JPS5710267A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710267A
JPS5710267A JP8488580A JP8488580A JPS5710267A JP S5710267 A JPS5710267 A JP S5710267A JP 8488580 A JP8488580 A JP 8488580A JP 8488580 A JP8488580 A JP 8488580A JP S5710267 A JPS5710267 A JP S5710267A
Authority
JP
Japan
Prior art keywords
substrate
oxide films
polycrystalline
films
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8488580A
Other languages
Japanese (ja)
Other versions
JPH0467336B2 (en
Inventor
Junji Sakurai
Atsuo Iida
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8488580A priority Critical patent/JPS5710267A/en
Publication of JPS5710267A publication Critical patent/JPS5710267A/en
Publication of JPH0467336B2 publication Critical patent/JPH0467336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain an SOS type FET by a method wherein a monocrystalline substrate being provided selectively with oxide films, a semiconductor layer is formed being made to single crystal by laser annealing, and a channel region, source and drain regions are formed in the layer. CONSTITUTION:The oxide films 2 are formed selectively in the n<+> type Si substrate 1, and polycrystalline Si is accumlated on the surface. The polycrystalline Si is annealed by a laser beam, for example, to form a monocrystalline layer 3 making the exposed surface of the substrate 1 as a core. After field films 4 are formed, B ions, for example, are implanted in the monocrystalline layer 3 to convert it to p type. Then after thin oxide films 5 to be used as gate films and polycrystalline Si gate electrodes 6 are formed, phosphorus is ion implanted, for example, using the electrodes 6 as masks to form drain regions 7 and a source region 8 being connected in common with the substrate 1. Accordingly the MOSFET having active regions on the oxide films 2 can be formed.
JP8488580A 1980-06-23 1980-06-23 Semiconductor device Granted JPS5710267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710267A true JPS5710267A (en) 1982-01-19
JPH0467336B2 JPH0467336B2 (en) 1992-10-28

Family

ID=13843210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8488580A Granted JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710267A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153850A (en) * 1982-03-08 1983-09-13 極東鋼弦コンクリ−ト振興株式会社 Block for tensioning and fixing ring- shaped pc steel material
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
EP0588300A2 (en) * 1992-09-15 1994-03-23 Canon Kabushiki Kaisha Semiconductor transistor
JPH0878692A (en) * 1994-09-01 1996-03-22 Nec Corp Soi type semiconductor device and its manufacture
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513947A (en) * 1978-07-17 1980-01-31 Seiko Epson Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513947A (en) * 1978-07-17 1980-01-31 Seiko Epson Corp Semiconductor integrated circuit device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153850A (en) * 1982-03-08 1983-09-13 極東鋼弦コンクリ−ト振興株式会社 Block for tensioning and fixing ring- shaped pc steel material
JPH0152539B2 (en) * 1982-03-08 1989-11-09 Kyokuto Kogen Konkuriito Shinko Kk
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
EP0588300A2 (en) * 1992-09-15 1994-03-23 Canon Kabushiki Kaisha Semiconductor transistor
EP0588300A3 (en) * 1992-09-15 1994-10-12 Canon Kk Semiconductor transistor.
US5789790A (en) * 1992-09-15 1998-08-04 Canon Kabushiki Kaisha Semiconductor device
US5998854A (en) * 1992-09-15 1999-12-07 Canon Kabushiki Kaisha Semiconductor device
JPH0878692A (en) * 1994-09-01 1996-03-22 Nec Corp Soi type semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH0467336B2 (en) 1992-10-28

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