JPS5766627A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5766627A
JPS5766627A JP55142733A JP14273380A JPS5766627A JP S5766627 A JPS5766627 A JP S5766627A JP 55142733 A JP55142733 A JP 55142733A JP 14273380 A JP14273380 A JP 14273380A JP S5766627 A JPS5766627 A JP S5766627A
Authority
JP
Japan
Prior art keywords
film
forming
single crystal
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55142733A
Other languages
Japanese (ja)
Inventor
Shuichi Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55142733A priority Critical patent/JPS5766627A/en
Publication of JPS5766627A publication Critical patent/JPS5766627A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the flatness and the crystallization of semiconductor film by a method wherein a semiconductor layer is formed at an opening section provided at the insulating film on a substrate and after forming fine grooves at the insulating film, the semiconductor film is piled up on the insulating film to form single crystal by energy beams. CONSTITUTION:After piling up an insulating film 32 on an N type silicon substrate 31, a nearly vertical opening section 33 is formed at an expected section forming a film 32 resistor. Next, after forming an N<-> type single crystal silicon region 34 to be a resistor in the opening section 33, fine grooves 35 to be a crystal growth nuclide are formed on the surface of the film 32. Next, after piling up a boron-doped polycristaline silicon film on the whole surface of the film 32, a P type single crystal silicon film 36 having specific plane direction is formed by applying laser light to the whole surface of the boron-doped polycrystalline silicon film. Then, after forming a field oxide film 37 at the film 36, phosphorus is implanted at the film 36 part on the region 34 and furthermore, phosphorus is implanted at the other part of the film 36 for activation to form a drain region 38 and a source region 39. After that, a gate oxide film 40 is formed on the whole surface of the film 37 for opening and Al electrodes 43, 44 are formed.
JP55142733A 1980-10-13 1980-10-13 Manufacture of semiconductor device Pending JPS5766627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55142733A JPS5766627A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55142733A JPS5766627A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5766627A true JPS5766627A (en) 1982-04-22

Family

ID=15322307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55142733A Pending JPS5766627A (en) 1980-10-13 1980-10-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766627A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919312A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Manufacture of semiconductor device
JPS5961119A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS60189264A (en) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
JPH09167803A (en) * 1995-12-14 1997-06-24 Nec Corp Semiconductor device
US5668043A (en) * 1995-02-24 1997-09-16 Hyundai Electronics Industries Co., Ltd. Method for forming isolated regions in a semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919312A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Manufacture of semiconductor device
JPS5961119A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS60189264A (en) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
US5668043A (en) * 1995-02-24 1997-09-16 Hyundai Electronics Industries Co., Ltd. Method for forming isolated regions in a semiconductor device
JPH09167803A (en) * 1995-12-14 1997-06-24 Nec Corp Semiconductor device

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