JPS56118354A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56118354A
JPS56118354A JP2049780A JP2049780A JPS56118354A JP S56118354 A JPS56118354 A JP S56118354A JP 2049780 A JP2049780 A JP 2049780A JP 2049780 A JP2049780 A JP 2049780A JP S56118354 A JPS56118354 A JP S56118354A
Authority
JP
Japan
Prior art keywords
si3n4
opening
glass flow
film
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2049780A
Other languages
Japanese (ja)
Inventor
Shigeru Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2049780A priority Critical patent/JPS56118354A/en
Publication of JPS56118354A publication Critical patent/JPS56118354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a satisfactory glass flow effect at a relatively lower temperature, by forming an opening on an Si3N4 film after forming an opening on a PSG on an Si3N4 and removing a step by means of glass flow in H2O at the temperature of 900-1,000 deg.C. CONSTITUTION:A field oxidized film, a gate oxidized film, a polycrystalline Si gate and an n<+> layer are formed on a p type Si substrate 1, and an Si3N4 film 9 is applied thereon. After an opening is formed on a PSG7, the stepped part is removed by means of glass flow performed at the temperature of 900-1,000 deg.C and for the duration of about 30min. Then an opening is performed on the Si3N4 film 9 and an Al wiring 10 is applied. With such an arrangement, because the glass flow can be performed at a relatively lower temperature using water vapor, not only any undesirable effects to be caused by the increase in the depth of the diffusion layer can be prevented but also the possible breakdown of the Al wirings can be prevented by virtue of smoother surface of the PSG. Moreover, because of the intervention of the Si3N4, the P diffusion from the PSG can be prevented.
JP2049780A 1980-02-22 1980-02-22 Preparation of semiconductor device Pending JPS56118354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2049780A JPS56118354A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2049780A JPS56118354A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56118354A true JPS56118354A (en) 1981-09-17

Family

ID=12028790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2049780A Pending JPS56118354A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56118354A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262461A (en) * 1986-05-09 1987-11-14 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPH03173126A (en) * 1989-11-30 1991-07-26 Mitsubishi Electric Corp Semiconductor device of multilayer film structure and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262461A (en) * 1986-05-09 1987-11-14 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPH03173126A (en) * 1989-11-30 1991-07-26 Mitsubishi Electric Corp Semiconductor device of multilayer film structure and its manufacture

Similar Documents

Publication Publication Date Title
JPS5555559A (en) Method of fabricating semiconductor device
JPS56118354A (en) Preparation of semiconductor device
JPS53135263A (en) Production of semiconductor device
JPS5378183A (en) Manufacture of semiconductor device
JPS54139493A (en) Manufacture of semiconductor device containing poly-crystal silicon layer
JPS5459090A (en) Semiconductor device and its manufacture
JPS57155764A (en) Manufacture of semiconductor device
JPS57133646A (en) Semiconductor integrated circuit device and manufacture thereof
JPS57141966A (en) Manufacture of semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS551157A (en) Method of fabricating semiconductor device
JPS5529121A (en) Manufacture of semiconductor device
JPS53144686A (en) Production of semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS54162982A (en) Manufacture of semiconductor device
JPS5544701A (en) Manufacturing transistor
JPS54103672A (en) Production of semiconductor device
JPS5485673A (en) Manufacture for semiconductor device
JPS57183025A (en) Semiconductor device
JPS5544741A (en) Manufacture of semiconductor device
JPS54156469A (en) Manufacture for integrated circuit device
JPS56148825A (en) Manufacture of semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS5379382A (en) Forming method of passivation film
JPS54133088A (en) Semiconductor device