JPS57210624A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57210624A
JPS57210624A JP1940381A JP1940381A JPS57210624A JP S57210624 A JPS57210624 A JP S57210624A JP 1940381 A JP1940381 A JP 1940381A JP 1940381 A JP1940381 A JP 1940381A JP S57210624 A JPS57210624 A JP S57210624A
Authority
JP
Japan
Prior art keywords
region
film
oxide film
dielectric thin
anneal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1940381A
Other languages
Japanese (ja)
Inventor
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1940381A priority Critical patent/JPS57210624A/en
Publication of JPS57210624A publication Critical patent/JPS57210624A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To anneal only a region where a dielectric thin-film is formed in a selective basis, by forming the dielectric thin-film selectively on the region desired to anneal for the prevention of reflection, and irradiating a laser light with proper power. CONSTITUTION:A field oxide film 1, a gate oxide film 2 and an exposed region 3 of single-crystal silicon are provided on a silicone substrate. A polycrystalline silicon layer 4 for wiring or gating is deposited thereupon, where an oxide film 5 is selectively formed in a part. The oxide film 5 becomes a reflection prevention as a dielectric thin-film, by irradiating a laser light wholly. The region 4a only can be made larger in grain size and a low-resistant region.
JP1940381A 1981-02-09 1981-02-09 Manufacture of semiconductor device Pending JPS57210624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1940381A JPS57210624A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1940381A JPS57210624A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57210624A true JPS57210624A (en) 1982-12-24

Family

ID=11998294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1940381A Pending JPS57210624A (en) 1981-02-09 1981-02-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57210624A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121923A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Manufacture of semiconductor device
JP2005175211A (en) * 2003-12-11 2005-06-30 Sharp Corp Process and equipment for producing semiconductor film
JP2006295097A (en) * 2004-06-04 2006-10-26 Advanced Lcd Technologies Development Center Co Ltd Crystallizing method, thin-film transistor manufacturing method, crystallized substrate, thin-film transistor, and display device
US7943936B2 (en) 2004-06-04 2011-05-17 Advanced Lcd Technologies Development Center Co., Ltd. Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150239A (en) * 1979-05-10 1980-11-22 Mitsubishi Electric Corp Heat treating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150239A (en) * 1979-05-10 1980-11-22 Mitsubishi Electric Corp Heat treating method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121923A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Manufacture of semiconductor device
JPH0410217B2 (en) * 1982-12-28 1992-02-24
JP2005175211A (en) * 2003-12-11 2005-06-30 Sharp Corp Process and equipment for producing semiconductor film
JP2006295097A (en) * 2004-06-04 2006-10-26 Advanced Lcd Technologies Development Center Co Ltd Crystallizing method, thin-film transistor manufacturing method, crystallized substrate, thin-film transistor, and display device
US7943936B2 (en) 2004-06-04 2011-05-17 Advanced Lcd Technologies Development Center Co., Ltd. Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device

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