JPS5643754A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5643754A
JPS5643754A JP11952079A JP11952079A JPS5643754A JP S5643754 A JPS5643754 A JP S5643754A JP 11952079 A JP11952079 A JP 11952079A JP 11952079 A JP11952079 A JP 11952079A JP S5643754 A JPS5643754 A JP S5643754A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
monocrystalline
polycrystalline
difference
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11952079A
Inventor
Masahiko Denda
Hiromi Sakurai
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Abstract

PURPOSE:To reduce the difference in level with oxide film thinning a polycrystalline layer without thinning a monocrystalline layer by a method wherein the monocrystalline semiconductor is formed to an active region and the polycrystalline semiconductors to an electrode portion, and the difference of speed of oxidation is utilized. CONSTITUTION:Oxide insulating films 2 are made up at both sides on a semiconductor substrate 1, holding a necessary part, and a n<+> type buried layer 4 is built up to the necessary part. Crystals are grown on the oxide films 2 and the buried layer 4 in epitaxial method, and a monocrystalline Si layer 5 is formed to a part where an active element such as a bipolar transistor is made up and polycrystalline Si layers 6 are built up to parts functioning as wiring on the oxide films 2. The whole is oxidized at a low temperature, the polycrystalline Si layers 6 are oxidized at speed treble as fast as the monocrystalline layer 5, and the surfaces of both layers 5a, 6c are made approximately same surfaces. An oxide film 15 is removed, and a bipolar transistor, etc. are formed to the monocrystalline Si layer 5a. Thus, the thickness of an external base layer 8b and a collector layer 11a of the polycrystalline Si layers 6c is thinned, and difference in level with the oxide films 2 can be reduced.
JP11952079A 1979-09-17 1979-09-17 Manufacture of semiconductor device Pending JPS5643754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11952079A JPS5643754A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11952079A JPS5643754A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5643754A true true JPS5643754A (en) 1981-04-22

Family

ID=14763300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11952079A Pending JPS5643754A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5643754A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6447071A (en) * 1987-08-18 1989-02-21 Nec Corp Semiconductor device and manufacture thereof
JPS6472561A (en) * 1987-09-02 1989-03-17 American Telephone & Telegraph Bipolar transistor
JPH0199372U (en) * 1987-12-23 1989-07-04
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body
US5434092A (en) * 1991-12-31 1995-07-18 Purdue Research Foundation Method for fabricating a triple self-aligned bipolar junction transistor
US5721147A (en) * 1995-09-29 1998-02-24 Samsung Electronics Co., Ltd. Methods of forming bipolar junction transistors
US5814538A (en) * 1996-03-19 1998-09-29 Samsung Electronics Co., Ltd. Methods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors therein
US5994196A (en) * 1997-04-01 1999-11-30 Samsung Electronics Co., Ltd. Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body
US4935375A (en) * 1985-12-20 1990-06-19 Licentia Patent-Verwaltungs-Gmbh Method of making a semiconductor device
JPS6447071A (en) * 1987-08-18 1989-02-21 Nec Corp Semiconductor device and manufacture thereof
JPH0620072B2 (en) * 1987-08-18 1994-03-16 日本電気株式会社 A method of manufacturing a semiconductor device
JPS6472561A (en) * 1987-09-02 1989-03-17 American Telephone & Telegraph Bipolar transistor
JPH0199372U (en) * 1987-12-23 1989-07-04
US5434092A (en) * 1991-12-31 1995-07-18 Purdue Research Foundation Method for fabricating a triple self-aligned bipolar junction transistor
US5721147A (en) * 1995-09-29 1998-02-24 Samsung Electronics Co., Ltd. Methods of forming bipolar junction transistors
US5814538A (en) * 1996-03-19 1998-09-29 Samsung Electronics Co., Ltd. Methods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors therein
US5994196A (en) * 1997-04-01 1999-11-30 Samsung Electronics Co., Ltd. Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques

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