JPS6449225A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6449225A JPS6449225A JP20518187A JP20518187A JPS6449225A JP S6449225 A JPS6449225 A JP S6449225A JP 20518187 A JP20518187 A JP 20518187A JP 20518187 A JP20518187 A JP 20518187A JP S6449225 A JPS6449225 A JP S6449225A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- silicon
- crystal
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve the electromigration-resistant properties of an Al electrode wiring by a method wherein a polycrystalline silicon film is melted and recrystallized to form a single-crystal silicon film and a single-crystal Al thin film is formed on it by a cluster ion evaporation method. CONSTITUTION:An aperture is formed in a silicon oxide film 12 on a single crystal substrate 11. A polycrystalline silicon thin film 13 is formed over the whole surface and connected to the substrate 1 1 through the aperture of the silicon oxide film 12. An argon laser beam is applied to the thin film 13 and the thin film 13 is melted and recrystallized to form a single crystal silicon thin film 14. Al is evaporated by a cluster ion evaporation method to form a single crystal Al thin film 15. With this constitution, the electromigration- resistant properties of an Al electrode wiring can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20518187A JPS6449225A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20518187A JPS6449225A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6449225A true JPS6449225A (en) | 1989-02-23 |
Family
ID=16502760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20518187A Pending JPS6449225A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6449225A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348511A (en) * | 1989-04-14 | 1991-03-01 | Murata Mfg Co Ltd | Surface acoustic wave device |
US5084403A (en) * | 1990-03-16 | 1992-01-28 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire |
JPH0468534A (en) * | 1990-07-10 | 1992-03-04 | Nec Corp | Metal wiring structure and manufacture thereof |
JPH06326736A (en) * | 1993-05-17 | 1994-11-25 | Matsushita Graphic Commun Syst Inc | Modem equipment |
-
1987
- 1987-08-20 JP JP20518187A patent/JPS6449225A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348511A (en) * | 1989-04-14 | 1991-03-01 | Murata Mfg Co Ltd | Surface acoustic wave device |
US5084403A (en) * | 1990-03-16 | 1992-01-28 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire |
JPH0468534A (en) * | 1990-07-10 | 1992-03-04 | Nec Corp | Metal wiring structure and manufacture thereof |
JPH06326736A (en) * | 1993-05-17 | 1994-11-25 | Matsushita Graphic Commun Syst Inc | Modem equipment |
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