JPS5673697A - Manufacture of single crystal thin film - Google Patents

Manufacture of single crystal thin film

Info

Publication number
JPS5673697A
JPS5673697A JP15008079A JP15008079A JPS5673697A JP S5673697 A JPS5673697 A JP S5673697A JP 15008079 A JP15008079 A JP 15008079A JP 15008079 A JP15008079 A JP 15008079A JP S5673697 A JPS5673697 A JP S5673697A
Authority
JP
Japan
Prior art keywords
film
single crystal
si
substrate
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15008079A
Inventor
Koji Kozuka
Osamu Minato
Shinya Oba
Takahiro Okabe
Osamu Okura
Hiroshi Tamura
Masao Tamura
Takashi Tokuyama
Yasuo Wada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15008079A priority Critical patent/JPS5673697A/en
Priority claimed from NL8006339A external-priority patent/NL8006339A/en
Publication of JPS5673697A publication Critical patent/JPS5673697A/en
Application status is Pending legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge

Abstract

PURPOSE: To obtain a semiconductor device of high performance by continuously coating part of the surface of a single crystal substrate and an insulating film laid on a desired part of the surface with a single crystal semiconductor film and forming a low resistance region in the semiconductor film.
CONSTITUTION: Amorphous SiO2, Si3N4 or Al2O3 film 2 is laid on a desired part of the surface of single crystal Si substrate 1, and the whole surface of substrate 1 including film 2 is coated with 1,000ÅW1μm thick polycrystalline or amorphous Si film 3. A desired part of film 3 is then irradiated with pulse laser with about 5W20W energy at about 1W4J/cm2 laser density to melt film 3. At this time, film 3 contacting with substrate 1 is crystallized, and all of amorphous or polycrystalline Si 3 is finally converted into a single crystal film. A low resistance region is formed in the single crystal Si film by ion implantation or diffusion, and a transistor, a diode, etc. are formed in the film to obtain a semiconductor device having much smaller parasitic capacity as compared to P-N junction.
COPYRIGHT: (C)1981,JPO&Japio
JP15008079A 1979-11-21 1979-11-21 Manufacture of single crystal thin film Pending JPS5673697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15008079A JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15008079A JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film
NL8006339A NL8006339A (en) 1979-11-21 1980-11-20 A semiconductor device and method for the manufacture thereof.
DE19803043913 DE3043913A1 (en) 1979-11-21 1980-11-21 Semiconductor device and method for its manufacture
US06/563,036 US4609407A (en) 1979-11-21 1983-12-19 Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers

Publications (1)

Publication Number Publication Date
JPS5673697A true JPS5673697A (en) 1981-06-18

Family

ID=15489069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15008079A Pending JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film

Country Status (1)

Country Link
JP (1) JPS5673697A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144533A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5823431A (en) * 1981-08-04 1983-02-12 Mitsubishi Electric Corp Manufacture of semiconductor substrate
JPS5831515A (en) * 1981-08-18 1983-02-24 Nec Corp Manufacture of semiconductor thin film
JPS5831552A (en) * 1981-08-18 1983-02-24 Seiko Epson Corp Semiconductor device and manufacture thereof
JPS5831553A (en) * 1981-08-18 1983-02-24 Seiko Epson Corp Semiconductor device and manufacture thereof
JPS5922318A (en) * 1982-07-29 1984-02-04 Nec Corp Forming of single crystal semiconductor layer
US4472729A (en) * 1981-08-31 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Recrystallized three dimensional integrated circuit
JPS6020531A (en) * 1983-06-21 1985-02-01 Puuru Rechiyuudo E Ra Fuaburik Method of producing insulating semiconductor element on semiconductor wafer
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPS60246621A (en) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
JPS61113228A (en) * 1984-11-08 1986-05-31 Agency Of Ind Science & Technol Manufacture of semiconductor thin film crystal layer
JPH01264999A (en) * 1989-01-13 1989-10-23 Seiko Epson Corp Apparatus for growing single crystal si film

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144533A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5823431A (en) * 1981-08-04 1983-02-12 Mitsubishi Electric Corp Manufacture of semiconductor substrate
JPS5831515A (en) * 1981-08-18 1983-02-24 Nec Corp Manufacture of semiconductor thin film
JPS5831552A (en) * 1981-08-18 1983-02-24 Seiko Epson Corp Semiconductor device and manufacture thereof
JPS5831553A (en) * 1981-08-18 1983-02-24 Seiko Epson Corp Semiconductor device and manufacture thereof
JPH0420266B2 (en) * 1981-08-18 1992-04-02 Seiko Epson Corp
US4472729A (en) * 1981-08-31 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Recrystallized three dimensional integrated circuit
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS5922318A (en) * 1982-07-29 1984-02-04 Nec Corp Forming of single crystal semiconductor layer
US5387537A (en) * 1983-06-21 1995-02-07 Soclete Pour I'etude Et Al Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semiconductor components in a semiconductor wafer
US5457338A (en) * 1983-06-21 1995-10-10 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semi conductor components in a semi conductor wafer
JPS6020531A (en) * 1983-06-21 1985-02-01 Puuru Rechiyuudo E Ra Fuaburik Method of producing insulating semiconductor element on semiconductor wafer
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPH0236051B2 (en) * 1984-05-22 1990-08-15 Kogyo Gijutsuin
JPS60246621A (en) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
JPS61113228A (en) * 1984-11-08 1986-05-31 Agency Of Ind Science & Technol Manufacture of semiconductor thin film crystal layer
JPH01264999A (en) * 1989-01-13 1989-10-23 Seiko Epson Corp Apparatus for growing single crystal si film

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