JPS6449225A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6449225A
JPS6449225A JP20518187A JP20518187A JPS6449225A JP S6449225 A JPS6449225 A JP S6449225A JP 20518187 A JP20518187 A JP 20518187A JP 20518187 A JP20518187 A JP 20518187A JP S6449225 A JPS6449225 A JP S6449225A
Authority
JP
Japan
Prior art keywords
thin film
film
silicon
crystal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20518187A
Other languages
Japanese (ja)
Inventor
Eiji Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20518187A priority Critical patent/JPS6449225A/en
Publication of JPS6449225A publication Critical patent/JPS6449225A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the electromigration-resistant properties of an Al electrode wiring by a method wherein a polycrystalline silicon film is melted and recrystallized to form a single-crystal silicon film and a single-crystal Al thin film is formed on it by a cluster ion evaporation method. CONSTITUTION:An aperture is formed in a silicon oxide film 12 on a single crystal substrate 11. A polycrystalline silicon thin film 13 is formed over the whole surface and connected to the substrate 1 1 through the aperture of the silicon oxide film 12. An argon laser beam is applied to the thin film 13 and the thin film 13 is melted and recrystallized to form a single crystal silicon thin film 14. Al is evaporated by a cluster ion evaporation method to form a single crystal Al thin film 15. With this constitution, the electromigration- resistant properties of an Al electrode wiring can be improved.
JP20518187A 1987-08-20 1987-08-20 Manufacture of semiconductor device Pending JPS6449225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20518187A JPS6449225A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20518187A JPS6449225A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449225A true JPS6449225A (en) 1989-02-23

Family

ID=16502760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20518187A Pending JPS6449225A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449225A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348511A (en) * 1989-04-14 1991-03-01 Murata Mfg Co Ltd Surface acoustic wave device
US5084403A (en) * 1990-03-16 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire
JPH0468534A (en) * 1990-07-10 1992-03-04 Nec Corp Metal wiring structure and manufacture thereof
JPH06326736A (en) * 1993-05-17 1994-11-25 Matsushita Graphic Commun Syst Inc Modem equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348511A (en) * 1989-04-14 1991-03-01 Murata Mfg Co Ltd Surface acoustic wave device
US5084403A (en) * 1990-03-16 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire
JPH0468534A (en) * 1990-07-10 1992-03-04 Nec Corp Metal wiring structure and manufacture thereof
JPH06326736A (en) * 1993-05-17 1994-11-25 Matsushita Graphic Commun Syst Inc Modem equipment

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