiconductor device
JPS60147153A (en) * 1984-01-12 1985-08-03 Agency Of Ind Science & Technol Manufacture of semiconductor device
US4698659A (en) * 1982-05-31 1987-10-06 Tokyo Shibaura Denki Kabushiki Kaisha Stacked complementary metal oxide semiconductor inverter
US4754314A (en) * 1984-01-24 1988-06-28 Texas Instruments Incorporated Split-level CMOS
US4777147A (en) * 1987-01-28 1988-10-11 Texas Instruments Incorporated Forming a split-level CMOS device
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833869A (en) * 1981-08-25 1983-02-28 Toshiba Corp Semiconductor device
US4698659A (en) * 1982-05-31 1987-10-06 Tokyo Shibaura Denki Kabushiki Kaisha Stacked complementary metal oxide semiconductor inverter
JPS5996761A (en) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp Multi-stage semiconductor device
JPS60147153A (en) * 1984-01-12 1985-08-03 Agency Of Ind Science & Technol Manufacture of semiconductor device
US4754314A (en) * 1984-01-24 1988-06-28 Texas Instruments Incorporated Split-level CMOS
US4777147A (en) * 1987-01-28 1988-10-11 Texas Instruments Incorporated Forming a split-level CMOS device
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
US5483083A (en) * 1987-11-30 1996-01-09 Hitachi, Ltd. Semiconductor integrated circuit device
US5619055A (en) * 1987-11-30 1997-04-08 Hitachi, Ltd. Semiconductor integrated circuit device
US5700705A (en) * 1987-11-30 1997-12-23 Hitachi, Ltd. Semiconductor integrated circuit device

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